电子束纳米分辨率光刻

本文侧重分析电子束纳米光刻中的若干限制因素，包括电子光学系统中的象差、电子束与抗蚀剂的相互作用（散射与二次电子效应）、衬底条件等，并对已用于进行纳米分辨率电子束光刻中的一些方法进行了归纳，讨论了其应用前景．     

Mechanism and development of dip-pen nanolithography （DPN）

Dip-pen nanolithography is a new scanning probe lithography （SPL） technique based on atomic force microscopy （AFM） , and now has made a great progress. The process of dip-pen lithography involves the adsorption of ink molecules on AFM tip, the formation of water meniscus, the transport of ink molecules, and diffusion of ink molecules on the substrate. More factors such as temperature, humidity, tip, scanning speed and so on will influence the process of dip-pen lithography. The paper analyzes in detail the mechanism of this technique, introduces synthetically the latest development, including electrochemical DPN, more-mode DPN, multiple DPN, multi-probe array DPN and so on. Finally, the paper describes the characteristics and the application of DPN.     

Research on the atomic force microscopy-based fabrication of nanochannels on silicon oxide surfaces

The atomic force microscopy (AFM)-based nanomachining of nanochannels on silicon oxide surfaces is investigated both theo-retically and experimentally. The relationships of nanochannel depth versus cutting velocity, nanochannel depth versus normal force, friction force versus cutting velocity, and friction force versus normal force are systematically studied. Using the derived theory and fabrication method, a nanochannel with an expected depth can be machined simply by controlling the vertical deflection signal on the position sensitive detector of AFM. The theoretical analysis and fabrication method can be effectively used for AFM-based fabrication of nanochannels.     

纳米光刻技术现状与进展

随着纳米加工技术的发展，纳米结构器件必将成为未来集成电路的基础。纳米光刻技术是制作纳米结构的基础，具有重要的应用前景。文章介绍了几种极有潜力的下一代纳米光刻技术，包括极紫外光刻技术、电子束光刻技术、纳米压印光刻技术的新途径、发展现状和关键问题，最后讨论了纳米光刻技术的应用前景。