电力电子器件表面溅射膜的保护机理研究

本文研究了用直流硅靶溅射反应法制备的溅射膜的导电特性和表面屏蔽作用,得出低含氧气氛下(O_2/Ar<30%)生成的溅射膜是一种半绝缘性的含氧非晶硅.它用于电力电子器件表面作内层保护能屏蔽外界电荷,因而可以大幅度提高器件的耐压稳定性.     

非共沸混合工质膜状凝结小温差工况的研究

针对非共沸混合工质大空间膜状凝结小温差工况建立了一种新的解析模型，并以Ｒ２２／Ｒ１４２ｂ水平管外凝结为对象进行分析求解，理论计算重现了实验研究中出现的某些小温差工况下凝结换热恶化异常严重的现象，经过分析提出：“在混合蒸汽沿凝结物面方向的运动可以忽略的场合，非共沸混合工质凝结换热所需的最小温差等于此混合工质在相应组分浓度下的露泡点温差”的观点。     

二元周期序列的计数

以组合计数理论为基础，推导出特殊序列（自互反序列和自互补序列）计数公式和排除等价序列（互反、互补序列）后的本原周期序列计数公式，使搜寻可用序列的基序列数目约缩为原来的１／４，进一步，应用Ｓｔｉｒｌｉｎｇ浙近公式求出当周期较大时各种特殊序列数目的的比例关系，所导出的公式不仅完善了公用控制的设计理论，而且使长周期可用序列的搜寻工作量减少到近１／４。     

泛邻元结构公理刻画的深入探讨

对汪培庄提出的泛邻元结构的公理刻画进行了化简，给出了Ｌ上的Ｒ－泛邻元结构公理刻画的定义，同时还给出了低一个层次的Ｘ上的Ｒ－泛邻元结构公理刻画的定义，证明了这２种结构能够依提升和限制相互唯一确定，并且能够与Ｘ上的Ｒ－开元系一一对应。     

关于双星系统的能量

本文利用广义相对论理论中的后牛顿近似结果，计算出双星系统的伴星的总能量．     

Au/(C/SiO2)/p-Si结构中的电流输运机理研究

采用射频磁控溅射方法制备了镶嵌纳米碳粒的SiO2薄膜，利用Au／（C／SiO2）／p-Si结构的I-V特性曲线，对其电流输运机理进行了分析．结果表明，正向偏压较小时，薄膜中的电流符合欧姆电流输运机制；正向偏压较大时，薄膜中的电流主要是Schottky发射和Frenkel-Poole发射2种电流输运机制的共同作用结果．这一结论与样品的EL（electroluminescence）是由SiO2中的发光中心引起的结论相一致．     

The k-Error Linear Complexity and the Linear Complexity for pq^n-Periodic Binary Sequences

The k-error linear complexity and the linear complexity of the keystream of a stream cipher are two important standards to scale the randomness of the key stream. For a pq^n-periodic binary sequences where p, q are two odd primes satisfying that 2 is a primitive root module p and q^2 and gcd（p-1, q-1） = 2, we analyze the relationship between the linear complexity and the minimum value k for which the k-error linear complexity is strictly less than the linear complexity.     

A New Method for the Detections of Multiple Faults Using Binary Decision Diagrams

With the complexity of integrated circuits is continually increasing, a local defect in circuits may cause multiple faults. The behavior of a digital circuit with a multiple fault may significantly differ from that of a single fault. A new method for the detection of multiple faults in digital circuits is presented in this paper, the method is based on binary decision diagram （BDD）. First of all, the BDDs for the normal circuit and faulty circuit are built respectively. Secondly, a test BDD is obtained by the XOR operation of the BDDs corresponds to normal circuit and faulty circuit. In the test BDD, each input assignment that leads to the leaf node labeled 1 is a test vector of multiple faults. Therefore, the test set of multiple faults is generated by searching for the type of input assignments in the test BDD. Experimental results on some digital circuits show the feasibility of the approach presented in this paper.     

Ag溅射参数对FePt/Ag薄膜取向生长的影响

采用有交互作用的正交实验方法对磁控溅射法在玻璃基片上制备FePt/Ag纳米双层膜Ag底层的溅射参数进行研究.通过直观分析,方差分析和XRD图分析,可以选出Ag底层诱导FePt层取向生长的最佳溅射条件,为FePt磁性层性能的进一步研究应用奠定了基础.