三类滇产茶的红外光谱解析及三级鉴定

为了建立一种滇产绿茶、红茶及普洱熟茶的红外光谱鉴定方法,通过采集三类茶的红外光谱及二维相关红外光谱并进行三级红外光谱(傅里叶变换红外光谱结合二阶导数红外光谱及二维相关红外光谱)解析.红外光谱对比分析表明:1 644、1 517、1 451、1 237及1 040 cm-1是三类茶的共有特征峰,它们的吸收强度从绿茶、红茶到普洱熟茶依次减弱;二阶导数谱中,三类茶间的吸收峰位置、强度差异更加明显;与草酸钙的二阶导数谱对比分析发现,三类茶的草酸钙相对含量为:绿茶<红茶<普洱熟茶.二维相关红外光谱显示了三类茶的最强自动峰分别为1 635、1 563及1 639 cm-1,通过三级红外光谱分析可实现三类滇产茶的鉴定.     

混凝土模拟液中钢筋腐蚀电化学测试结果比较

为了研究电化学噪声(ENM)、电化学阻抗谱(EIS)和线性极化(LPR)3种方法对混凝土中钢筋锈蚀情况评价的可靠性,采用不同Cl-浓度的高碱性模拟液对钢筋进行浸泡,在钝化期和腐蚀期分别用3种方法测试了极化电阻,并分析了不同方法对腐蚀机理的表征.结果表明:3种方法得出的极化电阻值比较接近;当体系处于活化腐蚀状态时,ENM和LPR结果符合较好,EIS结果略小;当体系处于钝化状态时,EIS和LPR结果吻合,而ENM结果明显偏小;ENM和EIS对腐蚀机理的表征是一致的.3种方法对钢筋腐蚀的评价均具有较高的可靠性.     

软X射线分光晶体TAP缺陷成因的研究

测定了ＴＡＰ晶体中铊离子的价态，发现ＴＡＰ晶体中除了一价的铊离子Ｔｌ＋外，还有少量三价铊离子Ｔｌ３＋的存在．实验还测定ＴＡＰ晶体中存在的金属离子杂质，总量为０２０７ｍｇ／ｇ．联系ＴＡＰ结构的特点讨论了ＴＡＰ晶体存在Ｔｌ３＋和金属离子杂质是产生ＴＡＰ晶体结构缺陷的重要原因，并分析了ＴＡＰ晶体位错线基本走向平行于ｃ轴的原因     

高灵敏度分子离子吸收光谱技术及其应用

综述了测量分子离子吸收光谱的速度调制技术的产生背景和发展进程，着重介绍了高灵敏度的光外差磁旋转速度调制光谱技术的实验装置、特点以及应用这项技术的新的研究成果。     

Study of a new ytterbium doped phosphate laser glass

Physical, and spectral properties of a new commercial ytterbium doped phosphate laser glass with big size, NEW/Yb, was researched. Assessing from thermal mechanical property, nonlinear property, crystalline phase, micro defects and spectroscopic properties of NEW/Yb and Kigre's QX/Yb glasses, it is found that thermal-optical properties and glass internal quality of NEW/Yb glass are superior to QX/Yb glass. For NEW/Yb, the emission cross-section and fluorescent lifetime have a value of 0.53×10 pm2 and 2.2 ms, which are higher than those of QX/Yb.     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation

Ultrathin SiO 2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃). The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO 2 and the SiO 2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure shows that the fixed charge density in SiO 2 film is about 10 11 cm -2 . It is also shown that the strength of breakdown electrical field of SiO 2 film with 6 nm thickness is of the order of 10 6 Vcm -1 . These properties of the ultrathin SiO 2 layer ensure its application in silicon quantum devices.     

准分子激光诱导结晶硅膜的Raman光谱分析

采用XeCl准分子激光器对PECVD法生长的非晶硅膜进行了诱导晶化处理,对结晶膜的晶体质量进行了Raman光谱表征,研究表明,对于非扫描模式,晶化前去氢处理可使结晶膜具有更高的结晶度,即氢的存在阻碍非晶硅的晶化,玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响,在150～450mJ/cm^2,结晶膜的结晶度随能量密度的增大而提高,结晶膜中存在由非晶硅熔化与重结晶引入的张应力。     

反应等离子喷涂TiN涂层电化学腐蚀行为

利用电化学阻抗谱等电化学方法及扫描电镜(SEM)技术,研究了反应等离子喷涂TiN涂层在模拟海水中的电化学腐蚀行为. 研究结果表明:TiN涂层的自腐蚀电位高于基体,涂层对基体能起到良好的腐蚀屏蔽作用;腐蚀介质通过涂层的通孔、微裂纹等缺陷渗入涂层与基体的界面腐蚀基体,从而使涂层电阻下降、电容增加,所产生的腐蚀产物在一定程度上可以抑制腐蚀反应的进行,但不会阻止基体局部腐蚀的继续进行. 涂层的孔隙是造成涂层电化学腐蚀的主要原因.     

裂解气相色谱质谱法研究甲壳素裂解作用

于400-570℃之间，对甲壳素进行热裂解作用，用气相色谱质谱仪鉴别裂解产物．随裂解温度上升，裂解产物急剧增加．在570℃时，出现57个色谱峰，鉴定了其中55种裂解产物，主要裂解产物为醛、酮、酸和酯类、杂环化合物和糖类化合物等．甲基-N-（乙酰基）-D-葡糖胺等是甲壳素的特歹正性裂解产物．甲壳素裂解过程中，发生链剪切作用，聚合物链断裂．经过分子重排，环化，次级反应等形成了各种裂解产物．