Fabrication and superconducting properties of nano-SiC doped MgB2 tapes

Nano-SiC doped MgB2 tapes were prepared by the in situ powder-in-tube method. Heat treatment was performed at 650℃ for 1 h. XRD data indicate that SiC particles had reacted with the MgB2 during sintering process. MgB2 core seemed to be denser after SiC doping, and the critical temperature was slightly depressed. The critical current density Jc of the SiC doped tapes was significantly enhanced in magnetic fields up to 14 T compared to the undoped ones. For the 5% SiC doped samples, Jc was in- creased by a factor of 32 at 4.2 K, 10 T. The enhancement of Jc-B properties in SiC doped MgB2 tapes is considered to be due to the enhancement of grain linkages and the introduction of effective flux pining centers. The substitution of B by C in MgB2 grains is thought to be the main reason for the improve- ment of the flux pinning ability in SiC doped MgB2 tapes.     

Effect of Yb2O3 doping on the grain boundary of NiFe2O4–10NiO-based cermets after sintering

xYb2O3–15(20Ni–Cu)/(85?x)(NiFe2O4–10NiO) (x=0, 0.25, 0.5, 0.75, 1.0, 2.0, and 10.0) cermets for aluminum electrolysis were prepared to investigate the effect of Yb2O3 doping on the grain boundary of the cermets after sintering. The results showed that each interface was very clear and that with increasing Yb2O3 content, most of the Yb was evenly distributed at the grain boundary. Moreover, according to the phase composition and microstructural analysis by X-ray diffraction (XRD), scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDX), and electron probe microanalysis (EPMA), YbFeO3 was produced along the grain boundary. The YbFeO3 was concluded to not only have formed from the interaction between the NiFe2O4 or Fe2O3 component and Yb2O3 at the grain boundary of the cermets, but also from the decomposition of NiFe2O4 into NiO and Fe2O3 and the subsequent reaction of Fe2O3 with Yb2O3. Thus, the pro-duction of YbFeO3 resulted in a cermet with high relative density, good electrical conductivity, and good corrosion resistance.     

掺杂Gd对铕配合物Eu_xGd_(1-x)(TTA)_3(TPPO)_2绝对量子效率和荧光寿命的影响

掺杂不同比例的Gd到铕配合物中得到一系列共发光稀土配合物EuxGd1-x(TTA)3(TPPO)2。这些稀土配合物相似的红外光谱表明掺杂Gd前后的稀土配合物具有类似的分子结构。激发光谱表明所有稀土配合物的最大激发波长都在366 nm附近。绝对量子效率和荧光寿命随着Gd含量的变化呈准周期性变化,同时绝对量子效率和荧光寿命的变化趋势恰好相反,说明了稀土配合物吸收能量后尽快地将能量转化为光能释放出去有利于绝对量子效率的提高。     

Bi~(3+)掺杂对YAG:Ce~(3+)荧光粉发光性能的影响

Bi 3+掺杂YAG:Ce3+荧光粉由溶胶凝胶法合成.结构和结晶过程分析表明,其结晶程度良好.光谱分析表明,Bi 3+的掺杂可以使Ce3+的荧光峰位红移.Ce3+的荧光强度随Bi 3+掺杂浓度的增加而增加,这是由Bi 3+与Ce3+之间的能量传递引起的.之后随着掺杂浓度的继续增加Ce3+的荧光强度减小,这是由浓度猝灭所致.     

掺杂预合成添加剂对氧化锌压敏电阻性能影响

为了提高氧化锌(ZnO)压敏电阻的电学性能,采用常规烧结并在ZnO压敏电阻中掺杂预先合成的BiSbO₄和Zn₂SiO₄,研究不同掺杂比例对ZnO压敏电阻的微观结构、电学性能、通流能力的影响.结果表明:ZnO压敏电阻在掺杂BiSbO₄和Zn₂SiO₄后,能够有效抑制ZnO晶粒变大,晶体结构变得致密均匀,致密性有所提高,有效提高压敏特性和通流能力.BiSbO₄和Zn₂SiO₄掺杂比例为3∶1的样品综合性能比较优异,样品的致密度为5.58 g·cm^-3,压敏电位梯度达到425 V·mm^-1,非线性系数为70,漏电流为1.2×10^-7 A·cm^-2,能量耐受能力达到334.21 J·cm^-3,残压比为2.5.     

基于小波变换的心室晚电位检测

采用改进的小波变换对２８例信号平均心电图进行小波分析，得出其频谱标测图，并计算了晚电位检测的一种定量标准———正常因子．研究结果表明，利用小波变换分析晚电位是一种较好的方法，按照正常因子标准，２８例信号平均心电图中包含的６例晚电位阳性全部检出，且没有错检，说明其检测的准确性很高     

Eu-Ru共掺NiO-SnO2复合纳米粒子薄膜的阻变特性

通过低温水浴法制备了Eu-Ru共掺杂NiO-SnO2复合纳米粒子，透射电镜图像显示纳米粒子粒径均匀，选区电子衍射表明结晶性差，所测晶面间距与SnO2和NiO相应卡片数据一致，水热机理分析表明纳米粒子由NiO-SnO2微观p-n结组成.原子力显微镜测试薄膜表面平均粗糙度约025nm，由于薄膜太薄及样品结晶性差，XRD分析未见明显衍射峰.电学测试表明纳米粒子薄膜具有可重复双极阻变特性，阈值电压约1V，开关比约500.薄膜高阻态电学输运符合缺陷俘获载流子所致空间电荷限制导电机制，低阻态呈欧姆特性，故阻变机理应为电荷俘获及再释.     

非晶态MoS_3制备方法的改进与其电化学特性的研究

本文报导了用改进的水溶液酸化沉淀法制备非晶态三硫化钼。并对该材料的导电特性、用作锂电池阴极材料的放电特性以及循环伏安特性进行了研究。     

ZnCr2O4湿敏陶瓷工艺研究

研究了ZnO不同含量对ZnCr2O4湿敏陶瓷线性度及LiCl,Al2O3,CaCO3掺杂对湿阻特性的影响。实验表明：增加ZnO的含量，可提高湿敏陶瓷的线性度；加入Ca^2 可提高湿敏陶瓷的机械强度，降低烧结温度。     

反兴奋剂——奥林匹克永恒的课题

世界体坛兴奋剂泛滥成灾,玷污圣洁的奥林匹克运动。新的兴奋剂不断涌现,今IOC防不胜防。随着人类基因组计划的完成,人类遗传密码的破译,基因兴奋剂将很快产生,奥林匹克将面临极为棘手的课题,反兴奋剂斗争似乎永远无法停息。应当加大力度呼吁全世界人民提高对兴奋剂危害性的认识,杜绝研究、制造和使用兴奋剂。同时应当鼓励运动员人人从自我做起,拒绝使用兴奋剂,奥林匹克的圣火才能永放圣洁的光芒。