加热处理镁铝榴石的晶体化学研究

通过应用XRD,IR和MS谱对加热过程中的一个紫红色含铬镁铝榴石样品作了研究,结果表明,在1000℃时,镁铝榴石转化为辉石和非晶态的Al_2O_3,但在加热只达800℃的过程中,其十二面体中的Fe~(2+)逐渐氧化为Fe~(3+),并与四面体中原有的Fe~(3+)和八面体中的Al~(3+)一同析出。从而得出,在镁铝榴石结晶过程中,高温有利于Fe~(3+)和Cr~(3+)取代Al~(3+)进入八面体,但却不利于Fe~(3+)进入四面体。这一结论对重新认识镁铝榴石在金刚石找矿方面的标志特征具有十分重要的意义。     

氦原子电子激发跃迁的绝对广义振子强度测量

在2．5keV碰撞能量下，采用改进后的高能量角分辨的电子能量损失谱仪，我们测量了作为能量损失E和动量转移K函数的氮原子1s1s→1s2s，1s1s→1s2p电子激发跃迁的绝对广义振子强度(GOSs)，GOS实验数据同Kim及Inokuti的基于第一玻恩近似的理论计算符合得非常好．     

光电子能谱在钒酸钇晶体生长中的应用

应用光电子能谱分析了钒酸钇（YVO4）多晶斜与单晶之间的关系，成功生长出低缺陷的YVO4晶体，并对晶体进行检测。由检测结果得出，YVO4晶体的小角晶界，散射中心等缺陷与多晶斜的Y,V质量比有密切的关系，晶体的外形变形、与晶体温度场关系较大。     

EIS在医用钛合金表面改性研究中的应用

介绍了电化学阻抗谱(EIS)在医用钛合金表面改性研究中的应用,包括对表面惰性层和表面活性层的评价方法,并系统地概述了解析其等效电路的双层结构物理模型.     

裂解气相色谱质谱法研究甲壳素裂解作用

于400-570℃之间，对甲壳素进行热裂解作用，用气相色谱质谱仪鉴别裂解产物．随裂解温度上升，裂解产物急剧增加．在570℃时，出现57个色谱峰，鉴定了其中55种裂解产物，主要裂解产物为醛、酮、酸和酯类、杂环化合物和糖类化合物等．甲基-N-（乙酰基）-D-葡糖胺等是甲壳素的特歹正性裂解产物．甲壳素裂解过程中，发生链剪切作用，聚合物链断裂．经过分子重排，环化，次级反应等形成了各种裂解产物．     

采用近红外漫反射光谱法分析牛奶成分

为提高牛奶成分化学分析的效率，研究了近红外漫反射光谱在牛奶主要成分分析中的应用；讨论了光在牛奶中的传播方式和相关测量方法的选择；采用偏最小二乘(PLS)建立校正模型，比较了各种预处理方法和不同谱区的建模效果，其中脂肪的相关系数为0．99，标准偏差为0．048 g/dL，蛋白质的相关系数为0．92，标准偏差为0．102g/dL结果表明，近红外漫反射光谱测量可以满足牛奶主要成分的测量要求。     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.     

Chemical states of the atoms in magnetic multilayers Ta/NiO x /Ni81Fe19/Ta and Co/AlO x /Co

Ta/NiO _x /Ni₈₁Fe₁₉/Ta and Co/AlO _x /Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H _ex) and the coercivity (H _c) of NiO _x /Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and chemical states at the interface region of NiO _x /NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O₂ is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO _x is antiferromagnetic NiO and the corresponding H_ex is the largest. As the ratio of Ar/O₂ deviates from 7, the H _ex will decrease due to the presence of magnetic impurities such as Ni⁺³ or metallic Ni at the interface region of NiO _x /NiFe, while the H _c will increase due to the metallic Ni. Al layers in Co/AlO _x /Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AlO _x was 1.2 nm.