0.18μm RF-CMOS器件交流小信号模型的研究

以BSIM 4为基本的内核,针对5 GHz左右的宽带无线通信中的RFIC设计为目标,提出了在这个工作频段专用的深亚微米(0.18μm)RF-CMOS的交流小信号模型。通过对模型的验证,模型仿真值与实测值比较吻合,说明本文得出的交流小信号模型是准确的。由于本模型在收敛性和计算速度间折衷,具有很强的工程意义。     

Analytical Frequency-Dependent Model for Transmission Lines on RF-CMOS Lossy Substrates

Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, lossy substrates based on confor- mal mapping, and region subdivision. Tests show that the line parameters (per unit length) obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.