热壁CVD法GaN微晶粒的制备

用热壁CVD法在Si（lll）衬底上生长GaA薄膜,用扫描电镜（SEM）观察发现在表面上有大量微晶粒,这些晶粒的直径在2-4μm之间。用扫描电镜（SEM）、选区电子衍射（SAED）、X射线衍射谱（XRD）、傅里叶红外透射谱（FTIR）、光致荧光谱（PL）对样品进行了结构、组分及发光特性分析。结果表明：这些微晶粒为GaN六方铅锌矿。     

GaN基二维八重准晶光子晶体制备与应用

针对半导体发光管（LED）器件普遍存在的出光效率低下的问题,首次采用聚焦离子束技术成功地在GaN基发光器件上制备了GaN二维八重准晶光子晶体（2D-8PQCs）结构。并将二维八重准晶光子晶体应用于电注入器件,当刻蚀孔径为600nm,空气填充因子为30％时,得到了表面出光效率高达2.5倍的增强。通过微区电致发光与发光图样的研究,证实二维八重准晶光子晶体结构抑制了导波模式的传播,将LED中导波模式耦合到辐射模式,从而起到改进表面出光的作用。上述结果为二维准晶光子晶体在GaN基发光器件中的应用提供了一种可能的途径。     

无磨料低温抛光中的振动分析及消除

针对无磨料低温抛光中冰盘会出现倾斜、引起加工过程的振动问题,对冰盘与工件盘的水平面内的相对运动进行了分析。对冰盘倾斜时,工件盘的纵向运动进行了建模,得到了冰盘与工件盘的偏心及冰盘的倾角越大,振动的幅值越大的影响规律,提出了抛光前对冰盘进行修整来消除振动的解决方案。通过对石英晶体的抛光实验,证实了这种方法的可行性,最终达到了粗糙度为0.53nm的超光滑表面。     

基于solidworks和VC 的抛光机器手运动仿真研究

设计了一种自由曲面抛光的关节型机器手,对其进行了运动学建模.利用几何法简化求逆解过程,并给出了显式的解析解.在Visual studio 2003中应用VC++和MFC编程,计算出空间轨迹的各关节角度.在Adams 2010中完成了机器手的三维实体建模,并运用样条插值的轨迹算法,完成了机器手实现三维空间轨迹的运动学仿真过程,验证了几何法求解和轨迹规划的正确性,以及方案的可行性.     

基于MOVPE和MBE法生成的GaN薄膜的反射、透射光谱测量

使用紫外-可见光分光光度计,研究用金属有机物气相外延(MOVPE)方法生成在蓝宝石衬底上的GaN薄膜的反射光谱、透射光谱以及用分子束外延(MBE)方法生成在碳化硅衬底上GaN薄膜的反射光谱,结果表明,所测的GaN薄膜和体材料的光学吸收边出现在364 nm附近,对应的禁带宽度为3.41 eV.在两种不同衬底上,薄膜的反射谱由于材料晶格常数和热膨胀系数的不同有所差别.     

Study of the Contact Force in Free-form Surfaces Compliant EDM Polishing by Robot

With an elastic negative pole being driven by ultra so nic vibration and being moved along the surface of work-piece compliantly by ro bot, a new kind of effective EDM, the compliant EDM, cuts the electrically condu ctive materials away and polishes work-piece of free-form surface. The study o f the contact force between the end of polishing tool and the surface of work-p iece is the key for the compliant EDM to study its cutting mechanism and to make better use of it. This paper makes a model for the cont...     

A review of GaN-based optoelectronic devices on silicon substrate

Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.     

基于硫代水杨酸基电解液的纯铜电化学机械抛光反应机理研究

随着国防和电子工业领域的发展,纯铜精密零件对表面粗糙度的要求随之提高.在硫代水杨酸(TSA)的络合作用下,电化学机械抛光(ECMP)可避免加工应力引起的变形并获得低表面粗糙度的纯铜表面,但由于TSA存在多个官能团,其与纯铜材料的反应机理难以阐明.通过对电位动态极化和ECMP试验,优化了工作电位,实现在2 V(饱和甘汞电...     

磁性复合流体的深孔抛光工艺试验研究

针对深孔零件光整加工技术的难题,提出了基于针式抛光头的磁性复合流体（MCF）深孔抛光的加工方法。首先利用COMSOL Multiphysics有限元软件建立不同的永磁铁磁场组合模型,根据仿真结果设计磁场分布均匀且强度较强的针式抛光头;再建立MCF深孔抛光的磁流场耦合模型,分析MCF的流动特性;以黄铜H62的深孔零件为加...     

Magnetic Electrochemical Finishing Machining

How to improve the finishing efficiency and surface roughness have been all along the objective of research in electrochemical polishing. However, the research activity, i.e. during electrochemical polishing, directly introduce the magnetic field to study how the magnetic field influences on the finishing efficiency, quality and the electrochemical process in the field of finishing machining technology, is insufficient. When introducing additional magnetic field in the traditional electrochemical pol...