中孔Ag微米盘/ZnO纳米棒阵列异质结的构筑及光催化研究

利用简单的两步合成法制备得到新颖的中孔Ag微米盘（HMDs）/ZnO纳米棒（NRs）异质结,主要包括上晶种和异质外延生长.通过简单的合成参数调控,可以制备不同纳米直径、不同长度、不同形状的ZnO NRs,进而制成不同形貌的Ag/ZnO异质结.结构新颖的Ag/ZnO异质结由一维（1D）半导体和二维（2D）纳米结构元构成,Ag/ZnO异质结具有高比表面积和开放的空间结构,在光电领域具有很重要的应用潜力.在光催化测试中,Ag/ZnO异质结表现出优越的催化活性,主要归因于结构独特的Ag/ZnO异质结的协同效应.     

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.     

磁控溅射生长AlN钝化层的研究

测得AlN和Si3N4介质钝化后的AlGaN/GaN异质结的高频C-V（电容-电压）曲线,由此计算钝化层与AlGaN势垒层界面电荷面密度,发现AlN钝化层与势垒层界面的电荷面密度较Si3N4更大,同时AlN钝化层薄膜含有的可移动离子数目更多.根据I-V（电流-电压）曲线讨论了用磁控溅射技术生长的AlN钝化薄膜质量,发现AlN薄膜绝缘性不够好,可能是在室温磁控溅射生长过程中从靶材溅射出的Al原子未能与N2充分反应,导致沉积的AlN薄膜不够致密,含有的电子隧穿通道多.因此可改善反应条件以提高AlN薄膜质量.