One-pot hydrothermal synthesis and fabrication of kesterite Cu2ZnSn(S,Se)4 thin films

Kesterite Cu_2Zn Sn(S,Se)_4(CZTSSe)powder was synthesized by a hydrothermal process.The thin films were fabricated by physical vapor deposition of CZTSSe powder followed by a thermal annealing process.The kesterite microstructure was identified by the X-ray diffraction and Raman spectroscopy.The morphology and elemental composition of CZTSSe thin films were also investigated.The dependence of resistance on the temperature of CZTSSe film was measured and the thermal activation energy of conductivity was estimated to be 0.33 eV based on Arrhenius plot of resistance versus temperature.A high absorption coefficient(10~4cm~(-1))of CZTSSe was found in the visible and NIR regions of the spectrum.A direct band gap structure with band gap energy of 1.46 eV was also estimated for CZTSSe films.The photoconductivity was measured under both AM 1.5G and NIR illumination and a stable and fully recoverable photoconductivity was observed for both asdeposited and annealed CZTSSe films.The annealed films show a higher photoconductivity than the as-deposited films under both AM 1.5G and NIR lights.     

无镉ZnO缓冲层的柔性CZTSSe太阳电池

针对铜锌锡硫硒（CZTSSe）薄膜太阳电池中CdS缓冲层带隙较小造成光损耗和Cd元素的毒性问题,提出无镉环保型CZTSSe太阳电池,分别采用溅射法和旋涂法来制备ZnO薄膜以替代CdS缓冲层.薄膜形貌表征及器件性能测试表明,相比旋涂法,溅射法制备的ZnO的薄膜质量及其CZTSSe器件性能明显更好,器件的光电转换效率（PCE）从1.0%提升到4.5%.同时,相比于CdS（E_g=2.4 eV）, ZnO具有更大的带隙（E_g=3.3 eV）,去除CdS膜层后,薄膜和器件在蓝光区具有更高的透光率和更好的光吸收.该设计为制备柔性CZTSSe太阳电池提供了一种新策略.     

MoO3背界面修饰对柔性CZTSSe太阳能电池性能的影响

针对高温硒化过程中铜锌锡硫硒（CZTSSe）太阳能电池背界面不稳定问题，提出在柔性Mo衬底上蒸镀MoO₃薄层，阻隔CZTSSe吸收层与Mo的直接接触，抑制背界面处CZTSSe吸收层与Mo发生分解反应.材料表征及性能测试表明，MoO₃修饰能促进背界面处CZTSSe吸收层的生长，提高CZTSSe吸收层的结晶质量，实现了CZTSSe吸收层由双层结构向“三明治”结构的转变.实验证明，加入10 nm的MoO₃薄层，开路电压与短路电流有大幅提升，能得到最佳的器件效率，效率从6.62%提升到7.41%.     

溶液法制备Zn1-xSnxO缓冲层的CZTSSe太阳电池性能优化

为了获得环保型太阳电池，利用低成本且安全的溶液法制备Zn_1-xSn_xO（ZTO）,替代CdS缓冲层以获得无镉柔性Cu₂ZnSn（S, Se）₄（CZTSSe）太阳电池.通过优化ZTO层厚度以调控电场和耗尽区，当ZTO层厚度为100 nm时，器件的内建电势可提升至0.35 V,耗尽区宽度增加至0.23μm,能更有效地收集载流子.优化后的器件具有更好的理想因子A（1.60）和更短的电荷转移寿命（26μs）,这表明异质结质量得到提高且界面复合被有效抑制.最佳器件的光电转换效率（PCE）为3.0%,填充因子获得了22.7%的显著提升.