极化电压与铁电场效应晶体管漏极电流的稳定性关系

设计了具有金属/铁电体/半导体结构的铁电场效应晶体管（FFET）,并对其特性进行了仿真.结果表明,当Vg=0时,Pr和Ps/Pr的值决定了漏极电流的大小.当Pr增加时,Id随之增大.当FFET饱和极化后,Ps/Pr值增加,Id增大.FFET可以在特定极化电压（Vp=1.5 V）极化后,实现漏极电流的稳定输出,减小了Ps/Pr变化对FFET器件性能的影响.该漏极电流稳定输出时的极化电压值受到矫顽场Ec的影响,且Vp随Ec的减小而降低.     

X、Ku波段宽带低噪声放大器的设计

文章利用有损匹配的方法设计了一种覆盖X、Ku波段的宽带低噪声放大器,其工作频率为8～18 GHz,带内功率增益大于32 dB,增益平坦度小于3 dB,输入输出端口的回波损耗S11和S22均优于-7 dB,噪声系数小于2.8 dB,最大输出功率为16 dBm,且具有工作频带宽、输入输出匹配结构简单的特点.     

低能量氩离子束轰击改善双极型晶体管的噪声特性

在完成超高频小功率晶体管的芯片和上部铝电极的制备工艺后，采用低能量氩离子束轰击芯片背面，能有效地降低其高频及低频噪声系数、提高其特征频率和电流放大系数。实验结果表明，晶体管低频噪声系数的下降与硅-二氧化硅界面的界面态密度的减小有关，而其高频噪声系数的下降是特征频率和电流放大系数增加的结果。     

Preparation and characteristics of flexible all-organic thin-film field-effect transistor

Much attention has been attracted to organic thin-film field-effect transistors (OTFFETs) in the past decades[1—4]. Because of their lower cost and easier preparation, OTFFETs are considered to be useful in driving liquid crystal displays (LCD) and organic light-emitting diodes (OLED). Furthermore, flexible OTFFETs will be one of the most useful electronic devices for flexible active matrix driving circuits. OTFFETs based on pentacene single crystal have been reported to be of g…     

Preparation of organic thin-film field effect transistor

The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as di-electric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50 μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layerwere prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10ˉ6 cm2/(V@s), and the on/off current ratio reached 500.     

功率晶体管背面金属化研究

本文对比研究了磁控溅财、化学镀镍和蒸发等不同方法制备的背面金属化层对功率晶体管性能的影响。结果表明，采用磁控溅射方法制备的银系多层金属电极能显著降低功率晶体管的热阻，减小饱和压降和改善在电流特性。特别是，间隙工作寿命试验超过38000次以上，达到高可靠质量要求。文中还研究了金属化层制备中芯片背面状况对晶体管性能的影响。     

基于压控单元的单电子晶体管宏模型

在对纳米遂穿结(SETJ)及单电子晶体管(SET)的特性进行分析的基础上,笔者采用等效电路的方法,提出了基于压控单元的SET宏模型,仿真得到单电子晶体管的特性曲线.通过器件仿真的输出特性曲线与理想特性曲线的对比,得出曲线的走势与理想曲线基本一致,偏差不大.并且通过计算表明,数值的精度在合理范围内,验证了模型的合理性.     

用于TFT-LCD驱动的高效率高性能电荷泵设计

设计了一种用于TFT-LCD驱动的高效率高性能电荷泵.在分析了宽输入恒输出电荷泵原理的基础上,采用跟踪输入电压动态调整升压倍率的方法,克服了传统固定倍率电荷泵的效率随输入电压升高而大幅降低的缺点.提出了简单多倍率开关阵列及控制电路,采用了改进的三管复合开关减小静态功耗.电路用0.6μm BiCMOS工艺实现.测试表明:在输入电压2.7~5.5 V,工作频率250 kHz条件下,输出电压为5 V,满载电流为25 mA,平均效率提高了14%,最低效率提高了15%,静态电流为0.1 mA,负载调整率为0.014%mA-1.     

Discussion on the relationship between ΔVEB and IE presented in thermal resistance standard IEC60747-7 Version 2000

This paper points out an error in the principle figure and the waveform figure of the thermal resistance standard IEC747-7, which describes the relation between the I-V curves and the temperature. It theoretically proves that the I-V-T curve of the standard contradicts the physical law. This contradiction is also revealed by experimental results. Finally, the correct I-V-T characteristic curve and the waveform figure at two different temperatures for the same transistor is given, which serves as the reference to correct the standard.     

晶体管二次击穿特性研究

主要从器件的结构与制造角度,详细地讨论了与抗烧毁有关的大功率开关晶体管的二次击穿及其改善措施,并介绍了一种新型的大功率晶体管结构,对投片生产具有实际的指导意义．