平面汞膜电极恒电位阳极溶出极限电流方程式的推导和实验验证

本文推导出膜电极恒电位阳极溶出极限电流方程式,以平面厚汞膜电极对该式进行了实验验证。实验结果与理论式基本相符。     

Fabrication and Application of High Quality Diamond-coated Tools

Diamond-coated tools were fabricated using Co-cemented carbide inserts as substrates by the electronically aided hot filament chemical vapor deposition (EACVD). An amount of additive in an acid solution was used to promote the Co etching of the substrate surface. The surface of the WC-Co substrate was decarburized by microwave plasma with Ar-H 2 gas. Effect of the new substrate pretreatment on the adhesion of diamond films was investigated. A boron-doped solution was brushed on the tool surface to diffuse ...     

磁性薄膜热力学性质的变分累计展开研究

采用变分累计展开 (简称VCE)方法研究了量子Heisenberg薄膜 ,计算了内能和比热的累积展开 从三级累积展开的结果 ,发现在临界约化温度处内能不连续 ,一级除外 ;而比热到三级都是不连续的 .     

非晶硒化镉超快光电探测器瞬态响应

报道淀积条件对以非晶态硒化镉（ａ－ＣｄＳｅ）为光敏介质的超快光电探测器瞬态响应特性的影响．     

苹果功能塑膜袋的研究与应用

在聚乙烯树脂中，加入光转换剂、抗氧化剂和紫外线吸收剂等塑料添加剂，吹塑成用于苹果套袋栽培的功能性塑膜袋．结果表明，该袋改善了普通塑膜袋的老化破裂问题。同时具有增产、增色、防病虫害和防农药污染的优点．     

GDX—硅胶混合薄层色谱板的效率和定量性能

对用ＧＤＸ－１０２－硅胶Ｇ、有机粘合剂研制出的混合薄层板进行性能测试，评价了其在硝基苯胺异构体、酸性食品染料分离测试方面的应用，得到好的结果。     

射频溅射金属前驱体硫化法制备的Cu2ZnSnS4薄膜

采用射频溅射技术沉积Cu／Sn／Zn金属前驱体叠层结合硫化技术在玻璃衬底上成功制备了Cu2ZnSnS4薄膜。X-射线衍射分析表明，通过优化制备条件可以获得单一黝锡矿结构且具有（221）择优取向的Cu2ZnSnS4薄膜。霍尔效应和紫外可见透过谱测量表明，样品的薄膜电阻、吸收系数和光学带隙分别达到0．073Ω·cm，10^4cm^-1和1．53eV，具有适合作为薄膜太阳电池吸收层应用的可能性。     

软土中薄硬夹层的夯扩桩工程实践

结合工程实践对夯扩桩在软土中薄硬夹层的应用进行了探讨,提出薄硬夹层作为桩端持力层的加固方法.     

Preparation and properties of the SmOx/Rh(100) model surface

The preparation of SmOx/Rh(100) and CO adsorption on this model surface have been investigated with Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption spectroscopy (TDS). The oxygen adsorption on the SmRh alloy surface leads to the aggregation of Sm on the surface. The thermal treatment of this oxidized surface induces the further agglomeration of SmOx on the Rh(100) surface. Compared with CO TDS on the clean Rh(100) surface, three additional CO desorption peaks can be observed at 176, 331 and 600 K on the SmOx/Rh(100) surface. The CO desorption peak at 176 K may originate from CO adsorbed on SmOx islands, while the appearance of the CO adsorption peaks at 331 and 600 K, depending on the oxidation state of Sm, is attributed to CO species located at the interface of SmOx/Rh(100).     

Preparation of organic thin-film field effect transistor

The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as di-electric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50 μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layerwere prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10ˉ6 cm2/(V@s), and the on/off current ratio reached 500.