烷氧基偶氮苯化合物的合成、表征及光响应性能

以间苯二甲酸为原料,经多步反应合成了1种新型烷氧基偶氮苯化合物5-[4-(十六烷氧基)苯基偶氮]-1,3-笨二甲酸二乙醋.用FT-IR,UV-vis、1 H NMR对其结构进行了表征.该化合物(3.24×10-5 mol·L-1四氢呋喃溶液)紫外光谱K带的最大吸收波长为353 nm,摩尔吸光系数ε为23 950 L·mol-1·cm-1.在365 nm紫外光照射下,该化合物发生反-顺异构化,光照8 min后达到光稳态,K带最大吸收波长蓝移至311 nm,将其置于暗室中,40 h后恢复到光照前状态.光稳态时偶氮发色团反-顺异构化转化效率R为86.19%,顺式异构体的比例Y为90.5%.     

Photoresponse and carrier transport of protocrystalline silicon multilayer films

Alternating multilayer films of hydrogen diluted hydrogenated protocrystalline silicon (pc-Si:H) were prepared using a plasma-enhanced chemical vapor deposition technique.The microstructure of the deposited films and photoresponse characteristics of their Schottky diode structures were investigated by Raman scattering spectroscopy,Fourier transform infrared spectroscopy and photocurrent spectra.Microstructure and optical absorption analyses suggest that the prepared films were pc-Si:H multilayer films with a two-phase structure of silicon nanocrystals (NCs) and its amorphous counterpart and the band gap of the films showed a decreasing trend with increasing crystalline fraction.Photocurrent measurement revealed that silicon NCs facilitate the spatial separation of photo-generated carriers,effectively reduce the non-radiative recombination rate,and induce a photoresponse peak value shift towards the short-wavelength side with increasing crystallinity.However,the carrier traps near the surface defects of silicon NCs and their spatial carrier confinement result in a significant reduction of the diode photoresponse in the longwavelength region.An enhancement of the photoresponse from 350 to 1000 nm was observed when applying an increased bias voltage in the diode,showing a favorable carrier transport and an effective collection of photo-generated carriers was achieved.Both the spatial separation of the restricted electron-hole pairs in silicon NCs and the de-trapping of the carriers at their interface defects are responsible for the red-shift in photoresponse spectra and enhancement of external quantum efficiency.The results provide fundamental data for the carrier transport control of high-efficiency pc-Si:H solar cells.     

本征晶格缺陷对BNT铁电薄膜光响应性能的影响简

用溶胶-凝胶法在YSZ/Si衬底上制备Bi3．15 Nd0．85 Ti3 O12（BNT）铁电薄膜,研究了退火气氛和退火温度对BNT薄膜的光响应性能的影响。对不同退火气氛和退火温度下的BNT薄膜进行微观结构和光响应性能表征。研究结果表明：随着退火气氛中氧含量的降低,光响应增大,BNT薄膜中氧空位起到了为光生载流子传输提供通道的作用;随着退火温度的降低,光开启电压和饱和光电导增大,BNT薄膜中高密度的晶界虽然阻碍了光生载流子的迁移,却有利于使光生载流子在晶界处及时分开。     

铜阳极膜导电性转型起因探讨

对在不同酸碱度和添加剂的电解液中,铜电极氧化膜呈现与块体铜氧化物不同的ｎ型半导体性质的实验结果进行了综合分析,指出铜阳极膜导电性转型应归因于隙间铜离子在膜中向溶液方向的迁移并形成浓度梯度,使邻近基底的氧化物层转呈ｎ型导电,并在可吸收到足够强度和能量的照射光时呈现阳极光电流响应。     

Decrease of K+ conductance underlying a depolarizing photoresponse of a molluscan extraocular photoreceptor

Summary An identified neurone in theOnchidium abdominal ganglion responds to light with a depolarizing generator potential, so that this neurone functions as an extraocular photoreceptor. The light-evoked depolarizing response is produced by a selective decrease in K⁺ conductance.     

含偶氮苯和1,3,4-噁二唑基团化合物的合成及光响应性能

以间苯二甲酸为原料,经过多步合成了1种含偶氮苯和1,3,4-噁二唑基团化合物5-[4-(十六烷氧基)苯基偶氮-]1,3-苯基-二-(1,3,4-噁二唑硫基)乙酸甲酯(8),利用IR、UV-vis、1 H NMR对其结构进行表征.该化合物四氢呋喃溶液紫外光谱中,偶氮苯结构K带的最大吸收波长为360nm,摩尔吸光系数ε为27 476L.mol-1.cm-1.在365nm紫外光照射下,偶氮苯基团发生反-顺异构化,照射5min后达到光稳态,光稳态时偶氮苯基团光致反顺异构化速率常数kp为1.338 9min-1,反式异构体转化效率R为80.95%,顺式异构体比例Y为84.99%,光稳态时偶氮苯K带最大吸收波长由360nm蓝移至326nm,将其置于暗室中,35h后恢复到光照前状态.     

Mg掺杂对GaN薄膜紫外光电导的影响

报道了用MOCVD方法制备的不同Mg掺杂浓度的GaN薄膜的紫外光电导特性.结果表明,没有进行Mg掺杂和弱掺杂的样品具有显著的光响应,而且光响应弛豫时间也较短,随着Mg掺杂浓度的增加,材料变成P型,光响应变小,且弛豫时间变长.     

基于光响应的林一草模式冠层郁闭度研究

模拟设计5个不同遮荫梯度,运用Li-6400便携带式光合测定仪从扁穗牛鞭草光响应生理的角度对林草模式植被恢复后冠层郁闭度大小控制进行了初步探索.结果表明:强度较大的60％和79％的遮荫下扁穗牛鞭草的最大净光合速率分别约为全光照的44.3％和42.5％,表观光合量子速率相对较小,对低光照不敏感,不适应此遮荫环境;遮荫16...     

石墨烯场效应晶体管的光响应特性研究

采用电子束曝光和剥离工艺制备石墨烯场效应晶体管, 并研究其光电响应特性。结果表明, 当激光光斑(波长为633 nm)照射在金属电极边缘的石墨烯沟道时, 可测得明显的光电流。背栅电压能够有效调制光电响应, 可以改变光电流的大小和方向。在背栅调控下, 光电流出现饱和现象, 石墨烯晶体管的光响应度最大达到46.5 μA /W,可用于构建基于石墨烯的新型光探测器。