梳状SIR腔体带通滤波器的设计

作者利用阶跃阻抗谐振器(SIR)作为谐振单元设计了一款小型化腔体梳状滤波器.利用CST软件进行结构仿真,得到优化尺寸,最后实验结果表明,相比与普通的梳状滤波器其尺寸明显的减小,同时满足工程需要的技术指标.     

三维Helmholtz方程在扰动的共轴波导上的解的存在唯一性

在允许导波存在的情况下,研究了三维Helmholtz方程在扰动的共轴波导上的解的存在唯一性。对扰动项和点源项的假设要求很少。首先,在知道三维齐次Helmholtz方程在无扰动的共轴波导的Green函数的基础上,引进了一个推广的Sommerfeld-Rellich辐射条件(输出辐射条件)。然后,证明了满足给定的辐射条件的三维Helmholtz方程在扰动的共轴波导上的解的存在性及唯一性。     

隧道中含有轴向漏泄电缆偶极子阻抗特性分析

为了分析隧道中偶极子阻抗,对隧道中含有轴向漏泄电缆的偶极子激励场特性进行分析,采用电动势法推导出隧道中偶极子阻抗计算公式,给出了漏泄电缆和偶极子不同位置时偶极子相对电阻的数值结果,得出如下结论:随着偶极子距离隧道壁越近,则偶极子阻抗越大;轴向漏泄电缆对径向电偶极子和横向磁偶极子的阻抗产生一定的影响,对横向电偶极子和径向磁偶极子阻抗无影响。     

Electrochemical energy storage application of CuO/CuO@Ni–CoMoO4·0.75H2O nanobelt arrays grown directly on Cu foam

Supercapacitors are attracting huge research interest because they are expected to achieve battery-level energy density, and they have a longer calendar life and shorter charging time. However, due to the out shell materials without contact extra freeway for charge transports, the out shell materials have still limited contribution to high capacitance for array structure at high rates. Here, CO/CO@Ni-CMO NBs were designed and synthesized on Cu foam substrates with CuO NBs as cores or extra freeway and Ni–CoMoO₄·0.75H₂O nanobelt as shell by an easily synthetic method. CuO NBs will provide electron “superhighways” and extra outside freeway for charge storage and delivery. Besides, the Ni doped CoMoO₄·0.75H₂O NBs are conducive to the electrical conductivity, and open space among these nanosheets can act as an “ion reservoir”, the increment of active sites and the contribution of capacitive effects. Finally, the CO@Ni-CMO NBs directly grown on Cu foam could avoid the “dead” volume caused by the tedious process of mixing active materials with polymer binders/conductive additives. As expected, the CO/CO@Ni-CMO NBs exhibited the high specific capacitance, the good rate performance and the excellent electrochemical stability.     

同轴腔变容管调谐振荡器

从体效应管、变容管的等效电路、特性．准确的参数表达式着手分析并、串振荡电路．根据管子参数、振荡频率能较准确地设计实用的压控振荡器．同时采用双变容管反向串联以增加调谐带宽，减少谐波，改善频谱．改善调谐线性．据此给出一个应用频段在５～９ＧＨｚ；调谐带宽＞１ＧＨｚ；输出功率＞１０ｍＷ；调谐速度＞１ＧＨｚ／ｕｓ； 主杂波比≥２５ｄＢ的宽带同轴压控振荡器实例．该振荡器已在数种电子对抗设备上长期稳定工作．