HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.     

pH Dependence of Chlorophyll States, Protein Structures and Function of the PSII Membranes

IntroductionPhotosystem II ( PSII) is a pigment- proteincomplex in the thylakoid membrane. Its reactioncenter( PSII- RC) ,which is composed of D1 andD2 proteins,generates the highly positive oxidantrequired for the oxidation of water by light- drivencharge separation. Water oxidation occurs at theMn4cluster positioned atthe center of the oxygen-evolving complex on the lumenal surface of PSII.In green plants,the highly reactive Mn4cluster isshielded by a number of extrinsic proteins( 33…     

Shakedown Analysis of 3-D Structures Using the Boundary Element Method Based on the Static Theorem

The static shakedown theorem was reformulated for the boundary element method (BEM) rather than the finite element method with Melan‘s theorem, then used to develop a numerical solution procedure for shakedown analysis. The self-equilibrium stress field was constructed by a linear combination of several basis self-equilibrium stress fields with undetermined parameters. These basis self-equilibrium stress fields were expressed as elastic responses of the body to imposed permanent strains obtained using a 3-D BEM elastic-plastic incremental analysis. The lower bound for the shakedown load was obtained from a series of nonlinear mathematical programming problems solved using the Complex method. Numerical examples verified the precision of the present method.     

玉米淀粉与丙烯酸胺接枝共聚物的制备

本文研究玉米淀粉与丙烯酰胺接枝共聚物的合成工艺及其在造纸工艺中用作干强剂、助留/助滤剂的效果。研究表明玉米淀粉与丙烯酰胺的质量比为5:3.5,引发剂硝酸铈铵用量为0.2g,反应时间为3h,反应温度为62℃,聚合物质量较好。     

光滑流形在(Z2)2作用下信息为{(2,2,0),(2,0,2),(0,2,2)}的上协边类

设(Z2)^2作用于光滑闭流形M^n，其不动点集的法丛的信息为P＝{(2，2，0)，(2，0，2)，(0，2，2)}，Jn^4，2(P)是有代表元M^n且具有上述性质的n维上协边类[M^n]构成的集合．作者通过构造上协边环M0n的一组生成元决定了Jn^4，2(P)的群结构．     

过采样∑-△ADC的原理及单片机实现方法

论述了过采样 Σ- ΔADC的基本原理及结构 ,分析了 Σ- Δ调制器的频域传输特性和系统的信噪比 ,给出了实现不同的 A/D转换精度必须满足的条件和用单片机实现 Σ- ΔADC的具体方法和电路 .实际使用表明 ,该方法测量结果可靠 ,具有实用价值     

2-氨基-3-氰基-4-(2’,4’-二氯苯基)-4H-萘并[1,2-b]吡喃的合成和晶体结构

标题化合物C22H17Cl2NO3的晶体由α-乙氧羰基-2,4-二氯肉桂腈、β-萘酚在TEBA存在下合成并经DMF与水的混合溶剂重结晶而得.其结构通过元素分析、IR和1HNMR进行了表征,用X射线单晶衍射法测定了该化合物的晶体结构.结果表明,晶体属于单斜晶系,P21/n空间群。a=1.450 5(2)nm,b=0.903 7(1)nm,c=1.491 3(2)nm,α=90°,β=101.21(1)°,γ=90°,Mr=414.27,V=1.917 5(4)nm3,Dc=1.435 g·cm-3,Z=4,μ(MoKα)=0.362 mm-1,F(000)=856.晶体结构用直接法解出,经全矩阵最小二乘法修正,最终偏离因子R=0.044 44,Rw=0.117 7.化合物分子中,原子C(1),C(2),C(3),C(4),C(5)和O(1)形成一个六元环,该六元环中C(1)-C(2)键长为0.134 6(3)nm,表明为双键.此六元环为船式构象.     

Bi含量对SrBi4Ti4O15铁电材料性能的影响

~~Bi含量对SrBi_4Ti_4O_(15)铁电材料性能的影响@朱骏$扬州大学物理科学与技术学院!江苏扬州,225002 @毛翔宇$扬州大学物理科学与技术学院!江苏扬州,225002 @卢网平$扬州大学物理科学与技术学院!江苏扬州,225002 @惠荣$扬州大学物理科学与技术学院!江苏扬州,225002 @陆文峰$扬州大学物理科学与技术学院!江苏扬州,225002 @陈小兵$扬州大学物理科学与技术学院!江苏扬州,225002~~~~~~~~     

基于IP的主动测量协议IPMP

目前广泛使用的主动测量技术，大部分都是基于ICMP，TCP或UDP协议进行测量的，从而导致相关测量工具存在局限性。IPMP协议的设计目的就是为多种测量机制提供底层协议支持，在路由器的协助下，它可以实现对单向时延和链路瓶颈等网络参数的精确测量。首先介绍了IPMP的原理，讨论了它目前存在的问题，并提出了改进方法。     

基于C/S结构的中小型市长热线坐席系统的开发

设计了基于客户机／服务器体系结构的市长热线坐席系统，给出了总体设计方案，包括坐席与客户呼叫管理之间消息的交互及系统模块，介绍了系统所采用的软件平台和基本技术，阐述了系统具有的特色。