低亚阈值摆幅铝掺杂二氧化铪铁电材料金属-铁电层-绝缘层-半导体场效晶体管研究(英文)#br#

The recently discovered HfO2-based ferroelectric materials have drawn much attention owing to their high CMOS-compatibility and scalability. A fully CMOS-compatible Al-doped HfO2-based metalferroelectric-insulator-semiconductor field-effect-transistor (MFIS-FET) was fabricated for the first time.The electrical properties, including I-V and C-V characteristics, of the MFIS-FET were characterized. A subthreshold swing of 27 mV/decade is achieved in the n-channel MFIS-FET with TiN/Al-doped HfO2/SiO2/Si gate stack. The gate leakage current was also addressed. It is derived that the Poole-Frenkel effect should be the conduction mechanism of the gate leakage current in the Al-doped HfO2-based MFISFET.     

低亚阈值摆幅铝掺杂二氧化铪铁电材料金属-铁电层-绝缘层-半导体场效晶体管研究

首次制备了完全CMOS工艺兼容的铝掺杂二氧化铪铁电材料金属-铁电层-绝缘层-半导体场效晶体管,并对其电学特性,如I-V,C-V等进行测量与分析,最终实现亚阈值摆幅为27 mV/decade的金氧半场效晶体管.栅极漏电流机制亦被探讨,并推断出Poole-Frenkel效应是产生铝掺杂二氧化铪铁电材料晶体管漏电流的主要原因...     

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