Dynamics of the silicon (111) surface phase transition

The manner in which phase transformations occur in solids determines important structural and physical properties of many materials. The main problem in characterizing the kinetic processes that occur during phase transformations is the difficulty of observing directly, in real time, the growth of one phase at the expense of another. Here we use low-energy electron microscopy to study the real-time kinetics of a phase transformation confined to the silicon (111) surface. We show that the transformation is governed by the rate at which material is exchanged between the first layer of the crystal and the surface. In bulk phase transformations, the dynamics are usually governed either by the rate of diffusion of material to the phase boundaries or by the structural rearrangement of atoms at the phase boundary. The kinetic process that we have identified here has no bulk analogue and leads to domain dynamics that are qualitatively different from those expected for bulk systems.     

Vacancies in solids and the stability of surface morphology

Determining how thermal vacancies are created and destroyed in solids is crucial for understanding many of their physical properties, such as solid-state diffusion. Surfaces are known to be good sources and sinks for bulk vacancies, but directly determining where the exchange between the surface and the bulk occurs is difficult. Here we show that vacancy generation (and annihilation) on the (110) surface of an ordered nickel-aluminium intermetallic alloy does not occur over the entire surface, but only near atomic step edges. This has been determined by oscillating the sample's temperature and observing in real time the response of the surface structure as a function of frequency (a version of Angstr?m's method of measuring thermal conductivity) using low-energy electron microscopy. Although the surface-exchange process is slow compared with bulk diffusion, the vacancy-generation rate nevertheless controls the dynamics of the alloy surface morphology. These observations, demonstrating that surface smoothing can occur through bulk vacancy transport rather than surface diffusion, should have important implications for the stability of fabricated nanoscale structures.     

Nanostructures. Self-assembled domain patterns

The ordered domain patterns that form spontaneously in a wide variety of chemical and physical systems as a result of competing interatomic interactions can be used as templates for fabricating nanostructures. Here we describe a new self-assembling domain pattern on a solid surface that involves two surface structures of lead on copper. The evolution of the system agrees with theoretical predictions, enabling us to probe the interatomic force parameters that are crucial to the process.     

Dislocation multi-junctions and strain hardening

At the microscopic scale, the strength of a crystal derives from the motion, multiplication and interaction of distinctive line defects called dislocations. First proposed theoretically in 1934 (refs 1-3) to explain low magnitudes of crystal strength observed experimentally, the existence of dislocations was confirmed two decades later. Much of the research in dislocation physics has since focused on dislocation interactions and their role in strain hardening, a common phenomenon in which continued deformation increases a crystal's strength. The existing theory relates strain hardening to pair-wise dislocation reactions in which two intersecting dislocations form junctions that tie the dislocations together. Here we report that interactions among three dislocations result in the formation of unusual elements of dislocation network topology, termed 'multi-junctions'. We first predict the existence of multi-junctions using dislocation dynamics and atomistic simulations and then confirm their existence by transmission electron microscopy experiments in single-crystal molybdenum. In large-scale dislocation dynamics simulations, multi-junctions present very strong, nearly indestructible, obstacles to dislocation motion and furnish new sources for dislocation multiplication, thereby playing an essential role in the evolution of dislocation microstructure and strength of deforming crystals. Simulation analyses conclude that multi-junctions are responsible for the strong orientation dependence of strain hardening in body-centred cubic crystals.