Antiferromagnetic order induced by an applied magnetic field in a high-temperature superconductor.

One view of the high-transition-temperature (high-Tc) copper oxide superconductors is that they are conventional superconductors where the pairing occurs between weakly interacting quasiparticles (corresponding to the electrons in ordinary metals), although the theory has to be pushed to its limit. An alternative view is that the electrons organize into collective textures (for example, charge and spin stripes) which cannot be 'mapped' onto the electrons in ordinary metals. Understanding the properties of the material would then need quantum field theories of objects such as textures and strings, rather than point-like electrons. In an external magnetic field, magnetic flux penetrates type II superconductors via vortices, each carrying one flux quantum. The vortices form lattices of resistive material embedded in the non-resistive superconductor, and can reveal the nature of the ground state-for example, a conventional metal or an ordered, striped phase-which would have appeared had superconductivity not intervened, and which provides the best starting point for a pairing theory. Here we report that for one high-Tc superconductor, the applied field that imposes the vortex lattice also induces 'striped' antiferromagnetic order. Ordinary quasiparticle models can account for neither the strength of the order nor the nearly field-independent antiferromagnetic transition temperature observed in our measurements.     

Resonance as a measure of pairing correlations in the high-Tc superconductor YBa2Cu3O6.6

One of the most striking properties of the high-transition-temperature (high-Tc) superconductors is that they are all derived from insulating antiferromagnetic parent compounds. The intimate relationship between magnetism and superconductivity in these copper oxide materials has intrigued researchers from the outset, because it does not exist in conventional superconductors. Evidence for this link comes from neutron-scattering experiments that show the unambiguous presence of short-range antiferromagnetic correlations (excitations) in the high-Tc superconductors. Even so, the role of such excitations in the pairing mechanism for superconductivity is still a subject of controversy. For YBa2Cu3O(6+x), where x controls the hole-doping level, the most prominent feature in the magnetic excitation spectrum is a sharp resonance (refs 6-11). Here we show that for underdoped YBa2Cu3O6.6, where x and Tc are below their optimal values, modest magnetic fields suppress the resonance significantly, much more so for fields approximately perpendicular to the CuO2 planes than for parallel fields. Our results indicate that the resonance measures pairing and phase coherence, suggesting that magnetism plays an important role in high-Tc superconductivity. The persistence of a field effect above Tc favours mechanisms in which the superconducting electron pairs are pre-formed in the normal state of underdoped copper oxide superconductors, awaiting transition to the superconducting state.     

Tunable quantum tunnelling of magnetic domain walls

Perhaps the most anticipated, yet experimentally elusive, macroscopic quantum phenomenon is spin tunnelling in a ferromagnet, which may be formulated in terms of domain wall tunnelling. One approach to identifying such a process is to focus on mesoscopic systems where the number of domain walls is finite and the motion of a single wall has measurable consequences. Research of this type includes magnetotransport measurements on thin ferromagnetic wires, and magnetization experiments on single particles, nanomagnet ensembles and rare-earth multilayers. A second method is to investigate macroscopic disordered ferromagnets, whose dynamics are dominated by domain wall motion, and search the associated relaxation-time distribution functions for the signature of quantum effects. But whereas the classical, thermal processes that operate in these experiments are easily regulated via temperature, the quantum processes have so far not been tunable, making difficult a definitive interpretation of the results in terms of tunnelling. Here we describe a disordered magnetic system for which it is possible to adjust the quantum tunnelling probabilities. For this material, we can model both the classical, thermally activated response at high temperatures and the athermal, tunnelling behaviour at low temperatures within a unified framework, where the domain wall is described as a particle with a fixed mass. We show that it is possible to tune the quantum tunnelling processes by adjusting the 'mass' of this particle with an external magnetic field.     

Doping a semiconductor to create an unconventional metal

Landau-Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been astonishingly successful. This is true despite the Coulomb interactions an electron experiences from the host crystal lattice, lattice defects and the other approximately 10(22) cm(-3) electrons. An important extension to the theory accounts for the behaviour of doped semiconductors. Because little in the vast literature on materials contradicts Fermi liquid theory and its extensions, exceptions have attracted great attention, and they include the high-temperature superconductors, silicon-based field-effect transistors that host two-dimensional metals, and certain rare-earth compounds at the threshold of magnetism. The origin of the non-Fermi liquid behaviour in all of these systems remains controversial. Here we report that an entirely different and exceedingly simple class of materials-doped small-bandgap semiconductors near a metal-insulator transition-can also display a non-Fermi liquid state. Remarkably, a modest magnetic field functions as a switch which restores the ordinary disordered Fermi liquid. Our data suggest that we have found a physical realization of the only mathematically rigorous route to a non-Fermi liquid, namely the 'undercompensated Kondo effect', where there are too few mobile electrons to compensate for the spins of unpaired electrons localized on impurity atoms.     

Magnetoresistance from quantum interference effects in ferromagnets

The desire to maximize the sensitivity of read/write heads (and thus the information density) of magnetic storage devices has stimulated interest in the discovery and design of new magnetic materials exhibiting magnetoresistance. Recent discoveries include the 'colossal' magnetoresistance in the manganites and the enhanced magnetoresistance in low-carrier-density ferromagnets. An important feature of these systems is that the electrons involved in electrical conduction are different from those responsible for the magnetism. The latter are localized and act as scattering sites for the mobile electrons, and it is the field tuning of the scattering strength that ultimately gives rise to the observed magnetoresistance. Here we argue that magnetoresistance can arise by a different mechanism in certain ferromagnets--quantum interference effects rather than simple scattering. The ferromagnets in question are disordered, low-carrier-density magnets where the same electrons are responsible for both the magnetic properties and electrical conduction. The resulting magnetoresistance is positive (that is, the resistance increases in response to an applied magnetic field) and only weakly temperature-dependent below the Curie point.     

Polarons and confinement of electronic motion to two dimensions in a layered manganite

A remarkable feature of layered transition--metal oxides-most famously, the high-temperature superconductors--is that they can display hugely anisotropic electrical and optical properties (for example, seeming to be insulating perpendicular to the layers and metallic within them), even when prepared as bulk three-dimensional single crystals. This is the phenomenon of 'confinement', a concept at odds with the conventional theory of solids, and recognized as due to magnetic and electron-lattice interactions within the layers that must be overcome at a substantial energy cost if electrons are to be transferred between layers. The associated energy gap, or 'pseudogap', is particularly obvious in experiments where charge is moved perpendicular to the planes, most notably scanning tunnelling microscopy and polarized infrared spectroscopy. Here, using the same experimental tools, we show that there is a second family of transition-metal oxides--the layered manganites La(2-2x)Sr(1+2x)Mn2O7--with even more extreme confinement and pseudogap effects. The data demonstrate quantitatively that because the charge carriers are attached to polarons (lattice- and spin-textures within the planes), it is as difficult to remove them from the planes through vacuum-tunnelling into a conventional metallic tip, as it is for them to move between Mn-rich layers within the material itself.