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Hannane Benelmadjat Boubekeur Boudine Aissa Keffous Noureddine Gabouze 《自然科学进展(英文版)》2013,23(6):519-523
ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage characterizations.It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate,a high reflectivity in the infrared region and a response to illumination.Furthermore,it has been found that Si/(ZnO:Al/Sb)/Al photodiode is promising in photoconduction device while Si/(ZnO:Al)/Al can be used as gas sensor responding to the low H2concentrations. 相似文献
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