AlGaN/GaN heterostructure field transistor for label-free detection of DNA hybridization

This paper demonstrates electrical detection of single strand deoxyribonucleic acid (ssDNA) conjugation by AlGaN/GaN hetero-structure field effect transistor (HFET) biological sensors. The probe ssDNA molecules are modified by thiol groups. The immobilization of probe molecules is achieved by S-Au bonding on a thin layer of gold film in the sensing area. The immobilization and hybridization process are firstly implemented on Si surfaces and checked by fluorescent and atomic force microscopy (AFM) imaging. The hybridization process is monitored on AlGaN/GaN HFETs. Time-dependent current change is observed when a matched ssDNA solution is applied, while no response is observed for a mismatched ssDNA sequence. The DNA hybridization process is dominated by the conjugation between matched ssDNA sequences in the first few tens of seconds. After that, the hybridization process is dominated by mass transfer processes and saturation of the immobilized probe ssDNA molecules.     

静定混凝土梁在日照温度作用下应力的级数解

温度变化是混凝土梁的作用之一．在温度作用下，若混凝土中的温度变化是非均匀的，则虽然静定混凝土梁横戴面上的内力为零，但仍然会在结构中产生温度应力．本文采用弹性力学方法，视静定梁为平面应力问题，将应力函数取为三角级数，计算了静定梁在一般温度分布时的应力．然后取日照温度变化．T(x，y)＝Toe^-kty，确定了好定混凝土梁温度应力的级数解．