Ⅲ—Ⅴ氮化物与蓝光LEDs(Ⅰ)

回顾了Ⅲ—Ⅴ氮化物材料和GaN-based蓝光LED的研究状况及近期的重大进展,分成两部分先后在本刊发表,首先简要地概述了GaN及其有关化合物的晶体生长技术,较为详细地讨论了衬底选择和外延层的晶体结构。     

GaN相变及热力学性质的理论研究

利用基于密度泛函理论的第一原理方法研究了GaN的纤锌矿、闪锌矿、氯化钠三种结构的结构性质以及高压下GaN的相变.利用焓相等原理得出GaN从闪锌矿结构到氯化钠结构的相变压强约为41.9GPa,与实验值和他人理论计算值相符合.通过准谐德拜模型得到了GaN的闪锌矿和氯化钠两种结构不同温度下热膨胀系数与压强的关系,不同温度下体积与压强的关系以及不同压强下热容与温度的关系.     

铒离子注入氮化镓的光学活性与缺陷掺杂变化

对100keV、1×1015cm-2的Er离子注入的GaN 退火样品的各项性质进行研究,采取光致发光(室温)、拉曼光谱和卢瑟福背散射对不同的退火样品的微观结构和光学性质进行研究.在退火样品中,均观测到了在1539nm 附近的PL峰.随着退火温度的升高,PL峰强在900℃时达到最大值.RBS结果显示随着温度的升高,Er离子不断扩散,且有部分在表面析出,导致在光学活性位置上的Er离子减少,使PL强度在更高温度下减弱.      

短波长半导体发光材料与器件的研究进展

叙述了GaN及ZnO发光材料与器件的研究进展,同时简单介绍了GaN发光器件的应用.     

良好结晶VO2(A)纳米杆的相变、电学和光转变特性

在VO2-草酸体系中,利用一步水热合成法制备结晶良好的VO2(A)纳米杆.成品的结构和尺寸分别通过X射线衍射(XRD)、扫描电镜(SEM)和透射电子显微镜(TEM)表征.差示扫描量热(DSC)曲线显示在加热过程中VO2的相转变温度为167.8 ℃.变温X射线衍射(XRD)图谱显示加热时VO2(A)在160~180 ℃发生相变.温度升高到450 K时,磁化率突然增加.使用4探针法测量VO2(A)样品的电阻率,滞后现象显示VO2(A)的相变为1级相变.根据阿仑尼乌斯曲线,得出低温VO2(AL)和高温VO2(AH)的活化能分别为0.39 eV和0.37 eV.变温红外光谱显示VO2(A)纳米杆在红外区域具有良好的光学转换特性,此特性与VO2(A)的可逆结构转变有关.研究结果表明VO2 (A)纳米材料可应用于红外开关装置.     

基于GaN器件的平衡式逆F类功率放大器的研究与设计

针对功率放大器效率低和输入输出端反射损耗较大的缺陷,采用平衡式结构研究了工作于2.6 GHz的逆F类功率放大器,并基于GaN器件CGH40010F设计该放大器验证电路。根据功放管输出寄生参数的等效网络,将负载阻抗转换到封装参考面上,在输出匹配电路中对二、三次谐波进行抑制处理。并且考虑栅源寄生电容对输入信号的影响,在输入拓扑结构中加入二次谐波抑制电路,进一步提高了放大器的效率。同时,在栅漏极偏置电路中,采用扇形微带线代替短路电容,使电路结构更为紧凑。经仿真优化,采用Rogers4350b板材制作该功放电路板。实测表明,饱和输出功率为42.32 dBm,最大漏极效率为77.91%,最大功率附加效率(power added efficiency, PAE)达到72.16%,输入输出驻波系数(voltage standing wave ratio, VSWR)均小于2。实测结果与仿真数据基本吻合,验证了设计方法的可行性。     

液相法制备铁钴合金纳米线/棒

报道了一种简单的液相还原法制备铁钴合金纳米线/棒.以十六烷基三甲基溴化铵(CTAB)为表面活性剂,在90℃时利用水合肼还原Fe2 和Co2 的水和正辛烷的混合溶液得到铁钴合金纳米线/棒.所得样品经X-射线粉末衍射(XRD) ,透射电子显微镜(TEM) ,选区电子衍射(SAED)和振动样品磁强计(VSM)等表征,结果表明延长反应时间,一维铁钴合金纳米结构直径增大但长度没有明显变化,一维铁钴合金纳米材料的室温矫顽力高于体相铁钴合金.该铁磁性纳米线/棒有望应用于催化、生物技术和磁记录器件等领域.     

GaN/GaN HEMT的微波功率器件研究

本文章系统的阐述了GaN/GaNHEMT的材料研究进展,比较国内外的最新科研成果,以蓝宝石为衬底的器件的研制为例进行分析,得出测量结果及器件特殊性能。     

Controlled growth of ZnO array on FTO glass substrate by electrodeposition

In this study, ZnO nanotube and nanorod array films were respectively synthesized directly on F-doped SnO2 glass substrate (FTO) using a direct electrodeposition from a simple aqueous zinc salt solution. The effects of potential value, electro-deposition mode and solution stirring speed on the product morphology were investigated. Controlling the reaction under poten-tiostatic condition of -0.7 V at stirring speed of 300 r/min, large-scale nanotube arrays perpendicular to the substrate can be synthesized at a low temperature of 70 ℃. By varying the reaction parameters, we can also obtain ZnO nanorod arrays. The results of X-ray diffraction, scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy have been provided to characterize the structure and morphology of the nanotube and nanorod arrays. Experiment results show that the as-obtained ZnO has a single crystalline structure and c-axis oriented direction. The room-temperature photolu-minescence spectrum of the ZnO nanotube array film displayed its high crystal property available as a photonic material. Electrodeposition is an effective method to prepare ZnO nanotube array films in quantity.     

Gallium-Catalyzed Silicon Oxide Nanowire Growth

Silicon oxide nanowires tend to assemble into various complex morphologies through a metalcatalyzed vapor-liquid-solid （VLS） growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer, SiO powder, or silane （Sill4） as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperatureand silicon source-dependent, they share similar structural and compositional features： all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.