在Si（111）上外延生长硅化钴薄膜的SEM和XPS研究

利用质量分离低能离子束外延法,在Ｓｉ（１１１）上生长出了硅化钴薄膜,表面微结构及表面组分,化学价态的分析测试表明,此生长工艺已获得了无针孔的高品质单晶硅化钴薄膜。通过反应外延后做后退火和不做后退火样品的对比测试的结果,对这一薄膜生长的机理进行了探讨分析。     

Relationship between luminescence and matrices in the system A12O3-B2O3-Ce2O3

The system Al₂O₃-B₂O₃-Ce₂O₃, with Al/B ratio varying from 4.5 to 2 and Ce/(Al+B) = 0.02, has been prepared at the temperature from 1 200 to 1 400°C. Relationship between luminescence and matrices in the system Al₂O₃-B₂O₃-Ce₂O₃ was investigated. It was found that some changes of the matrices occurred with Al/B ratio varying from 4.5 to 2. These results lead to a great change in luminescence properties, indicating variation of Ce-surroundings of crystal field. With the decrease of the ratio from 3 to 2, the excitation and emission peaks shift to shorter wavelengths. It was also found that a new type of rare earth luminescent materials was obtained with appropriate Al/B ratio.     

Relationship between luminescence and matrices in the system Al_2O_3-B_2O_3-C_2O_3

The system Al-2O-3-B-2O-3-Ce-2O-3, with Al/B ratio varying from 4.5 to 2 and Ce/(Al+B)=0.02, has been prepared at the temperature from 1 200 to 1 400℃. Relationship between luminescence and matrices in the system Al-2O-3-B-2O-3-Ce-2O-3 was investigated. It was found that some changes of the matrices occurred with Al/B ratio varying from 4.5 to 2. These results lead to a great change in luminescence properties, indicating variation of Ce-surroundings of crystal field. With the decrease of the ratio from 3 to 2, the excitation and emission peaks shift to shorter wavelengths. It was also found that a new type of rare earth luminescent materials was obtained with appropriate Al/B ratio.     

TZP陶瓷的X－射线定量相分析

采用Ｘ－射线衍射方法研究了四方相氧化锆多晶（ＴＺＰ）陶瓷中的物相，提出了应用四方相氧化锆（Ｔ－ＺｒＯ２）双谱线峰强度比Ｉ（２００）／Ｉ（００２），计算ＴＺＰ陶瓷中立方相氧化锆（Ｃ－ＺｒＯ２）含量的Ｘ－射线定量相分析方法．通过力学性能测试进一步验证了Ｃ－ＺｒＯ２的存在对ＴＺＰ陶瓷断裂韧性Ｋ１ｃ和抗折强度的影响．     

用X射线密度计测定木材年轮的含水率分布

用Ｘ射线扫描密度计测量气干材含水率及其每一年轮的水分分布。并与干燥法进行对比，其含水率测量误差在２％左右。对Ｘ射线扫描密度计测水分的原理与影响测试精度的主要因素也进行斩讨论。     

热处理对电沉积CdSe薄膜光电性能的影响

电沉积制备的CdSe薄膜经不同温度退火之后由光电化学测定和x射线衍射实验进行表征,发现随着退火温度的上升,CdSe电极的光电转换效率提高,半导体薄膜中掺杂浓度略有减小,而少子扩散长度明显增大、薄膜中的CdSe微晶呈一定择优取向的六方纤锌矿晶体桔构,且含少量六方晶型的Se,在440℃以下退火时CdSe晶型没有改变,但退火温度升高使其晶粒尺寸增大,同时Se的含量减少,讨论了薄膜光电性能与结晶学性质的关系。