低碳锰钢中周期性带状组织

用扫描电镜和电子探针研究了低碳锰钢中的周期性带状组织，结果表明，在全部研究用钢中，钢锭经热轧后均出现这种组织，其严重程度随钢的成分而异，并随坯带加工顺序而增加，带状组织与锰的显微偏析等因素有关，适当的调整碳锰以及形成模跨铁素体带的转变产物可降低带状组织的严重程度。     

The genome sequence of the plant pathogen Xylella fastidiosa. The Xylella fastidiosa Consortium of the Organization for Nucleotide Sequencing and Analysis

Xylella fastidiosa is a fastidious, xylem-limited bacterium that causes a range of economically important plant diseases. Here we report the complete genome sequence of X. fastidiosa clone 9a5c, which causes citrus variegated chlorosis--a serious disease of orange trees. The genome comprises a 52.7% GC-rich 2,679,305-base-pair (bp) circular chromosome and two plasmids of 51,158 bp and 1,285 bp. We can assign putative functions to 47% of the 2,904 predicted coding regions. Efficient metabolic functions are predicted, with sugars as the principal energy and carbon source, supporting existence in the nutrient-poor xylem sap. The mechanisms associated with pathogenicity and virulence involve toxins, antibiotics and ion sequestration systems, as well as bacterium-bacterium and bacterium-host interactions mediated by a range of proteins. Orthologues of some of these proteins have only been identified in animal and human pathogens; their presence in X. fastidiosa indicates that the molecular basis for bacterial pathogenicity is both conserved and independent of host. At least 83 genes are bacteriophage-derived and include virulence-associated genes from other bacteria, providing direct evidence of phage-mediated horizontal gene transfer.     

IT Diffusion,Implementation and Assimilation in Micro-Businesses – an Exploratory Study Based on a Process Approach

An important limitation of the management information systems (MIS) literature concerns the lack of a process model to understand how a system is assimilated by the organization. We seek to contribute to this topic through studying ERP adoption in two Chilean restaurants. In this paper is proposed that adoption occurs as a process composed of four stages and, therefore, it is presented findings from three of them. We used action-research (AR) as a methodological framework. Two AR cycles were performed in each case. Qualitative data was collected from the field through video recording, interviews, observation and social network analysis. Analysis data was analyzed by comparing results within-cases and between-cases. Three conclusions were reached: (1) during the implementation, a user-system negotiation cycle occurs; (2) after assimilating, the system must be constantly confirmed, otherwise can be abandoned; (3) speed of assimilation by group users depends of degree of influence in the social group of early adopters. Interestingly, an innovative micro-business owner could become a barrier to successful assimilation of a system. Findings introduce a dissenting view to most studies that have found that involvement of management is always beneficial to the success of a technology project. Our findings show involvement of owner impacts a successful adoption, but this impact is not because that person is the owner, but because of their degree of influence on the social group. Conclusions of this study will be of interest to micro, small and medium-business owners because it shows the value of social structure of the organization as a determinant of the success of a technological project.     

Large disparity between gallium and antimony self-diffusion in gallium antimonide

The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice ('self-') atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally activated process. Self-diffusion studies also contribute to the understanding of the diffusion of impurities, and a quantitative understanding of self- and foreign-atom diffusion in semiconductors is central to the development of advanced electronic devices. In the past few years, self-diffusion studies have been performed successfully with isotopically controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide. Self-diffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion, as only Ga has two stable isotopes, 69Ga and 71Ga. Here we report self-diffusion studies with an isotopically controlled multilayer structure of crystalline GaSb. Two stable isotopes exist for both Ga and Sb, allowing the simultaneous study of diffusion on both sublattices. Our experiments show that near the melting temperature, Ga diffuses more rapidly than Sb by over three orders of magnitude. This surprisingly large difference in atomic mobility requires a physical explanation going beyond standard diffusion models. Combining our data for Ga and Sb diffusion with related results for foreign-atom diffusion in GaSb (refs 8, 9), we conclude that the unusually slow Sb diffusion in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices, which suppress the defects that are required for Sb diffusion.