Compound machining of silicon carbide ceramics by high speed end electrical discharge milling and mechanical grinding

A compound process that integrates end electrical discharge (ED) milling and mechanical grinding to machine silicon carbide (SiC) ceramics is developed in this paper. The process employs a turntable with several uniformly-distributed cylindrical copper electrodes and abrasive sticks as the tool, and uses a water-based emulsion as the machining fluid. End electrical discharge milling and mechanical grinding happen alternately and are mutually beneficial, so the process is able to effectively machine a large surface area on SiC ceramic with a good surface quality. The machining principle and characteristics of the technique are introduced. The effects of polarity, pulse duration, pulse interval, open-circuit voltage, discharge current, diamond grit size, emulsion concentration, emulsion flux, milling depth and tool stick number on performance parameters such as the material removal rate, tool wear ratio, and surface roughness have been investigated. In addition, the microstructure of the machined surface under different machining conditions is examined with a scanning electron microscope and an energy dispersive spectrometer. The SiC ceramic was mainly removed by end ED milling during the initial rough machining mode, whereas it is mainly removed by mechanical grinding during the later finer machining mode; moreover, the tool material can transfer to the workpiece surface during the compound process.     

Effect of the free surface on the earthquake energy: A case study of reverse faulting

Based on the representation theorem of seismic energy radiation, in this study, we have quantitatively investigated the effect of free surface on the radiation energy distribution due to a coupling interaction between free surface and near surface finite fault for the reverse earthquake faulting. Corresponding to the finite faulting, a 2-D pseudostatic-reverse-fault-dislocation solution has been used in the calculation of the work done by the seismic response against free surface. The results indicate that, due to a strong coupling interaction between the free surface and near surface fault, the total radiated seismic energy ER is much larger than that radiated only from the fault itself （EF）, especially for the shallow reverse faulting. In convention, EF is commonly used in the estimation of earthquake energy radiation. However, when the fault depth H, the distance between the free surface and top of fault location, increases, the effect of the coupling interaction between the fault and free surface decreases gradually. Therefore, the total radiated energy ER approaches to the EF when the depth H is about 2 times the fault length L The current study could provide us a partial explanation of the apparent stress discrepancy observed at the far field and near field in the recent large earthquake. Moreover, the current study also has a significant implication of how to quantitatively describe the near fault strong ground motion and associated seismic hazard from the earthquake source energy point of view.     

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophoto- meter. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickn...     

月地高速再入返回飞行器供配电系统设计与实现

结合月地高速再入返回飞行器主要任务特点,简要介绍了供配电系统的功能、主要指标、多舱段联合供电电源系统方案,提出了高比能量锌银蓄电池设计、多模式氢镍蓄电池充电策略、多母线均流设计等方法,解决了返回再入飞行器在复杂空间环境下的高可靠轻小型化供配电系统设计难题.在轨飞行试验结果表明:供配电系统功能正常,工作可靠,性能优良.提出的再入返回飞行器供配电系统分析与设计方法,满足并确保了再入返回飞行试验任务的可靠实现,可为未来探月及其他深空探测领域供配电系统设计提供参考和借鉴.     

正反弹道Taylor撞击变形等效性研究

反弹道撞击试验在材料与结构的动力学响应研究领域已有广泛应用,相比正向Taylor试验,反弹道条件下Taylor撞击试验可获得更全面的弹/杆结构响应数据及量化测试结果.为研究正反弹道结构响应的等效性条件,开展不同长径比Taylor杆的正反撞击试验,获得了试件微秒量级的实时动态响应数据.利用数值模拟方法研究了不同撞击速度下结构变形、能量变化与塑性波的传播规律,从能量角度建立了两种撞击条件下结构变形的等效关系,在靶弹质量比大于20的条件下,正反撞击塑性功偏差小于5%.     

Green fluorescent protein （GFP） as a vital marker for studying the interaction of Phytophthora sojae and soybean

Transgenic Phytophthora sojae strains that produce green fluorescent protein （GFP） were obtained after stable DNA integration using the Hsp70 promoter and the Ham34 terminator of Bremia lactucae. The expression of GFP during different developmental stages of P. sojae was observed using fluorescent microscopy. Based on this reporter system, the histopathologic events caused by the pathogen in soybean leaves, hypocotyls and roots were monitored. Meanwhile, the difference in resistance between different soybean cultivars against P. sojae was analyzed microscopically in roots. The results indicate that GFP can be stably expressed in zoosporangia, zoospores, cysts, hyphae and oospores of P. sojae. Using the GFP marker, the infecting pathogens in leaves, hypocotyls and roots of host could be distinctly visualized. The germ tube length of cysts germinating on the roots of resistant cultivar Nannong 8848 was longer than that on the roots of susceptible cultivar Hefeng 35. These results show for the first time that this eukaryotic reporter can be used in P. sojae as a stable and vital marker, allowing the study of genetics of this hemibiotrophic pathogen.     

InGaN单结太阳电池中的浅能级杂质的理论计算和模拟

通过氢有效质量理论(HEMT)对In0.65Ga0.35N(高In组分,Eg=1.31eV)太阳电池材料进行分析,计算出其浅能级施主和受主的重要性质参数电离能:ΔED～10.8meV,ΔEA～90meV.在此基础上得到了室温条件下In0.65Ga0.35N的浅能级施主和受主强电离时的杂质浓度范围:施主9.56×108～4.57×1016cm-3,受主9.56×108～7.84×1016cm-3;并估算了产生杂质能带的最低杂质浓度:施主～1×1018cm-3,受主～5.79×1020cm-3.然后借助AMPS-1D软件对含有部分电离的浅能级施主、受主In0.65Ga0.35N单结太阳电池进行模拟,详细讨论了施主能级和受主能级对载流子的俘获对太阳电池效率的影响.本文结果为InGaN单结和多结太阳电池的掺杂(尤其是p型掺杂)和制备提供了理论参考和帮助。