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对化学法清洗硅片过程中消除颗粒的机理作了定量的探讨。颗粒的清除是由于化学蚀刻和颗粒与表面排斥力共同作用的结果。首次提出了最浅蚀刻深度和最小蚀刻速度的概念。最浅蚀刻深度可通过颗粒与表面间作用能的关系进行计算。是小蚀刻速度则可通过蚀刻侧形进行计算。研究结果对于优化化学法清洗过程和设计高性能清洗液都具有重要意义。 相似文献
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Charcot-Marie-Tooth type 4B is caused by mutations in the gene encoding myotubularin-related protein-2 总被引:21,自引:0,他引:21
Bolino A Muglia M Conforti FL LeGuern E Salih MA Georgiou DM Christodoulou K Hausmanowa-Petrusewicz I Mandich P Schenone A Gambardella A Bono F Quattrone A Devoto M Monaco AP 《Nature genetics》2000,25(1):17-19
A gene mutated in Charcot-Marie-Tooth disease type 4B (CMT4B), an autosomal recessive demyelinating neuropathy with myelin outfoldings, has been mapped on chromosome 11q22. Using a positional-cloning strategy, we identified in unrelated CMT4B patients mutations occurring in the gene MTMR2, encoding myotubularin-related protein-2, a dual specificity phosphatase (DSP). 相似文献
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