Surface characteristics and corrosion resistance of biodegradable magnesium alloy ZK60 modifi ed by Fe ion implantati on and deposition

The ZK60 magnesium alloy has been modified by Fe ion implantation and deposition with a metal vapor vacuum arc plasma source. The surface morphology, phase constituent and elemental distribution are determined by scanning electron microscopy, transmission electron microscopy, X-ray diffractometer and Auger electron spectroscopy. The results show that Fe thin film is deposited on ZK60 alloy and the corresponding thickness increases from 2.73 μm to 6.36 μm with increasing deposition time. A transition layer mainly composed of Mg, Fe and O elements is formed between Fe thin film and ZK60 substrate. The potentiodynamic polarization tests reveal that a high corrosion potential and a low corrosion current density are detected for the Fe deposited ZK60 alloy, indicating the improvement of corrosion resistance. The tensile deformation test indicates that the Fe deposited film on the ZK60 substrate can sustain 1% tensile strain without any cracks.     

大束流Co离子注入形成CoSi_2/Si Schottky结的特性

采用 Schottky结源漏结构是克服传统 MOSFET器件短沟效应的一种有效方法。不同于常规的固相反应形成硅化物的方法 ,该文利用金属蒸汽真空弧 (MEVVA)离子源进行强流金属离子注入合成了金属硅化物 Co Si2 ,并首次对其与 Si所形成的 Schottky结特性进行了研究。结果表明85 0℃退火 1m in后已形成 Co Si2 硅化物晶相 ,且结深易于控制。电流特性表明 p型衬底得到了较好的 Schottky结 ,势垒高度为 0 .4 8e V,理想因子为 1.0 9,而 n型衬底形成的Schottky结的理想因子偏大 ,需进一步改进工艺     

MEVVA注入法合成SiC／Si异质结构的椭偏光谱研究

利用ＭＥＶＶＡ离子源进行离子束合成，制备了Ｃ＾＋离子注入单晶Ｓｉ衬底的样品，并利用椭偏光谱法研究了退火和未退火两种情况。椭偏光谱测量波长范围为４００￣２０００ｎｍ。通过对所测量样品的椭偏光谱数据分析，可得到离子束合成ＳｉＣ／Ｓｉ异质结构的多层膜结构。椭偏光谱法的测量结果证实：退火样品形成了ＳｉＣ埋层，即使进行高温、长时间退火处理，该埋层ＳｉＣ仍难以得到ＳｉＣ体材料的光学常数。