一维扩展Hubbard模型在强耦合极限下的磁化率

本文在强耦合极限下,讨论了一维扩展Hubbard模型的磁化率性质,并得到铁磁性、反铁磁性和顺磁性在此模型中都可能出现的结论。特别是在磁化率的表达式中出现了相当于有两种点阵存在时的交换积分J_1和J_2,而此模型只考虑了一种点阵。     

磁场强度仅与传导电流有关的条件

以静磁场的基本方程为基础，利用矢量分析的有关知识对磁场强度H的一般形式作一些理论分析，给出磁场强度日仅与传导电流有关的条件．     

一氧化氮与心肌再灌注损伤

一氧化氮（NO）是一种生物信息递质，广泛存在于各种细胞和组织中，具有减少血小板聚集、抑制、嗜中性粒细胞聚集等功能。NF－KB被认为是近十年最有研究潜力的调节免疫反应、应激反应、凋亡和炎症的核转录因子。充分认识一氧化氮、NF－KB与心肌再灌注损伤的机制。为对其进一步研究提供理论依据。     

建立麦克斯韦方程组的新途径

用普通物理学的方法推导了不同惯性系之间产场量的变换式，在此基础上，给出了一咱简便、快捷并且物理意义清晰的建立麦克斯韦方程组的新途径。     

Numerical modeling and simulation of temperature distribution uncertainty subject to ferromagnetic thermoseeds hyperthermia

In the process of ferromagnetic thermoseeds mediated magnetic induction hyperthermia, the tempera- ture distribution in the tumor region is a key factor to determine the therapy effect. During the preoperative treatment planning, discrepancies of the treatment parameters may lead to the temperature distribution uncertainty within the target area. Inaccurate prediction of temperature distribution may induce the treatment failure; therefore, it would be significant to investigate the uncertainty of tissue temperature prediction caused by the disturbance of calculation parameters. In this paper, 3D temperature field and necrosis zone of tissues in ferromagnetic thermoseeds hyperthermia are simulated by the finite volume algorithm, and effects of parameter uncertainties on the temperature distribution are revealed. Results show that selecting appropriate magnetic field parameters for treatment is a priority to guarantee therapeutic effect. Thermoseed properties and blood perfusion rate are the obvious disturbing terms for temperature distribution, while the metabolic heat of bio-tissues can often be ignored within limits. Our investigation is of importance for guiding reasonable and optimal preoperative treatment planning.     

12 A Gev的α粒子在G5乳胶中的多重散射测量

本文把Williams的多重散射理论用到乳胶技术中,讨论了相对论双电荷粒子在G5乳胶中的多重散射。对各种实验条件下的散射常数及散射偏差进行了评述,当单元长为10—104um时,散射常数的变化范围是20.9≤K=K_∞≤31.0。同时给出利用MBH—8M显微镜测量的12A Gev的a粒子在G5乳胶中的多重散射.     

核Drell-Yan过程和混合重标度模型

利用混合重标度模型计算铁核与氘核的Ｄｒｅｌ－Ｙａｎ截面比随ｘＦ的变化，计算结果与实验符合较好     

Structure and magnetic properties of Ni50Mn35In15 thin film

Thin film of Ni50Mn35In15 Heusler alloy was prepared on Mg O(001) substrate by epitaxial growth in an ultra-high vacuum(UHV) chamber by a Pulsed Laser Deposition(PLD) method. The epitaxial growth process was monitored by in situ reflection high energy electron diffraction(RHEED) and the structure of the film was checked by ex situ X-ray diffraction(XRD), which indicates that high quality Ni50Mn35In15 single crystal film with a face-centered-cubic(fcc) structure could be stabilized on Mg O(001). Magnetic property measurement was also conducted at various temperatures by using physical property measurement system(PPMS). A significant exchange bias was observed for Ni50Mn35In15 film,and the strength of the exchange bias field(HEB) increases with the decrease of temperature. Such a behavior can be ascribed to the fact that the interfacial spin interaction between ferromagnetic(FM) and antiferromagnetic(AFM) cluster is enhanced with the decrease of temperature.     

Magnetoelectric Bi_(3.15)Nd_(0.85)Ti_3O_(12)–NiFe_2O_4 bilayer films derived by a SOL–GEL method

Magnetoelectric Bi3.15Nd0.85Ti3O12–NiFe2O4(BNT–NFO) bilayer films were deposited on Pt/Ti/SiO2/Si(100) substrates by a simple SOL–GEL method and spin-coating process with different growth sequences of BNT and NFO yielding the following layered structures: BNT/NFO/substrate(BNS) and NFO/BNT/substrate(NBS). Such heterostructures present simultaneously strong ferroelectric and ferromagnetic responses,as well as magnetoelectric effects at room temperature. BNS thinfilms showed larger ME voltage coefficient than NBS films, revealing that the layer sequences have a significant in fluence on the magnetoelectric coupling behavior of these bilayer structures, which may be caused by a interfacial effect.     

储罐罐壁缺陷的低速漏磁检测研究

针对储罐罐壁缺陷的漏磁检测,做出速度效应分析,研究了不同速度时,以及低速时各缺陷的漏磁检测效果。通过速度效应的理论分析,再利用有限元仿真软件分析磁滞后效应与涡流效应,发现缺陷的低速检测结果是可以通过软件模拟的;同时可忽略涡流效应。模拟分析了不同缺陷的低速漏磁检测结果,并得到了很好的结果曲线。最后通过实验证明:4 m/min的速度具有很好的漏磁检测效果。