Photore sponse and H2 gas sensing properti es of highly oriented Al and Al/Sb doped ZnO thin films

ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage characterizations.It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate,a high reflectivity in the infrared region and a response to illumination.Furthermore,it has been found that Si/（ZnO:Al/Sb）/Al photodiode is promising in photoconduction device while Si/（ZnO:Al）/Al can be used as gas sensor responding to the low H₂concentrations.