掺杂钨丝中钾泡形成的动力学研究

本文利用透射和扫描电镜研究了掺杂钨丝退火时钾泡形成的机理和动力学,探讨了用微扰动理论处理钾泡形成过程的可能性。结果表明,冷拨掺杂钨丝中钾管分裂的必要条件是钾管长宽比≥9,在考虑钾泡形成热力学条件后,可导出几个有意义的钾泡分布参数,并发现对于同一丝径的掺杂钨丝,在同一温度退火,形成粗细不同的钾管,比较细的钾管分裂受表面扩散所控制,反之则主要受外部体扩散所控制,与实验结果相符。     

掺Er^3＋／Yb^3＋氟铝玻璃非辐射跃迁的研究

测量了掺Ｅｒ＾３＋／Ｙｂ＾３＋氟铝玻璃的吸收谱，在０．９８μｍ附近，比掺Ｅｒ＾３＋氟铝玻璃具有明显的吸收增强。用Ｊｕｄｄ－Ｏｆｅｌｔ理论得出了其光谱参量Ωλ（λ＝２，４，６），并计算了有关能级的声子跃迁速率。     

掺杂C60的聚乙烯基咔唑光导光膜的光电子能谱

采用Ｘ－射线光电子能谱表面分析技术并通过变温手段研究了聚乙烯基咔唑（ＰＶＫ）与Ｃ６０的作用形态，结果表明，ＰＶＫ与Ｃ６０可以形成电荷转移络合物，并且它的形成和解离随着温度的变化是可逆的。ＰＶＫ与Ｃ６０的电荷转移络合物的形成可能是改善ＰＶＫ光电性能的关键所在。     

Structure and electrical characteristics of Nb-doped SrTiO3 substrates

Strontium titanate (SrTiO3) has been widely used as substrates for growing perovskite oxides thin films be- cause SrTiO3 is chemically and compositionally stable, and has small lattice mismatch with many perovskite oxides[1―3]. It is known that SrTiO3 it…     

L^p（Ω）（1〈p〈∞）空间Co半群的谱特征

本文给出用(入—A)~-1的性质表示的L~p(Ω)(1相似文献   

配位聚合物[Co2(C3H4N2)4(C10H2O8)]n的晶体结构、磁性及光-电性能

采用溶液热合成方法, 得到了新颖的Co(Ⅱ)配位聚合物单晶体. 它是以[Co₂(C₃H₄N₂)₄(C₁₀H₂O₈)]为重复单元、用均苯四甲酸根为桥而联成的一维无限链状聚合物. 该配合物单晶属三斜晶系, 空间群P 1, ( — ) a = 0.9610(1) nm, b = 0.9684(1) nm, c = 0.7924(1) nm, α = 96.695(9)°, β = 102.741(6)°, γ = 116.551(5)°, V = 0.6236(2) nm³, Z = 2, R₁ = 0.0342, wR² = 0.0990. 表面光电压光谱测试结果表明, 它在300~800 nm范围内, 表现出了较明显的光伏响应带. 另外从该化合物的变温磁化率研究结果可以看出, 该聚合物具有弱的反铁磁物质行为.     

Sm3+掺杂碱锌硼硅酸盐玻璃的稳定性

为了实现纳米半导体微晶在稀土Sm^3 掺杂碱锌硼硅酸盐基础玻璃中的受控成核、生长,系统研究了基础玻璃的SiO2与B2O3摩尔比以及BaO、ZnO、La2O3、Y2O3、Nb2O5等不同的网络中间体对玻璃稳定性的影响。研究表明：控制SiO2与B2O3摩尔比以及BaO、La2O3、Y2O3、Nb2O5在玻璃中的掺入量均能提高玻璃的形成能力,增加玻璃的稳定性;不同的组分对于玻璃稳定性的改善也具有不同的机制,但是并不影响玻璃的析晶产物。     

Undoped semi-insulating indium phosphide (InP) and its applications

During the past several years, the research and development of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 μm. At present, InP has become an important semiconductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher frequency operation and lower power requirements. Therefore, InP is widely being used for the manufacture of microwave devices, high-frequency devices and optoelectronic integrated circuits (OEICs) which are indispensable for wireless technology, satellite communications^[1—3]. Although n-type and p-type InP can meet actual needs, semi-insulating InP substrates remain to be improved due to their poor uniformity and consistency. For this reason, several possible approaches have been reported to the preparation of SI InP by wafer annealing under different conditions^[4—9].     

[CrMo_6O_(24)H_6]~(3-)掺杂聚苯胺材料的制备及荧光性质

在盐酸介质中,以(NH4)2S2O8为氧化剂,杂多阴离子[CrMo6O24H6]3-为掺杂剂合成出了聚苯胺掺杂材料,用FT-IR,XRD进行了表征,测定了该材料的电导率、常见溶剂中的溶解度及其荧光性质.该材料的电导率为1.4×10-2S·cm-1,最高溶解度可达到0.60mg·mL-1,在以260nm和332nm为激发波长,可分别在425nm和567nm处得到荧光发射峰。     

纳米FePt薄膜材料的研究进展

Ll_0FePt（001）薄膜由于具有较高的磁各向异性和较高的矫顽力在磁记录介质材料方面具有潜在的应用前景,本文从衬底选择、元素掺杂和制备工艺三个方面介绍了FePt薄膜的研究近况。