ZnO纳米杆的生长和发光特性研究

用简单的真空热蒸发纯Zn粉工艺,在顺逆气流不同的情况下,直接在硅片上生长出比较定向的单晶ZnO纳米杆阵列.用扫描电子显微镜(SEM)、X-射线衍射(XRD)、选区电子衍射(SAED)、高分辨透射电镜(HRTEM)和室温光致发光谱(PL),研究了ZnO样品的结构、形貌和光学性质.结果表明:ZnO纳米杆为具有六方纤锌矿的单晶结构,纳米杆沿着[0001]的方向生长,顺气流时顶部为完整六边形,逆气流时顶部为六棱锥.这种顶部形貌的不同,是由于顺逆气流对应不同的锌蒸汽压而引起的.光致发光谱表明制备的ZnO纳米杆具有较好的绿光光学性能.     

制备GaN基材料的数值模拟研究进展

综述了紫外探测器的实际应用,特别介绍了紫外预警系统的作用原理;详细介绍了GaN基材料及其生长方法;对MOCVD法制备GaN基材料的过程做了详细描述,特别介绍了国内外MOCVD系统制备GaN基材料的数值模拟方法。     

Vertically aligned ZnO nanorods on porous silicon substrates: Effect of growth time

Vertically aligned ZnO nanorods were successfully grown on porous silicon(PS) substrates by chemical bath deposition at a low temperature.X-ray diffraction, field-emission scanning electron microscopy(FESEM), transmission electron microscopy(TEM), and photoluminescence(PL)analyses were carried out to investigate the effect of growth duration(2 h to 8 h) on the optical and structural properties of the aligned ZnO nanorods. Strong and sharp ZnO(0 0 2) peaks of the ZnO nanorods proved that the aligned ZnO nanorods were preferentially fabricated along the c-axis of the hexagonal wurtzite structure. FESEM images demonstrated that the Zn O nanorod arrays were well aligned along the c-axis and perpendicular to the PS substrates regardless of the growth duration. The TEM image showed that the top surfaces of the ZnO nanorods were round with a smooth curvature. PL spectra demonstrated that the ZnO nanorods grown for 5 h exhibited the sharpest and most intense PL peaks within the ultraviolet range among all samples.     

GaN LED量子阱光发射模型

在分析GaN LED量子阱结构对载流子限制和俘获的基础上,考虑量子限制Stark效应和Franz-Kddysh效应,提出了一种基于InGaN有源区的载流子复合及光发射模型.模拟结果表明LED的光发射效率和波长依赖于有源区In组分变化引起的势能涨落和阱尺寸,并得到LED发光波长红移的原因为：非故意掺杂引入新的施主能级和受主能级,新能级之间以小于带隙的能量跃迁;Franz-Keldysh效应随阱厚的增加而加强;压电极化和自发极化形成的内电场在空间上将电子和空穴隔开,但电子和空穴波函数的交叠允许它们在较低的能级上辐射复合;以及带边吸收的影响.     

Synthesis of trans-bis（glycinato） copper（Ⅱ） complex nanorods by room temperature solid-state reaction

Trans-[Cu(glyo)2(H2O)] nanoparticles with average diameters about 20-30 nm were prepared by onestep room temperature solid-state reaction. Trans-[Cu(glyo)2]nanorods with diameters ranging from 100 to 150 nm and lengths up to several μm were also prepared by one-step room temperature solid-state reaction in the presence of a suitable nonionic surfactant PEG400. The chemical composition and structural features of the products were investigated by elemental analyses, XRD, TG, SEM and TEM, respectively. The mechanisms of formation were also discussed.     

InxGa1-xN/GaN应变量子点中激子的结合能

利用有效质量方法和变分原理，考虑内建电场效应和量子点的三维约束效应，研究了InxGa1-xN／GaN应变量子点中的激子结合能随量子点结构参数和量子点中In含量x的变化规律．结果表明，随着量子点高度L和半径R的增加，结合能降低，随着量子点中In含量的增加，激子的结合能增大．对给定体积的量子点，激子结合能存在一最大值，此时电子、空穴被最有效的约束在量子点内．对不同体积的量子点，最大值的位置在量子点高度L=1．7nm附近取得.     

Fluorescent immunosensor based on fluorescence resonance energy transfer between CdSe/ZnS quantum dots and Au nanorods for PRRSV detection

An ultrasensitive and selective sandwich-type fluorescent immunosensor based on fluorescence resonance energy transfer (FRET) between CdSe/ZnS quantum dots (QDs) and Au nanorods (AuNRs) was developed for the rapid detection of porcine reproductive and respiratory syndrome virus (PRRSV). Modified CdSe/ZnS QDs and AuNRs were bioconjugated with primary antibodies M and GP5, respectively. When the target antigen was present, a well-known sandwich-type form CdSe/ZnS QDs-M antibody-antigen-GP5 antibody-AuNRs was produced, and thus reducing the distance between the QDs and NRs. As a result, FRET occurred and the fluorescence intensity of CdSe/ZnS QDs decreased, and this decrease was used to determine the antigen concentration. Ultrasensitive detection of PRRSV at low concentrations in swine serum was achieved with a limit of detection of 0.55 TCID₅₀/mL and a linear detection range of 10¹–3.5 ?× ?10⁴ TCID₅₀/mL. Therefore, the fluorescent immunosensor is selective and highly sensitive; specifically, it can detect PRRSV at low concentrations in swine serum over a large concentration range. This proposed detection method can facilitate the development of high-performance fluorescent immunosensors for the detection of PRRSV and other antigens.     

稀土Eu掺杂ZnO纳米棒的水热合成及其光学性质

采用水热法合成了稀土Eu掺杂ZnO纳米棒材料,研究了稀土Eu掺杂浓度对ZnO材料的结构、形貌和光学性能的影响。研究表明,Eu3+成功掺入到ZnO中,材料呈现纳米棒状结构且直径为15-25 nm。Eu的掺杂对ZnO材料的结晶质量和光学性能有明显的影响,随着Eu掺杂浓度的增加,ZnO材料的结晶质量明显下降,认为是杂质Eu的引入导致材料缺陷增加所致,而缺陷的改变引起ZnO材料的Eu3+红色特征发光峰增强。另外,随着Eu掺入到ZnO中,紫外峰峰位发生明显的红移现象,认为与引入新的Eu杂质能级有关。     

基于金纳米棒/多壁碳纳米管-壳聚糖复合膜电极的肌红蛋白直接电化学和电催化研究

采用金纳米棒(AuNRs)/多壁碳纳米管-壳聚糖(MWCNTs-Chit)复合膜促进肌红蛋白在电极上的直接电子转移,并用于构建H2O2生物传感器.首先将金纳米棒固定到玻碳电极表面,然后把MWCNTs-Chit分散溶液和肌红蛋白(Mb)固载到玻碳电极上,得到MWCNTs-Chit/Mb/AuNRs复合膜电极.通过循环伏安法对膜电极进行表征,在pH=7.0磷酸缓冲溶液中,Mb表现出一对峰形良好且可逆的氧化还原峰,其中氧化峰和还原峰电位分别为-0.291 V、-0.235 V,式电位(Eθ’)为-0.263 V.与此同时还探讨了修饰电极的电催化活性,结果表明其对H2O2具有良好的电催化还原作用,可作为检测H2O2的生物传感器.传感器对H2O2的米氏常数为0.0494 mM,线性范围为5.0×10-5～5.0×10-3M(R=0.986 7,n=10),检测限为3.2×10-6M(信噪比为3).     

复合材料BN-B2O3纳米棒的制备

采用六角氮化硼(h-BN)粉末为原料,通过对h-BN粉末球磨得到BN纳米粉,并在管式炉中对BN纳米粉进行烧结,烧结环境分别为真空和空气.利用X射线衍射(XRD)和透射电子显微镜(TEM)研究所得样品的结构和成分.结果表明,样品为结晶较好的BN-B2O3纳米棒复合材料.