一种新型双层PBG结构带阻滤波器

本文介绍了一种双层结构的基于村底打孔的PBG结构带阻滤波器，采用了周期结构与微带电路分离的设计。解决了传统的打孔结构的导带加工问题，并且有利于电路的加工和修改。最后给出了利用HFSS理论仿真和实际测量的结果，论证了这种结构的可行性     

高速电路中电源/地平面间同步开关噪声的抑制研究

提出一种将介质型电磁带隙结构与电源平面分割技术相结合,用于抑制高速电路电源/地平面间同步开关噪声的新方法.利用Ansoft HFSS建立相应三维电磁仿真模型并对其进行数值仿真,结果表明:若以-40 dB为噪声隔离标准,噪声可在0.01～0.66 GHz与0.91～4.11 GHz范围内得到有效抑制,并且噪声最大抑制深度...     

PBG光子晶体光纤中空气导光条件的研究

应用平面波法分析了带隙效应导引光子晶体光纤(Photonicbandgapguidingfibers,PBG PCFs)中实现空气通道导光必须满足的条件,计算机仿真了蜂窝和三角形两种不同结构的PBG PCFs的空气导光性能。计算结果表明,要实现空气导光,空气孔直径与周期的比值d/Λ必须大于某一特定值:对于蜂窝结构该比值为0.84,而对于三角形结构该比值为0.59;在特定的d/Λ下,空气导光的波长范围随Λ可变。     

一种Brokaw带隙电压基准的分析与设计

目的在分析运算放大器对带隙基准影响的基础上,分析并设计一种Brokaw(2.5V,13.3×10-6/℃)的带隙电压基准。方法以Brokaw带隙基准电压源结构为基础来进行设计。结果经过上华0.6μm Bicmos工艺的仿真,在温度-40℃到 85℃的变化范围内,基准电压变化范围为2.5±0.001V。其温度系数为13.3×10-6/℃。结论电路完成了一阶温度补偿,温度漂移较小。     

窄能隙导电高分子设计、合成新进展

详细介绍国内外在一类新型导电高分子材料 (CPs)—窄能隙导电高分子材料主要研究成果 ,这一领域正成为掺杂导电材料的有力挑战 ,为有机金属的研究提供了理论依据和新的发展方向     

Effect of Co substitution on the structural,dielectric and optical properties of KBiFe2O5

Cobalt (Co)-modified brownmillerite KBiFe2O5 (KBFO; [KBiFe2(1?x)Co2xO5 (x = 0, 0.05)]) polycrystalline is synthesized following the solid-state reaction route. Rietveld refinement of X-ray diffraction data confirmed the phase purity of KBFO and KBiFe1.9Co0.1O5 (KBFCO). The optical bandgap energy (Eg) of KBFO decreased from 1.59 to 1.51 eV because of Co substitution. The decrease in bandgap can be attributed to the tilting of the Fe–O tetrahedral structure of KBFCO. The observed room-temperature Raman peaks of KBFCO shifted by 3 cm?1 toward a lower wavenumber than that of KBFO. The shift in Raman active modes can be attributed to the change in the bond angles and bond lengths of the Fe–O tetrahedral structure and modification in response to oxygen deficiency in KBFO because of Co doping. Compared with that of KBFO, the frequency-dependent dielectric constant and dielectric loss of KBFCO decrease at room temperature, which is a con-sequence of the reduction in oxygen migration and modification in response to vibrational modes present in the sample.     

2014年诺贝尔物理学奖解读

 本文从半导体科学技术研究与诺贝尔物理学奖的渊源出发,详细解读了2014 年诺贝尔物理学奖成果"高效GaN 基蓝光发光二极管"的研究背景、核心创新内容、科学意义和应用价值,分析了氮化物宽禁带半导体的发展趋势。文章从3 位诺贝尔物理学奖获得者的研究历程、诺贝尔评奖委员会的评奖标准等视角,探讨了2014 年的诺贝尔物理学奖对我国物理学科建设、如何看待应用物理研究与基础物理研究的关系以及对成果评价标准的启示和借鉴价值等问题。     

一种高电源抑制比的CMOS带隙基准电压源

设计了一种采用前调整器的高电源抑制比的CMOS带隙基准电压源.基于CSMC 0.5 μm标准CMOS工艺,分别对有前调整器与没有前调整器的CMOS带隙基准电压源进行了设计与仿真验证.仿真结果显示,采用前调整器的带隙基准在100 Hz、1 kHz、100 kHz处分别获得了-117.3 dB、-106.2 dB、-66.2 dB的高电源抑制比,而没有采用前调整器的CMOS带隙基准在100 Hz、1 kHz、100 kHz处仅分别获得了-81.8、-80.1、-44.9 dB的电源抑制比;在-15 ～90℃范围内,采用前调整器的带隙基准的温度系数为6.39 ppm/℃;当电源电压在2.2 ～8 V变化时,采用调整器的带隙基准的输出电压变化仅9.73μV.     

掺杂一维光子晶体透射谱研究

用传输矩阵法计算模拟掺杂（含缺陷）一维光子晶体模型（ABCnAB）m的透射谱,当n=1,（ABCAB）。的透射谱出现了有规律的共振透射带,具有宽带滤波的特性,当m=10时,（ABCAB）10随缺陷层C的折射率以的变化,禁带中心频率处（1．0ω／ω0）出现了一个带宽由大变小变化的透射带,且每个透射带又分裂为恒定透射率的多个透射峰;当m=10,n为奇数时,模型（ABCnAB）10的透射谱出现奇数个透射带,n为偶数时,出现偶数个透射带,且每个透射带均分裂为9个透射峰。这些特性可用于设计可调性多通道滤波器等。     

Graded bandgap semiconductor thin film photoelectrodes

A graded bandgap oxide semiconductor thin film electrode was designed in order to obtain a photoelec-trochemically stable photoelectrode, with wide absorption range. The graded bandgap Ti_1−x V _x O₂ film electrode was prepared by heating the stacked layers of V/Ti in varying ratios, which were coated on the substrate by the sol-gel method using the starting solution with various V/Ti ratios. XPS result showed that the composition gradient was achieved for the film. The Ti_1−x V _x O₂ film electrode was found to be photoelectrochemically stable. Its photovoltage was about 360 mV. Obvious visible light photoresponse was observed for the Ti_1−x V _x O₂ film electrode. Compared with the pure TiO₂ electrode, the photocurrent onset potential of the Ti_1−x V _x O₂ film electrode was shifted positively, probably because the accumulation of vanadium at the electrode surface causes the recombination of the electrons and holes, and the lowest level of the conduction band of Ti_1−x V _x O₂ is lower than that of TiO₂. Impedance analysis showed that the donor density of the Ti_1−x V₂O₂ film electrode was higher than that of TiO₂ film electrode.