An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.     

Asa Issie, Aramis and the origin of Australopithecus

The origin of Australopithecus, the genus widely interpreted as ancestral to Homo, is a central problem in human evolutionary studies. Australopithecus species differ markedly from extant African apes and candidate ancestral hominids such as Ardipithecus, Orrorin and Sahelanthropus. The earliest described Australopithecus species is Au. anamensis, the probable chronospecies ancestor of Au. afarensis. Here we describe newly discovered fossils from the Middle Awash study area that extend the known Au. anamensis range into northeastern Ethiopia. The new fossils are from chronometrically controlled stratigraphic sequences and date to about 4.1-4.2 million years ago. They include diagnostic craniodental remains, the largest hominid canine yet recovered, and the earliest Australopithecus femur. These new fossils are sampled from a woodland context. Temporal and anatomical intermediacy between Ar. ramidus and Au. afarensis suggest a relatively rapid shift from Ardipithecus to Australopithecus in this region of Africa, involving either replacement or accelerated phyletic evolution.     

Structural basis of long-term potentiation in single dendritic spines

Dendritic spines of pyramidal neurons in the cerebral cortex undergo activity-dependent structural remodelling that has been proposed to be a cellular basis of learning and memory. How structural remodelling supports synaptic plasticity, such as long-term potentiation, and whether such plasticity is input-specific at the level of the individual spine has remained unknown. We investigated the structural basis of long-term potentiation using two-photon photolysis of caged glutamate at single spines of hippocampal CA1 pyramidal neurons. Here we show that repetitive quantum-like photorelease (uncaging) of glutamate induces a rapid and selective enlargement of stimulated spines that is transient in large mushroom spines but persistent in small spines. Spine enlargement is associated with an increase in AMPA-receptor-mediated currents at the stimulated synapse and is dependent on NMDA receptors, calmodulin and actin polymerization. Long-lasting spine enlargement also requires Ca2+/calmodulin-dependent protein kinase II. Our results thus indicate that spines individually follow Hebb's postulate for learning. They further suggest that small spines are preferential sites for long-term potentiation induction, whereas large spines might represent physical traces of long-term memory.     

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Nitride semiconductors are the materials of choice for a variety of device applications, notably optoelectronics and high-frequency/high-power electronics. One important practical goal is to realize such devices on large, flexible and affordable substrates, on which direct growth of nitride semiconductors of sufficient quality is problematic. Several techniques--such as laser lift-off--have been investigated to enable the transfer of nitride devices from one substrate to another, but existing methods still have some important disadvantages. Here we demonstrate that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. The h-BN layer serves two purposes: it acts as a buffer layer for the growth of high-quality GaN-based semiconductors, and provides a shear plane that makes it straightforward to release the resulting devices. We illustrate the potential versatility of this approach by using h-BN-buffered sapphire substrates to grow an AlGaN/GaN heterostructure with electron mobility of 1,100?cm(2)?V(-1)?s(-1), an InGaN/GaN multiple-quantum-well structure, and a multiple-quantum-well light-emitting diode. These device structures, ranging in area from five millimetres square to two centimetres square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.     

Solution-processed silicon films and transistors

The use of solution processes-as opposed to conventional vacuum processes and vapour-phase deposition-for the fabrication of electronic devices has received considerable attention for a wide range of applications, with a view to reducing processing costs. In particular, the ability to print semiconductor devices using liquid-phase materials could prove essential for some envisaged applications, such as large-area flexible displays. Recent research in this area has largely been focused on organic semiconductors, some of which have mobilities comparable to that of amorphous silicon (a-Si); but issues of reliability remain. Solution processing of metal chalcogenide semiconductors to fabricate stable and high-performance transistors has also been reported. This class of materials is being explored as a possible substitute for silicon, given the complex and expensive manufacturing processes required to fabricate devices from the latter. However, if high-quality silicon films could be prepared by a solution process, this situation might change drastically. Here we demonstrate the solution processing of silicon thin-film transistors (TFTs) using a silane-based liquid precursor. Using this precursor, we have prepared polycrystalline silicon (poly-Si) films by both spin-coating and ink-jet printing, from which we fabricate TFTs with mobilities of 108 cm2 V(-1) s(-1) and 6.5 cm2 V(-1) s(-1), respectively. Although the processing conditions have yet to be optimized, these mobilities are already greater than those that have been achieved in solution-processed organic TFTs, and they exceed those of a-Si TFTs (< or = 1 cm2 V(-1) s(-1)).     

From worklow to interworkflow

Workflow management systems are being introduced in many organizations to automate the business process. The initial emphasis of introducing a workflow management system is on its application to the workflow in a given organization. The next step is to interconnect the workflow across organizations. We call it interworkflow, and the total support technologies, which are necessary for its realization, interworkflow management mechanism. Interworkflow is being expected as a supporting mechanism for Business-to-Business Electronic Commerce. We had proposed this management mechanism and confirmed its realization with the prototype. At the same time, the interface and the protocol for interconnecting heterogeneous workflow management systems has been standardized by the WfMC. So, we advance the project of the implementation of interworkflow management system for the practical use and its experimental proof.     

A SNP in the ABCC11 gene is the determinant of human earwax type

Human earwax consists of wet and dry types. Dry earwax is frequent in East Asians, whereas wet earwax is common in other populations. Here we show that a SNP, 538G --> A (rs17822931), in the ABCC11 gene is responsible for determination of earwax type. The AA genotype corresponds to dry earwax, and GA and GG to wet type. A 27-bp deletion in ABCC11 exon 29 was also found in a few individuals of Asian ancestry. A functional assay demonstrated that cells with allele A show a lower excretory activity for cGMP than those with allele G. The allele A frequency shows a north-south and east-west downward geographical gradient; worldwide, it is highest in Chinese and Koreans, and a common dry-type haplotype is retained among various ethnic populations. These suggest that the allele A arose in northeast Asia and thereafter spread through the world. The 538G --> A SNP is the first example of DNA polymorphism determining a visible genetic trait.     

Fujitsu’s e-Business proposal

The explosive growth of the Internet has caused the new medium to step past just being another means of communication, and has acted as a catalyst to cause radical changes to the nature of business. Amongst the changes, e-Business, which brings internet technology to all areas of work in enterprises, is especially active. Many enterprises are showing strong interest the application server adapted internet technology, such as Web and Java, as the new platform for the next generation in enterprise computing environments. INTERSTAGE builds on the latest internet technology, and is a complete software platform centering on application server, which can support the various business applications required for e-Business. In this document we cover the overview of features and functions of INTERSTAGE, and introduce Fujitsu’s approach to e-Business through INTERSTAGE.