PIN型a-Si太阳电池中的结电场分布、耗尽区宽度和最佳i层厚度的设计与计算

本文用自恰法严格计算了pin器件中的pi和in分离势垒区中电荷密度分布ρ(x)、电场分布ε(x)及耗尽区宽度W,然后缩小i层厚度使之部分重迭,再用电场迭加厚理算出耗尽区中的电场分布,在此基础上根据全收集条件δ_(gmin)=μ_fτ_pε_(min)算出最佳i层厚度X_e,发现当i层的费米能E_f向E_i靠近和gmin下降时,引起W和X_c显著增大     

甲硅烷常压CVD淀积非晶硅研究

本文讨论了以甲硅烷为源,用常压CVD法(APCVD)制备非晶硅的设备改进及工艺优化,提供了一些实验结果.文中着重分析了CVD过程,讨论了在较低温度下获得高淀积速率的原因.     

PECVD多晶硅膜的计算机模拟

在LPCVD理论模型基础上,通过引进“电子温度”,对 PECVD多晶硅膜进行了计算机模拟分析.结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳.实验结果与理论分析相吻合.     

Interfacial behavior of Fe76Si9B10P5/Zn0.5Ni0.5Fe2O4 amorphous soft magnetic composite during spark plasma sintering process

Fe_(76)Si_9B_(10)P_5/Zn_(0.5)Ni_(0.5)Fe_2O_4 amorphous composite with micro-cellular structure and high electrical resistivity was prepared by spark plasma sintering(SPS) at 487 °C. XRD and SEM results showed that the Fe_(76)Si_9B_(10)P_5 alloy powders remained the amorphous state and the composite was dense. A fusion zone at interface of Fe_(76)Si_9B_(10)P_5 cell body and Zn_(0.5)Ni_(0.5)Fe_2O_4 cell wall was observed by TEM, which also indicates the formation of local high temperature. The interface bonding based on the formation of local high temperature in SPS process was observed. It is believed that the tip effect of Zn_(0.5)Ni_(0.5)Fe_2O_4 nanoparticles promotes the local discharging and plasmas creation in the gaps, and the discharging energy forms an instantaneous local high temperature to complete the local sintering and the densification of Zn_(0.5)Ni_(0.5)Fe_2O_4 particles at a low nominal sinter temperature. Simultaneously, the local high temperature stimulates the adjacent gaps discharging, thus facilitate the continuous formation of new discharging path. Finally, sintering and densification of the amorphous composite is complete.     

半导体量子流体力学稳态方程的一个性质

研究半导体量子流体力学稳态模型方程的边值问题,在一定条件下证明了解的非负性和上界估计。     

非晶硅薄膜的制备及晶化研究

采用磁控溅射技术首先在玻璃基片、单晶硅片上溅射非晶硅薄膜再在其表面溅射铝膜,并用快速退火炉在不同温度下进行退火。利用台阶仪、拉曼散射光谱(Raman)仪和X射线衍射(XRD)仪对薄膜进行性能表征。结果表明:在功率120W,气压1.5～2.5pa,时间为3.5～4.5h的条件下可制备得非晶硅薄膜,Al诱导能降低晶化温度,并在500～600℃间存在一最佳晶化温度。     

自旋电子学功能材料进展

巨磁电阻效应的发现开拓了磁电子学的新学科,20世纪90年代,磁电子学得到迅速的发展,并在应用上取得显著的经济效益与巨大的社会效应,本世纪初,研究的重点已转移到半导体自旋电子学的新方向,并已取得重要的进展。本文将结合我们科研组的研究工作,概述从磁电子学到半导体自旋电子学材料的发展,重点介绍稀磁半导体材料研究的进展。     

Sulfurized hematite for photo-Fenton catalysis

A hematite/amorphous sulfur composite was prepared via simple heating hematite and α-sulfur in Teflon-lined autoclave at low temperature. The composite was characterized by X-ray diffraction(XRD), Raman spectrum,Thermal Gravity Analysis(TGA), Transmission Electron Microscopy(TEM) and X-ray photoelectron spectroscopy(XPS). The results revealed that an allotrope sulfur at 5-37% weight percent was found in the composite.After sulfuration, S_n~(2-) or S_2~(2-) was doped in the lattice of hematite, large amounts of OH and SO_4 were adsorbed on the surface of hematite. Hematite/amorphous sulfur composite had superior photo-Fenton activities than pure hematite. This work also demonstrated that amorphous sulfur also had the activity of photo-Fenton catalysis. OH~-and SO_4 radicals facilitated dye adsorption and acted as a bridge to link H_2 O_2. Moreover, SO_4 radicals on hematite served as electron trapping center that can receive photo-induced electron from conduction band of hematite and transfer it to the adsorbed H_2 O_2, increasing the rate of photo-Fenton reaction eventually.     

Structural and dielectric study of nano-crystalline single phase Sn1−xNixS (xNi=0–10%) showing room temperature ferromagnetism

SnS is a promising Ⅳ-Ⅵ semiconductor,which is very less explored for diluted magnetic semiconducting and dielectric applications.In this study,the Ni doping(x_(Ni)=0-10mol%) effects on SnS host lattice were investigated.A simple and low cost co-precipitation technique was employed to grow Ni doped SnS powders.The X-ray diffraction confirmed single phase orthorhombic structure with a nano-crystalline nature that was further verified through the surface structure observed by scanning electron microscopy.Near edge x-ray absorption fine structure spectroscopy revealed a shift in the Ni absorption edge towards higher energy,depicting the formation of Ni~(+3) oxidation state.The impedance measurements,in the frequency range 1 kHz to 20 MHz,depict that owing to the excellent sensitivity to the electromagnetic radiations at the low energy,the Ni doped SnS finds potential applications in various energy related devices.Vibrating sample magnetometer measurements have elucidated room temperature ferromagnetism,which depicts potential memory device applications.