An Improved Model of Attack Probability Prediction System

This paper presents a novel probability generation algorithm to predict attacks from an insider who exploits known system vulnerabilities through executing authorized operations. It is different from most intrusion detection systems （IDSs） because these IDSs are inefficient to resolve threat from authorized insiders. To deter cracker activities, this paper introduces an improved structure of augmented attack tree and a notion of ＂minimal attack tree＂, and proposes a new generation algorithm of minimal attack tree. We can provide a quantitative approach to help system administrators make sound decision.     

Development of novel and sensitive sensors based on microcantilever of atomic force microscope

Recently, the development of sensors based on microfabricated cantilevers of atomic force microscope (AFM) has attracted considerable attention from the designers of novel physical, chemical, and biological sensors. Many kinds of sensors have been developed taking the advantages of its high-resolution imaging, force measurement and force sensitivity, such as immunosensor and DNA biosensor and the sensors for detection of intermolecular interaction. This paper reviews the progress made in this field and discusses the signal transfer principles by which the design of the sensors is achieved.     

Application of Nanometer-Size Titanium Dioxide in Extreme-Trace V（Ⅴ） Analysis

0Introduction Vanadiumplaysanimportantroleinmodernindustry,es peciallyinsteelandchemicalindustry.Forinstance,itscompoundsarewidelyappliedintheproceduresofvitrioland petroleumchemicalmanufactureascatalyzers[14].Vanadium hasseveralvalences,butgenerallyitslowvalencesturnintohighoneseasilyinenvironment[5].BecauseV(Ⅴ)isthemost stableandpoisonousone,weoftenlayemphasisonitinenvi ronmentalpollutioncontrol.Vanadiumexistsinenvironmentalwaterwithextremelylowconcentration.Inseawateritscontentislessthan…     

Al-Mg-Si合金相界面的键特征与强化作用

对Al-Mg-Si合金中主要析出相β(Mg2Si)以及纯硅晶胞的键电子密度计算,结果表明硅晶胞中最强的Si-Si键nA比β(Mg2Si)相的Mg-Si最强键nA要强2倍,相应的最强键密度ρ也大2倍,这是影响Mg2Si颗粒的生长以及合金的硬度和强度等力学性能的重要原因.     

低温下金属热膨胀系数的同位素效应

以Cu为例，在考虑德拜温度随温度，原子质量变化后，利用统计物理理论对低温下的金属热膨胀系数及其同位素效应进行了定量的探讨，结果表明；同位素各组分含量对金属热膨胀系数的影响随温度，组分含量而变化，该变化可以定理求出；温度较低时变化较快，较高时较慢。     

原子指数与镧系离子理化性质的相关性研究

原子指数G定义式为G=ni ∑eij/√-1 mi,G不仅对3价镧系离子Ln^3 实现唯一性表征，而且与其6种理化性质显相关，特别是与Ln^3 离子的离子半径、水化能的相关系数高达0.9994、0.9962，本方法还具有计算简单、应用方便等优点。     

激光原子法同位素分离中三维原子分布函数的计算

在激光同位素分离中 ,激光作用区内原子的密度和速度分布对分离过程有重要影响。目前 ,理论上对这个问题的研究还都限于二维情形。该文根据激光同位素分离装置中激光作用区原子密度较低的特点 ,在忽略原子碰撞的条件下给出了一种计算三维空间内原子速度分布函数的方法。利用该方法对小尺度蒸发实验进行计算所获得的结果在定性和定量上都与实验测量符合的很好。     

Theoretical calculations on the atomic and electronic structure of β-SiC(110) surface

We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of β-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semiconductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp²-like bonding situation with its three N neighbors and the N atom tends to a p³-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting characterization.     

火焰原子吸收光谱法测定Mn3O4 产品中钙镁含量

用盐酸加热溶解四氧化三锰样品, 加入镧盐和锶盐混合释放剂, 消除70%左右基体锰的干扰, 直接测定其中钙、镁含量, 样品加标回收率为96.8%~ 98.2%,相对标准偏差为2.4%~3.2%.