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Analytical solutions are presented for the wave equation for the electrode-piezoelectric-electrode sandwich structure in film bulk acoustic resonators (FBAR). The impedance for lead-zirconate-titanate (PZT)-based FBAR was derived using the proper boundary conditions and material parameters. A method is presented to adjust the resonant frequency based on the process and material properties. Ferroelectric-based radio-frequency filters were designed using FBARs. An accurate result is given for the filter impedance which can be used for other piezoelectric devices. 相似文献
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The most common typical bulk acoustic wave (BAW) filters are fabricated using bulk micromachining technology, but they have several disadvantages. This paper describes a new structure for front end passband BAW filters manufactured using surface micromachining. Porous silicon is used as a thick sacrificial layer. The structure reduces the influence of the support film on the filter to improve the VLSI compatibility as well as the filter quality. The cross-talk between resonators with different frequencies can be dramatically reduced by using resonators with a self-supporting structure. 相似文献
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