电场调制下聚合物光波导的放大自发辐射

报道了电场调制下的MEH-PPV光波导放大的自发辐射。我们设计制备结构为ITO／SiO2/MEH-PPV／SiO2／A1多层光波导。在脉冲激光激发下,MEH-PPV薄膜产生窄光谱的放大自发辐射。在器件的ITO和A1两极间加上同步电脉冲,随着脉冲电压的增加,电场诱导的激子离化增强,导致放大的自发辐射强度大幅度降低。这种机制可以用于增益可调聚合物光波导放大器和光开关。     

热处理对MEH-PPV薄膜微力学行为的影响

利用纳米压痕技术研究了热处理对聚(2-甲氧基-5-(2’-乙基己基氧)-1-4-苯撑乙烯)(MEH-PPV)薄膜力学性能的影响,结果表明:随着热处理温度的提高,最大压痕深度先减小后增加,弹性模量、硬度随着热处理温度的提高而降低;另外,MEH-PPV薄膜对负载率的敏感性随热处理温度的提高而降低;同时利用高斯网络模型分析了热处理对MEH-PPV薄膜力学性能影响的原因,拓扑缠结对MEH-PPV薄膜力学性能影响是主要的,而凝聚缠结对MEH-PPV薄膜力学性能影响是次要的。     

Photovoltaic properties of MEH-PPV/TiO_2 nanocomposites

Photovoltaic properties of photodiodes based on nano-TiO_2 and poly[2-methoxy,5-(2′-ethlhexyloxy)- p-phenylenevinylene] (MEH-PPV) composites are investigated. By comparing composite devices with the same weight of TiO_2 (nanoparticles and nanotubes):MEH-PPV, it was found that the device with TiO_2 nanotubes exhibited better performance. By further optimizing the weight radio of TiO_2 nano- tubes:MEH-PPV, we gained the device with a short circuit current density of 9.27 μA/cm2 with a light intensity of 16.7 mW/cm2 at the 500 nm wavelength, the highest open-circuit voltage of 1.1 V, and a photosensitivity of 332 at reverse bias of -0.6 V. The photosensitivity is improved by a factor of 33 compared with the undoped MEH-PPV device.     

利用表面光电压谱研究MEH-PPV定域跃迁

利用外场调制的表面光电压谱研究聚合物材料MEH-PPV的定域跃迁（350 ~420 nm）与非定域跃迁（420~600 nm）. 实验证明, 定域跃迁是由于电子从价带向导带中定域态能级跃迁的结果.     

Comparison of photovoltaic devices based on MEH-PPV with various molecular weights

Theneedforefficient,inexpensiveandrenewableenergysourcesisstimulatingnewapproachestothepro-ductionoflow-costphotovoltaicdevices.Althoughinor-ganicsemiconductorsaretheprimaryproductions,highfabricationcostsmakeinorganicsolarcelldifficulttomeetlarge-scaleapplicationsduetoitscomplicatedtech-nology,highcostandrigormaterialprocessing.Thesolarcellsbasedonorganicmolecule[1]andconjugatedpoly-mer[2—6]havealreadywelldeveloped.Conjugatedpolymerphotovoltaicdeviceshaveattractedagreatdealofatten-tionduetot…     

体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件

分别以p型体硅和p型薄膜微晶硅为阳极, 以掺入MEH-PPV的PFO为发光层, 以透明金属Sm/Au为阴极, 制作了顶发光白光器件。器件结构是: 硅阳极/PEDOT:PSS/MEH-PPV:PFO/Cs₂CO₃/Sm/Au。通过调节MEH-PPV在PFO中的质量百分比, 改进了白光器件的发射色度。当MEH-PPV的质量百分比为0.13%时, 发光在白光范围, CIE色坐标为(0.372, 0.391)。研究了器件发光效率对体硅阳极电阻率的影响, 当体硅阳极电阻率为0.079 Ω•cm时, 器件电流效率和功率效率都达到极大, 分别是0.191 cd/A和0.131 lm/W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极, 通过调节Ni层厚度, 优化器件效率。当Ni层厚度为2 nm时, 薄膜硅阳极器件的电流效率和功率效率分别达到最大值: 0.371 cd/A和0.187 lm/W, 相对于最佳电阻率体硅阳极器件分别提高了94%和43%。     

Photovoltaic properties of MEH-PPV/TiO2 nanocomposites

Photovoltaic properties of photodiodes based on nano-TiO2 and poly[2-methoxy,5-（2＇-ethlhexyloxy）-p-phenylenevinylene] （MEH-PPV） composites are investigated. By comparing composite devices with the same weight of TiO2 （nanoparticles and nanotubes）：MEH-PPV, it was found that the device with TiO2 nanotubes exhibited better performance. By further optimizing the weight radio of TiO2 nanotubes： MEH-PPV, we gained the device with a short circuit current density of 9.27μA/cm^2 with a light intensity of 16.7mW/cm^2 at the 500 nm wavelength, the highest open-circuit voltage of 1.1V, and a photosensitivity of 332 at reverse bias of -0.6V. The photosensitivity is improved by a factor of 33 compared with the undoped MEH-PPV device.