用壳聚糖重量法测定硅酸盐中的二氧化硅

采用壳聚糖为凝聚剂，重量法测定二氧化硅，试验了凝聚剂用量，溶液酸度、蒸发体积．放置时间及温度等对硅酸凝聚的影响，得出了最佳的沉淀条件，并测定了标准样品，测定结果的偏差较小．     

硅表面双聚体空位附近原子沉积的理论研究

采用经验紧束缚近似方法模拟重构硅(100)表面单个双聚体空位(SDV)附近的单个硅原子的沉积行为，根据绘制的SDV附近附加能量差异的三维及投影图，确定了沉积束缚点和一些鞍点，并研究其可能的扩散路径。     

激光收发器件硅基平台封装设计与工艺实现

分析了光电子器件对V型槽刻蚀工艺精度的要求,计算了激光二级管(LD)与光纤直接耦合时所容许的对准容差,给出了无源对准封装工艺对设备和工艺控制精度的要求,并采用贴片精度达±1μm的自动贴片倒装焊工艺和硅V型槽定位技术开发了一种激光收发器件模块.初步的封装试验和测试证明了硅基平台无源对准封装工艺的可行性和可靠性.     

单片机在可控硅控制系统中的应用

本文对可控硅触发电路提出了一种新的设计方法,即采用单片机的一个定时器,三位输出口,外加同步信号检测器和触发信号的驱动电路,构成一个简单实用的三相可控硅触发器,触发角的大小由外部控制信号决定,触发脉冲的宽度由软件参数控制。从而完成可靠、准确地触发。     

玻璃与硅片场致扩散连接过程中的电流特性与断口分析

对K4 玻璃与硅片在大气中进行了场致扩散焊 (阳极焊 )焊接试验。结果表明 ,K4 玻璃与硅片在焊接温度为 30 0～ 4 5 0℃和焊接电压为 70 0～ 85 0V的范围内都能够实现较好的连接。试验还表明 ,阳极焊过程中的电流随时间的延长而降低并渐趋稳定、随焊接温度和焊接电压的降低而减小。利用扫描电镜和能谱分析等手段对拉伸断口及接头组织和成分进行了分析。     

杂多蓝光度法快速测定碳素钢中硅、磷

在室温、一定的酸度等条件下，分别采用二元硅钼蓝光度法、三元饿磷钼蓝光度法测定碳素钢中硅、磷，加快了显色反应速度，本方法操作简单、显色物稳定性强，测定准确率高。     

激光照射硅钢片降低铁损的实验研究

采用JG -2A激光器对35Z145硅钢材料进行照射实验 ,阐述了激光照射能提高硅钢晶粒取向 ,降低铁损的技术。     

Direct determination of trace silicon in lanthanum oxide by using a selective volatility and slurry sampling-FETV-ICP-AES

A new method for determination of trace sillicon in high purity lanthanum oxide by using electrothermal vaporization (ETV)-ICP-AES with polytetrafluoroethylene (PTFE) slurry as a fluorinating reagent has been proposed. Under the optimized experimental conditions, the fluorination reactions of analyte (Si) and matrix(La) with PTFE in the graphite furnace took place at high temperature, and the fractional volatilily between Si and La was observed. Based on this principle the matrix interference could be eliminated. The detection limit of Si was 4.0μg·L⁻¹, and the RSD was 3.4%(C=0.2mg·L⁻¹,n=10). The procedure proposed has been applied successfully to determine trace Si in La₂O₃ without any chemical pre-treatment. Supported by the National Natural Science Foundation of China Qin Yongchao: born in Dec. 1953, ph. D., Assciate Professor     

H2 sensing properties of modified silicon nanowires

It has been found that the silicon nanowires modified with noble metals can be used to fabricate an effective H2 gas sensor in the present study.The preparation and surface modification of silicon nanowires(Si NWs) were carried out by chemical methods. The morphology of the silicon nanowires unmodified and modified with nanoparticles of platinum, palladium, silver and gold was investigated using scanning electron microscopy(SEM). The chemical composition of the silicon nanowire layers was studied by secondary ion mass spectroscopy(SIMS) and energy dispersive X-ray analysis(EDX). The structures of type metal/Si NWs/p-Si/Al were fabricated. The electrical characterization(I–V) was performed in primary vacuum and H2 at different concentrations. It was found that the metal type used to modify the Si NWs strongly influenced the I–V characteristics. The response of these structures toward H2 gas was studied as a function of the metal type. Finally, the sensing characteristics and performance of the sensors were investigated.     

一种硅原子簇边界处理方法

近年来,用量子化学—原子簇方法研究固体的电子性质,例对固体表面、体内杂质和缺陷、无序体系的电子结构等的研究越来越引起人们的重视。原子簇模型的基本思想是以有限大的原子团模拟无限大的体系。共价固体硅原子簇边界悬挂键的处理,对计算结果影响很大。边界饱和原子的选取,是原子簇方法中一个十分重要的问题。Tong曾用氢原子饱和边界,发现所计算的电子态密度结果中禁带较宽;张开