超临界直接空冷机组凝结水精处理系统的选择

讨论了超临界直接空冷机组凝结水水质特点,阐述了设置凝结水精处理的必要性,通过对两个方案的比选,提出选择＂阳床＋混床＂方案的建议。     

GaN(110)表面原子及电子结构的第一性原理研究

用缀加平面波加局域轨道方法计算了立方GaN及其非极性 ( 1 1 0 )表面的原子结构和电子结构 ,得到的GaN晶格常数及体积弹性模量与实验值符合得很好 .用层晶超原胞模型计算立方GaN ( 1 1 0 )表面的原子和电子结构 ,发现表面顶层原子发生键长收缩并旋转的弛豫特性 ,表面阳离子向体内移动 ,与周围阴离子形成sp2 杂化 ,而表面阴离子则形成p3 型锥形结构 .其面旋角为 1 4 .1°,比传统的Ⅲ V族半导体 ( 1 1 0 )表面面旋角 ( 30°± 2°)小得多 ,这主要与材料的离子性有关 .此外 ,在带隙附近还发现了两个表面态 ,一个是占据的表面态 ,主要是由N的p电子构成的 ;另一个是空态 ,主要由阳离子的轨道构成 .在驰豫后 ,这两个表面能带都移出带隙 ,分别进入导带和价带 ,形成共振表面态     

Research on Abrasives in the Chemical Mechanical Polishing Process for Silicon Nitride Balls

Silicon nitride (Si 3N 4) has been the main material for balls in ceramic ball bearings, for its lower density, high strength, high hardness, fine thermal stability and anticorrosive, and is widely used in various fields, such as high speed and high temperature areojet engines, precision machine tools and chemical engineer machines. Silicon nitride ceramics is a kind of brittle and hard material that is difficult to machining. In the traditional finishing process of silicon nitride balls, balls are lapped...     

Study of Compound Polishing Process on SnSb Alloy Moulds

The characteristic of metallographic structure of the SnSb alloy moulds is that hard particles are distributed on the soft metal matrix. Great difference of the hard particles and the soft metal matrix‘hardness makes moulds‘polishing become difficult. When a rigid grindstone is used to polish the surface of the SnSb alloy mould, the hard abrasives fall off and are embed in the soft matrix of SnSb alloy and while the process, the grinding chips are able to block the gap on the grindstone surface and enable t...     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate

GaN nanowires were successfully prepared on Si（111） substrate through ammoniating Ga203/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.     

Analysis on contact and flow features in CMP process

Chemical mechanical polishing/ planarization (CMP) has evolved into a key technology of integrated circuit (IC) industry to accomplish wafer surface polishing with high precision[1]. To a larger extent, however, CMP is still a black art, i.e. empirical or…     

自动抛光凸区域上自由曲面的扫描路径算法

为了减小抛光加工的表面粗糙度和提高效率,构建抛光工具路径并均匀覆盖于三维曲面上,曲面的定义域为任意二维凸区域。扩展扫描方式根据曲面一个方向上的一组切割曲线的标准长度分布,灵活调整相应位置穿越的扫描线数量,既包含一般的贯穿曲面的曲线,又包含起点或终点在曲面内的曲线,与传统扫描方式相比具有很大灵活性。为优化扫描方向和确定扫描线的端点,给出了曲面立体光固化(STL)模型的边界提取算法。通过一个曲面的扫描路径建构实例,详细阐述了任意二维凸区域上扩展扫描的算法流程,包括曲面分割、点列筛选和路径点的连接等步骤。路径长度和相邻扫描曲线的间距分布定量地表明扩展扫描方式可适应曲面形状变化并提高路径覆盖均匀度。     

脉冲激光沉积GaN薄膜

采用脉冲激光沉积技术,在Al2O3（0001）衬底上生长GaN薄膜,利用X射线衍射（XRD）、原子力显微镜（AFM）研究了不同沉积温度,不同沉积压强对所生长的GaN薄膜晶体结构特征的影响.研究表明,沉积温度影响GaN薄膜结构,在700～750℃沉积范围内随温度升高,所沉积生长的GaN薄膜具有良好的结晶质量.在5～10Pa沉积气压范围内,提高气压有利提高GaN薄膜的结晶质量.     

苎麻竹纤维功能性纺织面料研究

介绍了苎麻竹纤维的特点,用苎麻纱线与竹纤维纱线交织生产苎麻竹纤维织物,并对织物进行丝光、烧毛、低温等离子、生物酶抛光和防皱整理,研制的织物具有透气、挺刮、不贴身、抑菌、抗菌、易吸湿散湿、具有凉爽感和弹性感的特点,又增加了织物的悬垂感等布面光洁清晰,手感柔软,色泽鲜艳亮丽,具有丝绸般的风格.     

生长模式控制对MOCVD生长GaN性能的影响

采用MOCVD以Al2O3为衬底对GaN生长进行了研究．用X射线双晶衍射、电化学CV技术对GaN的结晶性能和电学性能进行了表征．研究表明，GaN的生长模式对其电学性能和结晶性能影响很大．在高温GaN生长初期，适当延长GaN的三维生长时间，能明显改善GaN薄膜的结晶性能，降低薄膜的缺陷密度和本底载流子浓度，使GaN质量明显提高．