无缝线路缓冲区病害分析及根治措施

概述了缓冲区养护中存在的问题,分析了无缝线路缓冲区病害的成因,提出了治理病害的针对性措施.     

2003版建筑给排水规范学习与设计体会

就新规范中住宅给水管管径、引入管阀门设置、水箱进水管和溢水管设置、水箱水位控制、通气管系统设计及地漏的设置等方面谈了作者学习《建筑给水排水设计规范》(GB50015-2003)的体会。     

古籍管理人员健康保障研究

古籍书库中的空气污染和生物污染给古籍管理人员的健康造成危害,对古籍书库存在的各种危害进行了分析,并提出了预防措施。     

单片机－CRT接口板设计

详细阐述了单片机－ＣＲＴ接口板的设计原理，增强了单片机的显示手段，拓宽了单片机在生产过程监测系统中的应用。     

一种使用非线性循环数列解决堆栈问题的算法

提出了一种使用非线性循环数列解决堆栈问题的算法,对研究栈的性质和求解栈的输出序列具有一定的实用价值。     

Electrophysiological research of synapse formation from beginning to maturity

The development of synapses is an important question in neurobiology. We employ patchclamp technique to record MEPCs and EPCs of myoballs inXenopus cell culture. The rate of EPC/MEPC is related with synapses maturation. Accordingly, we define the mature synapses as those whose rate of presynaptic membrane ’ s EPC to MEPC is more than 8. The process of maturation needs about 2–5 h after neuntes contact with myoballs. We divide the development of synapses into three stages: young, developing and mature. The neurotransmitters stack gradually and increase by hundreds of times along with young synapses growing into maturity. So the process of synapses maturation should include presynaptic membrane specialization, postsynaptic membrane specialization and neurotransmitters stack.     

HYDC数据压缩器

描述了采用代换式压缩法,设计一个高效率的数据压缩器ＨＹＤＣ的过程,并给出一个在实际应用中的例子。     

用叠加谱比法研究四川地区Lg尾波Q值的区域性变化

 运用单台叠加谱比法,分析了成都台网4个台站的29个地震记录的垂直分量,反演得出与各射线路径相对应的Lg尾波的Q₀值.结果表明:Q₀值的分布特征与构造活动性密切相关.在构造活动剧烈的龙门山断裂、鲜水河断裂和安宁河断裂,尤其是在这三大断裂的交汇处,Q₀值呈现出相当低的值,约在150～210的范围内.在四川盆地的大部分地区,随着构造活动的减弱,Q₀值有所抬升,约为240～270.在四川盆地的东部,Q₀值可达300.在离开断裂区的四川北部,Q₀值在250～300的范围内变化.     

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.     

缓冲器在高层楼供水系统中减振降噪应用研究

将缓冲器应用于高楼供水系统进行减振降噪,完成了理论计算和实验研究,应用结果表明:合理设计和安装缓冲器能够减少管路振动,降低噪声。