广义的Aitken△~2-过程对极限k(k≥2)循环连分式的加速收敛

本文对极限k(k≥2)循环连分式的渐进分式序列引入广义的Aitken△~2一过程,在一定条件下,用它来对极限k(k≥2)循环连分式进行加速收敛,给出了数值结果,并讨论了r=0的情况。     

低碳微量铌钢过冷奥氏体形变过程中的碳氮化物析出

利用透射电镜研究了低碳微量铌钢过冷奥氏体形变过程中的碳氮化物析出,运用Gladman晶粒粗化机制讨论了析出相颗粒的平均直径、体积分数和铁素体晶粒尺寸的关系.实验结果表明:实验用钢中的微量Nb在1 200℃时完全固溶,并在760℃变形前的冷却过程中无Nb(CN)析出.在形变过程中Nb(CN)的析出同样需要孕育期,但与等温过程相比大大提前.当变形量积累到一定值(本实验条件下ε=0.69)时,大量动态析出的Nb(CN)颗粒弥散分布在晶界以及位错线上.Nb(CN)析出随着应变量的增加而增加,但颗粒长大不明显,计算得到的铁素体晶粒平均截径与实际测得的铁素体晶粒吻合得较好.     

{αn}≤{βn}对所有正整数n成立是否蕴涵{α}={β}?

运用连分数理论证明了下面两个结果:①如果α,β为正实数且α不为整数,对所有正整数n满足{αn}≤{βn},那么{α}={β};②如果,αβ为正有理数,对所有素数p有{αp}≤{βp},那么{α}={β}.同时提出两个问题:①是否对n2也成立?②是否对,αβ为正无理数也成立?     

中国历代日月交食周期的研究

中国自西汉至南宋共使用了２９个日月交食周期，如重复不计，实有２２个周期。计算交食周期的方程式通常有下列六式：（１）半食年／朔望月＝会月／会率，（２）半食年／回归年＝会岁／会率，（３）食年／朔望月＝会月／朔望合数（交率），（４）食年／回归年＝会岁／朔望合数（交率），（５）交点月／朔望月＝会月／交数，（６）食年／交点月＝交数／交率。中国古代以“大衍求一术”计算交食周期，与近代用连分数法算得的结果完全相同。经验算，绝大部分交食周期十分准确、密近。本文还对王充（甲）、（乙）、（丙）三周期以及中西交食周期的雷同进行了探讨。     

浅水长波近似方程组的多孤波解、有理分式解

使用王明亮引进的齐次平衡法，求出了浅水长波近似方程组的Backlund变换以及它与热传导方程和二阶线性方程之间的Darboux变换，并借助于这些变换，获得了浅水长波近似方程组的多孤波解、有理分式解。推广了王明亮等人的结果。     

函数连分式的一个收敛定理及其应用

本文指出邹海著的《最优设计中的新计算法》中判定函数连分式收敛性的定理九是不正确的。建立了一个有别于前者的判别法,并由此重新给出三种最优设计的新计算方法。     

降水时间份额和降水强度分配比的取值分析

基于福建惠安和大亚湾两个厂址各两年的逐时降水数据进行统计,估算事故冲洗因子计算公式中的两个参数“降水时间份额FW”和“降水强度分配比ft”的数值,通过分析其取值为FWT=1．0,FW2=0．91,FW3=0．35和FW4=0．28;f1=0．60,f2=0．25和f3≥0．15。     

Photoresponse and carrier transport of protocrystalline silicon multilayer films

Alternating multilayer films of hydrogen diluted hydrogenated protocrystalline silicon (pc-Si:H) were prepared using a plasma-enhanced chemical vapor deposition technique.The microstructure of the deposited films and photoresponse characteristics of their Schottky diode structures were investigated by Raman scattering spectroscopy,Fourier transform infrared spectroscopy and photocurrent spectra.Microstructure and optical absorption analyses suggest that the prepared films were pc-Si:H multilayer films with a two-phase structure of silicon nanocrystals (NCs) and its amorphous counterpart and the band gap of the films showed a decreasing trend with increasing crystalline fraction.Photocurrent measurement revealed that silicon NCs facilitate the spatial separation of photo-generated carriers,effectively reduce the non-radiative recombination rate,and induce a photoresponse peak value shift towards the short-wavelength side with increasing crystallinity.However,the carrier traps near the surface defects of silicon NCs and their spatial carrier confinement result in a significant reduction of the diode photoresponse in the longwavelength region.An enhancement of the photoresponse from 350 to 1000 nm was observed when applying an increased bias voltage in the diode,showing a favorable carrier transport and an effective collection of photo-generated carriers was achieved.Both the spatial separation of the restricted electron-hole pairs in silicon NCs and the de-trapping of the carriers at their interface defects are responsible for the red-shift in photoresponse spectra and enhancement of external quantum efficiency.The results provide fundamental data for the carrier transport control of high-efficiency pc-Si:H solar cells.