硅压力传感器基座受力变形时的输出性能

为分析硅压力传感器基座受力变形对传感器输出性能的影响,首先利用弹性力学理论和板壳理论分析推导了压力传感器方形膜片应力分布,为力敏电阻在应变膜上的布置提供依据;再利用ANSYS进行分析模拟,探究了传感器基座结构变形对应变膜应力差的影响;然后针对减小基座受力变形对芯片受力的影响,对基座结构进行适当优化,并对比仿真分析的结果;最后通过实验测得优化前后的传感器输出数据.结果表明,传感器基座结构优化后,传感器硅芯片中心最大变形量从2.172μm降低到1.819μm,输出误差从0.95%下降到0.60%.     

金属纳米粒子对非晶硅太阳能电池性能影响的理论模拟

使用时域有限差分(FDTD)方法,在标准太阳光下模拟非晶硅太阳能电池表面上有序排列的Ag或Au纳米颗粒对电池的光吸收增强效应.结果表明:通过改变金属颗粒的直径和粒子周期性间距等不同条件,光吸收的增强效应有规律地变化.结合AMPS-1D模拟软件对非晶硅电池的电学性能进行计算,在标准太阳光下,使用直径为200 nm、周期性间距为600 nm的Ag纳米粒子可以使非晶硅电池效率的提高幅度达到23.4％.     

聚合物影响Al-MCM-41结构和形貌的研究

利用硝酸铝自行水解产生的弱酸环境为反应介质,使硅源正硅酸乙酯(TEOS)充分水解,随后引入氨水使无机物种聚合,通过水解-聚合两步途径,制备了硅铝介孔分子筛,考察了不同聚合物添加对其分散性及结构的影响.N2吸附-脱附、TEM和XRD表征结果表明:聚乙二醇(PEG)和聚乙烯吡咯烷酮(PVP)的添加有利于提高介孔硅铝分子筛的分散性和介孔结构的有序度.     

取向硅钢薄带形变再结晶组织及织构演变

利用背散射电子衍射微织构分析技术及X射线衍射织构分析技术,结合对取向硅钢薄带再结晶各阶段退火板磁性能的分析,系统研究了其形变再结晶过程中的组织及织构演变。结果表明,薄带内原始高斯晶粒取向发生绕TD轴向{111}<112>的转变,同时晶粒取向还表现出绕RD轴的附加转动,这种附加转动及其导致的表层微弱立方形变组织可为再结晶立方织构的形成提供核心。退火各阶段样品磁性能的变化对应了{110}-{100}<001>有益织构及其他织构的强弱转变以及再结晶晶粒不均匀程度的变化,综合织构类型及晶粒尺寸的变化推断发生了二次及三次再结晶过程。升温过程再结晶织构演变主要体现了织构诱发机制,也即与基体存在绕<001>轴取向关系的晶粒长大优势结合高斯织构的抑制效应发挥作用;而在高温长时间保温后三次再结晶过程,{110}低表面能诱发异常长大发挥主要作用使得最终得到锋锐的高斯织构。     

硅臂加工误差对微靶装配精度的影响研究

为预测加工误差对微靶装配精度的影响,开展了加工误差对硅臂刚度及应力分布的影响研究. 基于PRO/E逆向工程对实际加工的硅臂样品建模,并搭建实验平台,建立微力与微位移关系的数学模型. 采用仿真与实验相结合的方法,对硅臂存在加工误差与无加工误差的情况下的刚度进行对比,定量预测微靶的装配精度. 研究表明为提高装配精度,必须充分考虑装配力和形位误差形成的非线性误差和非均匀应力场的影响.      

Vertically aligned ZnO nanorods on porous silicon substrates: Effect of growth time

Vertically aligned ZnO nanorods were successfully grown on porous silicon(PS) substrates by chemical bath deposition at a low temperature.X-ray diffraction, field-emission scanning electron microscopy(FESEM), transmission electron microscopy(TEM), and photoluminescence(PL)analyses were carried out to investigate the effect of growth duration(2 h to 8 h) on the optical and structural properties of the aligned ZnO nanorods. Strong and sharp ZnO(0 0 2) peaks of the ZnO nanorods proved that the aligned ZnO nanorods were preferentially fabricated along the c-axis of the hexagonal wurtzite structure. FESEM images demonstrated that the Zn O nanorod arrays were well aligned along the c-axis and perpendicular to the PS substrates regardless of the growth duration. The TEM image showed that the top surfaces of the ZnO nanorods were round with a smooth curvature. PL spectra demonstrated that the ZnO nanorods grown for 5 h exhibited the sharpest and most intense PL peaks within the ultraviolet range among all samples.     

Radiation hardness characterization of low gain avalanche detector prototypes for the high granularity timing detector

The high granularity timing detector (HGTD) is a crucial component of the ATLAS phase II upgrade to cope with the extremely high pile-up (the average number of interactions per bunch crossing can be as high as 200). With the precise timing information (σ_t～30 ps) of the tracks, the track-to-vertex association can be performed in the “4-D” space. The Low Gain Avalanche Detector (LGAD) technology is chosen for the sensors, which can provide the required timing resolution and good signal-to-noise ratio. Hamamatsu Photonics K.K. (HPK) has produced the LGAD with thicknesses of 35 μm and 50 μm. The University of Science and Technology of China(USTC) has also developed and produced 50 μm LGADs prototypes with the Institute of Microelectronics (IME) of Chinese Academy of Sciences. To evaluate the irradiation hardness, the sensors are irradiated with the neutron at the JSI reactor facility and tested at USTC. The irradiation effects on both the gain layer and the bulk are characterized by I-V and C-V measurements at room temperature (20 ℃) or ?30 ℃. The breakdown voltages and depletion voltages are extracted and presented as a function of the fluences. The final fitting of the acceptor removal model yielded the c-factor of 3.06×10?16 cm?2, 3.89×10?16 cm?2 and 4.12×10?16 cm?2 for the HPK-1.2, HPK-3.2 and USTC-1.1-W8, respectively, showing that the HPK-1.2 sensors have the most irradiation resistant gain layer. A novel analysis method is used to further exploit the data to get the relationship between the c-factor and initial doping density.     

Preparation and kinetic analysis of Li4SiO4 sorbents with different silicon sources for high temperature CO2 capture

Using diatomite and analytical pure SiO2 as silicon sources,Li4SiO4 sorbents for high temperature CO2 capture were prepared through solid-state reaction method.Phase composition was analyzed by X-ray diffraction,and the CO2 absorption capacity and absorptoin-desorption performance were studied by the simultaneous thermal thermogravimetric analyzer(TG-DSC).The results showed that silicon source had an important influence on CO2 absorption properties.The kinetic parameters for the chemisorption and diffusion processes were obtained by the isothermal study for different silicon sources.The results showed that the activation energies for these two processes were estimated to be 105.427 and 35.928 kJ/mol for the sample with analytical pure SiO2(AS).While for the sample with diatomite(DS),the activation energies for these two processes were estimated to be 78.500 and 20.439 kJ/mol,respectively.     

12—硅钼酸降解产物SiMo11铵盐的合成

在对SiMo_(12)杂多酸降解过程的研究中,首次从H_4SiMo_(12)O_(40)直接降解合成出其降解产物(NH_4)_8[SiMo_(11)O_(39)]·14H_2O。经组成分析,确认其为SiMo_(11)铵盐。利用紫外光谱分析、红外光谱分析、x射线粉末衍射、电位滴定、tga—dta热分析、薄板层析等现代分析手段对合成产物的性质进行了研究。     

硅单晶中的氢催化氧沉淀

红外光谱法研究了硅单晶中的氢催化氧沉淀。