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971.
本文介绍了经不同表面处理制成的PECVD Si为_2/InP 結构的俄歇电子能谱(AES)和X光电子能谱(XPS),分析了SiO_2/InP结构介质层、界面过渡区和体内区的化学组分和组志。并研究了表面处理对SiO_2/InP界面过渡区宽度及其化学物理结构的影响。  相似文献   
972.
通过单人系统取样,用筛析法对云南大理盆地隐仙溪河道沉积物进行了粒度分析。结果表明,河流上游以砾石沉积为主,平均质量分数(含量)达57.92%以上,砾石粒径以10~50cm为主,在砂质沉积物中以粗砂为主,其含量达28 35%,中细砂含量只有13.76%;河流中游虽然也以砾石沉积为主,但砾石粒径明显变小,以5~10cm为主;河流下游则以砂质沉积物为主,其中中砂、细砂和粉砂总含量高达77.64%,尤其是细砂和粉砂含量显著升高,分别达到27.96%和32.26%,而粗砂和砾石含量明显降低。不同河段沉积物粒度及其含量的变化主要受水动力条件、地形坡度和搬运距离控制,但搬运距离与沉积物粒度之间不存在简单的线性对应关系。  相似文献   
973.
Preparation of double-walled carbon nanotubes   总被引:1,自引:0,他引:1  
Double-walled carbon nanotubes were prepared using the floating chemical vapor deposition with methane as carbon source and adding small amount of sulfur into the ferrocene catalyst. The optimized technological parameters are: the reaction temperature is 1200℃; the catalyst vapor temperature is 80℃; the flow rate of argon is 2000 SCCM; the flow rate of methane is 5 SCCM. The purified DWNTs under these optimized technological parameters have high purity above 90 wt%.  相似文献   
974.
975.
采用射频TCP(Transverse coup led p lasm a)等离子体辅助电子枪蒸发技术首次在室温下制备了氮化铝薄膜,用傅立叶变换红外光谱仪分析了氮化铝薄膜红外光谱的特性.利用朗缪尔静电单探针诊断了射频TCP离子束辅助电子枪蒸发镀膜装置反应室内等离子体密度的空间分布规律,并分析了气压对等离子体分布的影响.离子源口等离子体密度较大,但分布不均匀;反应室内等离子体迅速扩散,密度变小,分布趋向于均匀.  相似文献   
976.
The study on steranes with substitution at C-2, C-3 or C-4 positions in ring-A has become a hot field for their specific precursors in recent years[1-15]. Summons et al. firstly identified C28-C30 3β-methyl steranes in Michigan Basin and found that the p…  相似文献   
977.
MgB2 superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL2O3 substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density Jc of 107 A/cm2 at 15 K in zero field for the thin film and of 105 A/cm2 for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.  相似文献   
978.
MD膜驱剂对油藏矿物ζ电位的影响   总被引:1,自引:0,他引:1  
用微电泳法考察了3种季铵盐(MD膜驱剂、四乙基溴化铵((Et)4NB)、十六烷基三甲基溴化铵(CTAB))和无机盐对石英砂和大庆油砂界面电性的影响.结果表明,3种季铵盐对石英砂ζ电位影响的顺序为:CTAB>MD膜驱剂>(Et)4NB.无机盐使石英砂在MD膜驱剂溶液中的ζ电位升高,无机盐中的Al3+离子影响比Ca2+和Na+离子明显.大庆油砂在MD膜驱剂和(Et)4NB溶液中的ζ电位较沥青质-大庆油砂的低,而大庆油砂在吸附沥青质前后在CTAB溶液中的ζ电位变化很小.理论计算表明,沥青质-大庆油砂饱和吸附季铵盐的ζ电位大于大庆油砂,季铵盐在沥青质-大庆油砂表面的相对覆盖率小于大庆油砂.  相似文献   
979.
In this paper, a novel and efficient study on the hydrological processes of storm runoff from catchments of different land uses is conducted. The motivation is to precisely simulate the hydrological processes of storm runoff in the agricultural catchments with different patterns of land uses, i.e., forest, paddy, and upland, respectively. As it is discussed in this paper, different land use leads to different characteristics of storm runoff. In order to understand the changes in the hydrological processes of storm runoff from catchments of different land uses, the effects of rainfall intensity, initial soil moisture deficit, evapotranspiration rate, percolation rate, and retention capacity on hydrological processes of the catchments are taken into consideration. According to the principle of water balance, a general model to connect the separate hydrological processes is developed; then, the individual hydrological process is studied in detail: Firstly, the daily evaporation is calculated according to the relation between the actual evapotranspiration and the potential evapotranspiration rate; Secondly, the retention of storm runoff is plotted against the total rainfall, and the maximum storage is calculated; Thirdly, the percolation rate is calculated for each catchment.  相似文献   
980.
The paper reports our novel work on chemical vapor deposition coating of titanium nitride (TIN) thin film on glass for energy saving. TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) using titanium tetrachloride (TiCl4) and ammonia (NH3) as precursors. As a result, TiN films with a thickness of 500 nm were obtained. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), four-point probe method and optical spectroscopy were respectively employed to study the crystallization, microstructure, surface morphology, electrical and optical properties of the coated TiN films. The deposited TiN films are of NaCI structure with a preferred (200) orientation. The particles in the film are uniform. The reflectivity of the TiN coating in the near-infrared (NIR) band can reach over 40%, the visible transmittance is approximately 60%, and the visible refiectivity is lower than 10%. The sheet electrical resistance is 34.5 Ω. According to Drude theory, the lower sheet resistance of 34.5 Ω gives a high reflectivity of 71.5% around middle-far infrared band. The coated films exhibit good energy-saving performance.  相似文献   
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