平面型无参比电极二氧化硫传感器

制备了一种新型无参比电极由ＮＡＳＩＣＯＮ和ＹＳＺ两种固体电解质及Ｎａ２ＳＯ４辅助电极构成的二氧化硫传感器。实验结果表明,该传感器对二氧化硫产生Ｎｅｒｎｓｔ响应。由于这种传感器采用了平面结构,对比电极和工作电极处于同样气氛中,消除了氧的影响和密封问题,同时有利于传感器的微型化和多元复合。     

掺纳米Al2O3的纳米8YSZ相变及电导率

掺8mol%Y2O3的纳米ZrO2粉体中加入0－5wt%纳米Al2O3，在1100℃、1200℃、1300℃不同温度下烧结2h，烧结样品在烧结温度达1200℃以上，掺1wt%以上的纳米Al2O3的四方相完全转变为立方相。初步探讨掺纳米Al2O3的8YSZ陶瓷烧结体相变机理及纳米Al2O3对8YSZ烧结体的晶参数和电导率影响。     

Improving thermal insulation of TC4 using YSZ-based coating and SiO2 aerogel

In this paper, air plasmas spray(APS) was used to prepare YSZ and Sc2O3–YSZ(Sc YSZ) coating in order to improve the thermal insulation ability of TC4 alloy. Si O2 aerogel was also synthesized and affixed on TC4 titanium alloy to inhabit thermal flow. The microstructures, phase compositions and thermal insulation performance of three coatings were analyzed in detail. The results of thermal diffusivity test by a laser flash method showed that the thermal diffusivities of YSZ, Sc2O3–YSZ and Si O2 aerogel are 0.553, 0.539 and 0.2097 10 6m2/s, respectively. Then,the thermal insulation performances of three kinds of coating were investigated from 20 1C to 400 1C using high infrared radiation heat flux technology. The experimental results indicated that the corresponding temperature difference between the top TC4 alloy(400 1C) and the bottom surface of YSZ is 41.5 1C for 0.6 mm thickness coating. For 1 mm thickness coating, the corresponding temperature difference between the top TC4 alloys(400 1C) and the bottom surface of YSZ, Sc YSZ, Si O2 aerogel three specimens is 54, 54.6 and 208 1C, respectively. The coating thickness and species were found to influence the heat insulation ability. In these materials, YSZ and Sc YSZ exhibited a little difference for heat insulation behavior. However, Si O2 aerogel was the best one among them and it can be taken as protection material on TC4 alloys. In outer space,Si O2 aerogel can meet the need of thermal insulation of TC4 of high-speed aircraft.     

Room-temperature deposition of yttria-stabilized zirconia buffer layer on metallic substrates by laser ablation

Conclusion We investigated the deposition of YSZ buffer layers on polycrystalline metallic substrate at low temperature and low oxygen pressure. The (100) preferred orientation can be obtained in the YSZ films and was explained by the model of growth-based orientation selection. Optimizations of oxygen partial pressure and target distance were done to offer referable values for IBAD process.     

YSZ薄膜的阻抗谱测量及其电学性能的研究

应用４１９２Ａ低频阻抗分析仪测量了不同温度下的ＹＳＺ薄膜的阻抗谱,利用Ｂａｕｅｒｌｅ等效电路模型研究了ＹＳＺ薄膜的电导率随温度的变化规律,探讨了掺杂氧化物（Ｙ２Ｏ３）对ＹＳＺ薄膜电导率的影响,其结果表明：ＹＳＺ薄膜的阻抗谱是一个完整的半圆,圆心稍低于实轴,在５００℃时,ＹＳＺ薄膜的电导率为０．０１４Ω＾－１ｃｍ＾－１,且随着测试温度的升高,ＹＳＺ薄膜的电导率增大,稳定剂浓度对ＹＳＺ薄膜的电导率有显     

MnO2对8YSZ低温活化烧结及其性能的影响

以MnO2为8YSZ的烧结助剂,研究MnO2含量和烧结工艺参数对8YSZ活化烧结及其性能的影响.采用阿基米德排水法、维氏显微硬度仪、电子万能试验机对烧结块体的致密度、硬度和抗弯强度进行分析,并使用扫描电子显微镜(SEM)、X线衍射分析(XRD)对其微观形貌和相组成进行表征.实验结果表明:块体的致密度随着MnO2含量的增加而逐渐增加,当MnO2添加量为3％时获得了最好的烧结效果;随着温度的升高,块体致密度也逐渐增加,在1300℃烧结4h时,致密度达到了98.59％:在此条件下,样品的硬度与抗弯强度均为最佳,分别为1830.21(HV)与235.46 MPa.     

纳米级钇稳定氧化锆的制备与电性能表征

以共沸蒸馏过程辅助的化学方法制备了纳米级的钇稳定氧化锆（YSZ）粉体,结果表明共沸蒸馏的方法有效地实现了沉淀的完全脱水,从而阻上了颗粒间的硬团聚,X射线衍射研究指出共沉淀物转变为方立相的最低温度为600度,X射线衍射谱和高分辨透射电镜照片均显示在600度下灼烧得到的粉体的粒径为6nm,而由BET比表面积测定计算所得到的粉体粒径则为11nm,从而确定团聚为软团聚,YSZ样片在1500度下烧结5h得到相对密度为94．8％的烧结体,以交流阻抗谱技术研究在空气和氩气气氛中材料的电导率,在9000度空气气氛下测得的电导率为056S.cm^-1,而在氩气气氛下可达到0067S.cm^-1显著高于用单纯共沉淀法制备的YSZ样片的电导率（0．009S.cm^-1)以用Plaster casting法制备的电导率（0.028S.cm^-1）,而电导活化能为0．88－0．89eV,较文献报导值低。     

高孔隙率YSZ多孔陶瓷管的湿法制备及性能表征

以钇稳定化氧化锆 (YSZ)为骨料 ,优选出玉米粉为成孔剂 ,阿拉伯树胶为分散剂和粘结剂 ,采用注浆法制备出孔隙率为 49.0 %～ 6 4.1%的 YSZ多孔陶瓷管 .结果表明 ,以玉米粉为成孔剂 ,可制备出孔隙率较高、孔径分布均匀的 YSZ多孔陶瓷管 .升温速度对 YSZ多孔陶瓷管的性能有着重要影响 .在 2 2 0～ 440℃的温度范围内 ,阿拉伯树胶和玉米粉明显分解 ,并分别在 5 2 0℃后被完全烧尽 ,因此在此温度范围内升温速度不宜过快 .本文还提供一种用激光技术检测多孔陶瓷管孔隙率的新方法     

有保护膜的Bi_2O_3基稀土固体电解质

用在掺有Ｙ￣（３＋），Ｇｄ￣（３＋）稀土离子的Ｂｉ＿２Ｏ＿３基电解质陶瓷样品表面镀氧化钇稳定的氧化锆膜，改善电解质的性能。制作了能在中温下工作的固体电解质燃料电池。     

溅射法制备的YSZ薄膜电性能

应用交流阻抗谱技术研究了用射频磁控溅射法在Ａｌ２Ｏ３ 基板上制备的ＹＳＺ薄膜电性能。结果表明,在清洁的基板上制备的ＹＳＺ薄膜经６００℃以上热处理后具有较高的电导率,完全可以作为固体电解质使用。