时效对Cu-Cr-Zr合金显微硬度及导电率的影响

探讨了时效工艺及形变量对Cu 0 .3Cr 0 .15Zr合金显微硬度及导电率的影响。结果表明 ,合金经 92 0℃固溶处理后在 4 2 0℃及 4 6 0℃时效可分别达到较好的硬度和导电率 ,分别达 183HV和 6 8%IACS ;时效前对合金加以适当冷变形可加速合金时效析出过程。影响合金导电率的主要因素是基体中固溶元素的含量 ,含量越高 ,导电率越低 ,反之则越高。而时效前冷变形可以增加合金内部位错等缺陷的数量 ,加速了合金第二相的析出。     

脉冲电流对Cu-2.5Fe-0.03P-0.1Zn合金组织和性能的影响

采用微秒级高密度脉冲电流对CuFeP合金进行时效处理 ,试验研究了脉冲电流处理对合金显微组织及硬度的影响。结果表明 ,适当参数的电脉冲时效 ,可使Cu 2 .5Fe 0 .0 3P 0 .1Zn合金的析出相控制在细小的纳米尺度 ,在合金的电导率高于 6 0 %IACS的同时 ,显微硬度达到HV115 ,从而使二者实现较理想的配合     

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

Au/Zn O/n-Si(MIS)structures were fabricated by using the RF sputtering method and their complex dielectric constant(ε~*=ε’-jε’’),electric modulus(M~*=M′+j M’’)and electrical conductivity(σ=σ_(dc)+σ_(ac))values were investigated as a function of frequency(0.7 k Hz-1 MHz)and voltage(-6–(+6 V))by capacitance-voltage(C-V)and conductance-voltage(G/ω-V)measurements to get more information on the conduction mechanisms and formation of barrier height between Au and n-Si.The lnσ-Lnf plots have two different regions corresponding to low-intermediate and high frequencies.Such behavior of lnσ-lnf plots shows that the existence of two different conduction mechanisms(CMs)at low-intermediate and high frequencies.Moreover,the reverse bias saturation current(I_o),ideality factor(n),barrier height(Φ_(Bo))were determined from the forward bias I-V data and they were found as a strong function of temperature.The value of n especially at low temperature is considerably higher than unity.The values ofΦ_(B0)and standard deviation(σ_s)were found from the intercept and slope ofΦ_(Bo)-q/2k T plots as 0.551 e V and 0.075 V for the region I(80–220 K)and 1.126 e V and 0.053 V for the region II(220–400 K),respectively.The values ofΦ_(Bo)and effective Richardson constant(A~*)were found from slope and intercept of activation energy plots as 0.564 e V and 101.084 Acm~(-2)K~(-2)for the region I and 1.136 e V and41.87 Acm~(-2)K~(-2)for the region II,respectively.These results confirm that the current-voltage-temperature(I-V-T)characteristics of the fabricated Au/Zn O/n-Si SBDs can satisfactorily be explained on the basis of TE theory with double GD of the BHs.     

Optimizing the fabrication of carbon nanotube electrode for effective capacitive deionization via electrophoretic deposition strategy

In order to obtain superior electrode performances in capacitive deionization(CDI), the electrophoretic deposition(EPD) was introduced as a novel strategy for the fabrication of carbon nanotube(CNT) electrode.Preparation parameters, including the concentration of slurry components, deposition time and electric field intensity, were mainly investigated and optimized in terms of electrochemical characteristic and desalination performance of the deposited CNT electrode. The SEM image shows that the CNT material was deposited homogeneously on the current collector and a non-crack surface of the electrode was obtained. An optimal preparation condition of the deposited CNT electrode was obtained and specified as the Al(NO3)3 M concentration of 1.3 × 10~(-2) mol/L, the deposition time of 30 min and the electric field intensity of 15 V/cm. The obtained electrode performs an increasing specific mass capacitance of 33.36 F/g and specific adsorption capacity of 23.93 mg/g, which are 1.62 and 1.85 times those of the coated electrode respectively. The good performance of the deposited CNT electrode indicates the promising application of the EPD methodology in subsequent research and fabrication of the CDI electrodes for CDI process.     

电成像测井新参数在碳酸盐岩岩相识别中的应用

电成像测井识别碳酸盐岩岩相主要有定性图版法、定量参数法和机器学习法。图版法简单实用,但其效率低且受人工经验影响大,图像纹理参数种类过多且使用复杂,机器学习法需要大量样本标签,应用受到局限。为此,提出了一种简单又高效的新定量参数法,即通过新定量参数判别岩石构造特征来识别不同岩相。首先采用地质统计法对电成像测井动态图像进行全井眼插值,然后针对全井壁覆盖图像,利用数字图像处理技术获取二值图像,最后分别统计二值图像在纵向和横向黑色斑点(块)最大个数,并将二者的比值定义为视岩石构造数ARSN(aparent rock structure number)。ARSN可以有效区分块状和薄层状构造。据野外露头及岩心观察,一般颗粒云岩相为块状或厚层状和泥晶云岩相为薄层状或薄互层状构造特征。因此,利用ARSN可以区分颗粒云岩和泥晶云岩两大类岩相。以四川盆地M地区龙王庙组为例,经取心井验证,岩相识别符合率80%以上。该方法效率高且不受人的因素影响,实现高精度岩相识别,为该区碳酸盐岩沉积微相精细研究提供了有力技术支撑。     

加强实践环节的一个重要措施——关于开设《专业导论与初级实验》的体会

本文是阐述电气专业培养新入学学生了解专业、热爱专业、增强学好专业信心的一种教改尝试,通过首期教学实践,取得了予期的效果。文章介绍了这种改革的设想,具体的做法,以及几点体会,提供在教育改革中进行进一步的探讨。     

对汽车电子电器与控制系统课程实验教改的思考

在汽车电子电器与控制系统课程（下简称为汽车电子电器）的教学过程中，结合实验教学中所存在的问题，介绍了对研究性实验教学改革中所做的一些探索，阐述了下一步教改的方向与内容。     

高压喷嘴打击力测试系统研制

针对高压喷嘴性能特性,分析了测试的主要参数及方法,研制了一套高压除磷喷嘴性能测试系统。上位PC机与下位单片微机协同工作能够完成高压除磷喷嘴的流量-压力、打击力特性测试。具有模块化、实用性、技术易推广性、低成本等特点。 关键词：高压喷嘴,测试,水压系统,电气系统     

Relaxation mechanism analysis of synthetic fused quartz glass investigated by electrical impedance spectra

The synthetic fused quartz glasses with bare metal impurities have been analyzed by temperature- dependent electrical impedance spectroscopy. The complex electric impedance and the overlapping of the normalized dielectric modulus imply the single mechanism of dielectric and conduction relaxation in the fused quartz glass. Besides, the dependence of conductivity on temperature may attribute to the predominant electric relaxation to the delocalized or long range electronic hopping between the nonbridged dangling oxygen.     

Electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implantation was carried out for the multiple energies.A slight degradation of c-BN crystallinity resulted from ion implantation can be recovered by thermal annealing,keeping the cubic phase content as high as 92%.The resistance reduces from 1010X for the as-deposited c-BN film to 108X after an S implantation of 5 9 1014ions cm-2and annealing at 1,173 K,suggesting an electrical doping effect of S dopant.The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature,indicating semiconductor characteristics.The activation energy of S dopant is estimated to be 0.28±0.01 eV from the temperature dependence of resistance.