Coulomb blockade and the Kondo effect in single-atom transistors

Using molecules as electronic components is a powerful new direction in the science and technology of nanometre-scale systems. Experiments to date have examined a multitude of molecules conducting in parallel, or, in some cases, transport through single molecules. The latter includes molecules probed in a two-terminal geometry using mechanically controlled break junctions or scanning probes as well as three-terminal single-molecule transistors made from carbon nanotubes, C(60) molecules, and conjugated molecules diluted in a less-conducting molecular layer. The ultimate limit would be a device where electrons hop on to, and off from, a single atom between two contacts. Here we describe transistors incorporating a transition-metal complex designed so that electron transport occurs through well-defined charge states of a single atom. We examine two related molecules containing a Co ion bonded to polypyridyl ligands, attached to insulating tethers of different lengths. Changing the length of the insulating tether alters the coupling of the ion to the electrodes, enabling the fabrication of devices that exhibit either single-electron phenomena, such as Coulomb blockade, or the Kondo effect.     

Inter omental-cerebral vascularization induced by omental graft to the rat brain

Summary The omentum of 13 rats were removed from the abdomen and placed directly on the brain. 5–14 days later the omentum and the underlying brain were joined by numerous vascular anastomoses in 9 rats. The purpose of this work was to study the use of omentum to establish extracranial vascularization of the brain.Supported by funds from Grant RR 514 from the Jefferson Medical College General Research Fund.     

Structural changes in glycogen phosphorylase induced by phosphorylation

A comparison of the refined crystal structures of dimeric glycogen phosphorylase b and a reveals structural changes that represent the first step in the activation of the enzyme. On phosphorylation of serine-14, the N-terminus of each subunit assumes an ordered helical conformation and binds to the surface of the dimer. The consequent structural changes at the N- and C-terminal regions lead to strengthened interactions between subunits and alter the binding sites for allosteric effectors and substrates.     

Structural basis of latency in plasminogen activator inhibitor-1.

Human plasminogen activator inhibitor-1 (PAI-1) is the fast-acting inhibitor of tissue plasminogen activator and urokinase and is a member of the serpin family of protease inhibitors. Serpins normally form complexes with their target proteases that dissociate very slowly as cleaved species and then fold into a highly stable inactive state in which the residues that flank the scissile bond (P1 and P1';) are separated by about 70 A. PAI-1 also spontaneously folds into a stable inactive state without cleavage; this state is termed 'latent' because inhibitory activity can be restored through denaturation and renaturation. Here we report the structure of intact latent PAI-1 determined by single-crystal X-ray diffraction to 2.6 A resolution. The three-dimensional structure reveals that residues on the N-terminal side of the primary recognition site are inserted as a central strand of the largest beta sheet, in positions similar to the corresponding residues in the cleaved form of the serpin alpha 1-proteinase inhibitor (alpha 1-PI). Residues C-terminal to the recognition site occupy positions on the surface of the molecule distinct from those of the corresponding residues in cleaved serpins or in the intact inactive serpin homologue, ovalbumin, and its cleavage product, plakalbumin. The structure of latent PAI-1 is similar to one formed after cleavage in other serpins, and the stability of both latent PAI-1 and cleaved serpins may be derived from the same structural features.     

HVPE异质外延GaN的函数控制方法研究

提出新的生长控制方式“函数控制方法”并将其应用到HVPE异质外延GaN中。函数控制方法是指外延生长参数随时间按照特定函数变化来实现生长控制的方式。采用函数控制方法设计了两个实验方案, 解决了HVPE获得GaN衬底面临的两个主要问题。1) 异质外延高质量无裂纹GaN厚膜的实验方案: 生长条件按照渐变函数变化保证了外延材料质量的稳定性和应力释放的均匀性, 生长条件按照周期函数变化将材料的厚膜外延问题转化为薄膜外延问题。2) GaN厚膜的自分离实验方案: 生长条件按照跃变函数变化实现了在外延材料特定位置形成弱连接层, 生长条件按照渐变函数变化实现了弱连接层两侧出现较大应力差, 这种应力差在生长结束后的降温过程中得到进一步放大, 进而实现外延材料在弱连接层处的自分离。结合以上两个实验方案, 成功获得无色透明表面平整光滑1 mm厚的高质量GaN衬底, 证明了函数控制方法的有效性。借助于生长参数规律化的函数变化, 函数控制方法建立了材料性质和数学函数之间的对应和联系, 丰富和发展了材料的生长控制方式。