微光学元件芯模的光刻工艺研究

光刻法作为微光学元件的主要生产工艺,如何提高光刻加工工艺已经成为一个日益紧迫的问题,本文使用北京化学试剂研究所生产的BP-215系列紫外正型光刻胶,以分辨率板直接作为参考对象来判别光刻工艺的分辨率,并且在优化各控制变量的前提下,得出最佳工艺参数并对噪声进行分析。     

Single-componentchemicallyamplifiedi-linemolecularglassphotoresistbased on calix[4]resorcinarenes

Calix[4]resorcinarene, prepared by the acid- catalyzed condensation of resorcinol and paraldehyde, was used as the core of the molecular glass compound. The hydroxyl groups of calix[4]resorcinarene were partly pro- tected by tert-butoxycarbonyl （t-BOC） and then esterified with 2-diazo-l-naphthoquinone-4-sulfonyl chloride （2,1,4- DNQ-C1）. Upon irradiation to 365 nm light, the 2,1,4-DNQ groups undergo photolysis to generate a small quantity of sulfonic acid other than indene carboxylic acid. The gen- erated sulfonic acid can further catalyze the deprotection of the t-BOC group. So, a new type of single-component chemically amplified i-line positive photoresist can be formed by the molecular glass compounds. The litho- graphic performance of the resist was evaluated with high resolution and photosensitivity with an i-line stepper.     

亚微米级坡莫合金栅格研制

本文提出用激光干涉法制作亚微米级坡莫合金耦合栅格掩模,然后用FeCl_3溶液、等离子体两种刻蚀方法得到坡莫合金耦合栅格。文中对两种刻蚀方法进行了比较,讨论了得到高质量图形的工艺条件。     

EUV光刻技术进展

极紫外光刻(Extreme Ultraviolet Lithography),是以波长为10-14纳米的极紫外光作为光源,EUV技术最明显的特点是曝光波长一下子降到13.5nm,它能够把光刻技术扩展到32nm以下的特征尺寸。本文介绍了EUV的光刻原理和EUV光源的选择,以及EUV对掩膜版和光刻胶的技术要求,以及EUV的发展趋势。