简便合成椭球形二氧化硅包覆的金纳米棒

采用溶胶-凝胶法成功地制备出一种椭球形核-壳结构二氧化硅包覆的金纳米棒.分别采用透射电镜、扫描电镜、紫外、电子衍射和扫描电镜能谱对制备出的二氧化硅包覆的金纳米棒进行表征.结果表明二氧化硅包覆的金纳米棒呈椭球形,大小为60～80nm,壳层二氧化硅厚度约10～20nm.通过紫外检测发现,二氧化硅壳层对金纳米棒的光学特性几乎没有影响.试验结果表明,这种新颖的二氧化硅包覆的金纳米棒微球在生物医学(如治疗、传感器和分子影像等)中有着潜在的应用价值.     

Rod-shaped Au@PtCu nanostructures with enhanced peroxidase-like activity and their ELISA application

Pt and its based alloy nanoparticles （NPs） have been reported to demonstrate novel enzyme-like activities. Varying composition is very important to realize the opti- mization of their functions through the tuning of electronic structure. In this paper, our effort is focused in this direction by tailoring the electronic structure of Pt NPs via alloying with copper. Using gold nanorod （Au NR） as core, a simple method to prepare PtCu alloy shell is developed （termed as Au@PtCu NR）. The introduction of copper could result in endcap-preferred growth mode owing to the lattice mismatch between alloy shell and the Au core. The variation in the electronic structure changes the substrate affinity, and enhanced affinity was found for H202. Besides, the designed Au@PtCu nanostructures have realized spatial separation of catalytic and recognition sites. Binding of recognition antibodies had negligible effect on their catalytic activity. Based on their peroxidase- like activity, a highly sensitive detection of human immunoglobulin G （IgG） was demonstrated in a direct enzyme-linked immunosorbent assay （ELISA） mode. The detection limit can be as low as 90 pg/mL.     

A review of GaN-based optoelectronic devices on silicon substrate

Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.     

银纳米杆中原子能量分布特征的分子动力学研究

采用分子动力学方法和嵌入原子法（EAM）多体势函数,模拟研究了银纳米杆能量分布特征在不同温度直到熔化过程中的变化。结果显示：纳米杆中原子的势能分布曲线呈现多个分立的峰;随着温度的变化,分布曲线各个峰的位置保持不变,但峰高和峰宽明显变化;纳米杆熔化后这种能量分布特征完全消失,只有一个宽化的峰。模拟结果分析表明：纳米杆中原子势能分布曲线中每个峰对应于一定的最近邻原子数,纳米杆中每个原子的势能所处峰位由其最近邻原子数决定,偏离峰值程度则由其次近邻原子数决定。     

圆锥形图形化蓝宝石衬底对MOCVD生长GaN外延膜的位错密度和应力应变影响

通过金属氧化物化学气相沉积（MOCVD）方法在2．5μm×1．6μm×0．5μm圆锥形图形化蓝宝石衬底（CPSS）和没有图形化平面蓝宝石衬底（uss）上生长GaN外延膜．高分辨率X射线衍射仪（HRXRD）测试结果表明,生长在CPSS上GaN的刃位错的密度比生长在USS上GaN的刃位错密度低得多;从透射电子显微镜（TEM）观察,CPSS可有效地减小GaN外延膜中的线位错密度;拉曼散射谱显示通过CPSS可有效地减小GaN外延膜中的残余应力;比较两种外延膜中的光致发光谱（PL）,能从生长在CPSS上GaN外延膜中观察到强而尖的带边发射．以上结果表明：生长在CPSS上GaN外延膜的质量高于生长在USS上GaN外延膜的质量．     

低温水热制备ZnO纳米棒及其生长机理

以Zn(NO3)2·6H2O为前驱体,在碱性环境中,低温水热方法直接制备了ZnO纳米棒.应用场发射扫描电子显微镜(FESEM)、能谱仪(EDS)和X射线衍射仪(XRD)对样品进行了表征;通过光催化降解亚甲基蓝来评价ZnO的光催化活性;对60℃,1～24 h范围内不同水热样品,进行了形貌观察,分析了ZnO的形核过程.结果表明:ZnO为六边棱柱状纳米棒,晶型为纤锌矿结构;ZnO纳米棒的表观生长速率约为0.7μm/h,表观形核时间约为3 min;碱性条件是影响形核的重要因素;光催化活性随水热时间的增加而增强.     

氮化衬底对MOCVD生长GaN的影响

采用MOCVD生长技术以Al2O3为衬底对GaN生长进行了研究．用霍尔测量技术、光致发光技术以及光学显微镜测量了GaN的电学性能、光学性能以及表面形貌．研究表明,GaN低温缓冲层生长之前的氮化衬底工艺对GaN外延层表面形貌、发光性能、电学性能有显著影响．合适的氮化衬底条件可得到表面形貌、发光性能和电学性能均较好的GaN外延膜．研究表明长时间氮化衬底使GaN外延膜表面粗糙的原因可能是由于氮化衬底影响了后续高温GaN的生长模式,促使GaN三维生长所导致的．     

Gallium-Catalyzed Silicon Oxide Nanowire Growth

Silicon oxide nanowires tend to assemble into various complex morphologies through a metalcatalyzed vapor-liquid-solid （VLS） growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer, SiO powder, or silane （Sill4） as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperatureand silicon source-dependent, they share similar structural and compositional features： all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.     

理论模拟氧化锌纳米棒的表面复合速率

表面复合是严重影响纳米结构半导体发光性质及器件性能的重要因素之一.氧化锌(ZnO)因其具有优异的光电性质和物化稳定性在太阳能电池和发光二极管等光电器件领域展现出巨大的应用前景.本文利用MATLAB程序求解扩散方程,对化学水浴沉积法合成的ZnO纳米棒的表面复合速率进行理论模拟计算.与实验结果相结合,揭示表面复合对ZnO纳米棒发光性质的影响.     

含有p-GaN 纳米阵列的InGaN/GaN 双异质结太阳能电池的制作

提出了一种提高p-GaN/i-InGaN/n-GaN 双异质结太阳能电池外量子效率的方法,即将p-GaN 刻蚀成纳米阵列结构. 我们使用Ni 退火形成微结构掩模, 通过感应耦合等离子体(ICP)将p-GaN 刻蚀纳米阵列结构. 同时, 提出了两步刻蚀n-GaN 台面的制作工艺, 以此在形成p-GaN 纳米阵列结构时获得光滑的n-GaN 层表面, 以此改善后续金属电极的沉积. 经测试, 含有p-GaN纳米阵列结构的电池峰值外量子效率可达55%, 比常规p-GaN 膜层基InGaN/GaN 太阳能电池的外量子效率提高了10%.