Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.     

光声气体检测系统中半导体激光器的波长调制

在光声光谱法气体检测中,因为激光器发光波长需与待测气体吸收峰严格匹配,所以需对激光器波长精确调谐.由于半导体激光器发光的波长与温度、驱动电流间有确定的关系,采用波长调制的方法,在一定精度的温度控制下,对波长进行扫描,可确保激光器驱动信号在一个周期内能够产生稳定的光声信号.实验表明,该方案能满足光声气体检测系统的要求.     

半导体器件非线性系统的人工粘性有限元解法

文中采用有限元方法对动力模型进行了数值仿真.首先推导出动力模型的数学模型,即一非线性偏微分方程组,然后给出了对应于偏微分方程组的变分问题.为了对变分问题进行数值求解,应用有限元方法得到了对应的非线性方程组.由于动力模型的强非线性性,在数值求解中采用了人工粘性技术,根据动力模型偏微分方程组的具体特征,提出了具体的人工粘性方法.最后分别通过一维的n -n-n 硅二极管和二维的 GaAs MESFET算例,验证了算法的有效性.     

二极管双向限幅电路的实验研究

本文研究了二极管双向限幅电路、二极管双向限幅电路中VD2反向的实验电路、二极管双向限幅电路中VD1反向的实验电路和二极管双向限幅电路中VD1、VD2均反向的实验电路四种电路结构,分析了当输入正弦波电压时,上述四种电路的输出波形,并给出实验实测波形,实验结果验证了理论分析。     

半导体激光器端面反射率的优化

本文从半导体激光器的速率方程组出发,分析了半导体激光器端面反射率的变化对其输出光功率的关系。数值计算表明,在对半导体激光器端面反射率进行优化后,能够获得最佳输出功率。此外,还分析了端面反射率优化后对半导体激光器微分功率特性的影响。     

纳米Bi2WO6空心球的制备及光学性能

以Na2WO4·2H2O和Bi(NO3)3·5H2O为原料,PVP(聚乙烯吡咯烷酮)和NaOH为添加剂,乙醇、冰乙酸和去离子水的混合溶液为溶剂,使用水热法制备出空心球状Bi2WO6纳米结构.采用XRD、SEM、TEM和UV-vis吸收光谱分析等手段对纳米Bi2WO6空心球进行了表征.结果表明:纳米Bi2WO6空心球的生长过程符合成核-溶解-再结晶的机制;NaOH和PVP的浓度对最终纳米空心球的形成起了关键性的作用.     

A High Efficiency Wavelength Conversion Scheme Based on Four Wave Minxing in a Semiconductor Optical Amplifier

A new approach of all optical wavelength converter based on four wave mixing (FWM) in a semiconductor optical amplifier (SOA) with the conjugate wave reflected by a fiber Bragg grating (FBG) and then amplified by the SOA is reported. By adjusting the pump power, the conversion efficiency could be improved 7～10dB with signal-to-background-noise-ratio (SBR) deteriorated 1～2dB, compared with traditional single pump four wave mixing.     

半导体中深能级的磁光关联效应

本文以掺金硅为样品,研究了在光注入时磁场对样品中深能级的影响,以及磁场方向改变对深能级的影响等问题,并在理论上对这些问题加以探讨.     

BCN非晶形成机理的实验研究

以六方ＢＮ和石墨粉为原料,通过机械球磨的方法制备出ＢＣＮ非晶粉,对ＢＣＮ非晶的成键状态和形成机理进行了实验研究。