Ag-聚酯复合薄膜的微结构与光学性能研究

用匀胶机在载玻片上甩制5%的硅酸乙酯薄膜,在该薄膜上用磁控溅射法溅射Ag制备半连续的纳米微粒Ag薄膜,经过不同温度下的退火,处于膜表面的Ag颗粒的扩散运动增强,从而得以渗入高分子聚酯层形成Ag-聚酯复合薄膜.采用X射线衍射和紫外-可见光谱等检测手段对其微结构和光学性能进行测试与分析发现:随着退火温度的增加,Ag晶粒的晶化现象越来越明显,平均晶粒尺寸和晶格常数均呈增大趋势.随着Ag质量分数的增加,Ag的XRD衍射峰出现并逐渐增强,Ag纳米颗粒表面等离子体共振吸收峰位置逐渐红移并逐渐增强.     

氧浓度对磁控溅射Ti/WO3 薄膜光学性能的影响

在不同氧浓度下,采用直流反应磁控溅射技术在玻璃基片上制备了Ti掺杂的WO3 薄膜并在450 ℃退火.用X射线衍射(XRD)、分光光度计、台阶仪等对薄膜的结构和光学性质进行表征,分析了不同氧浓度对气敏薄膜的透光率、微结构及光学带隙的影响.结果表明,氧浓度增大,沉积速率越慢,膜厚度减小,薄膜的平均晶粒尺寸增大,晶面间距增大;透射率曲线随着氧浓度的增加逐渐向短波方向移动,表明薄膜的光学带隙宽度随氧浓度的增大而变大.     

真空喷射射流流场的Fluent模拟分析

为了对真空射流流场进行研究,应用Fluent软件并基于VOF(volume of fluid)方法、k-ε标准湍模型及PISO算法,对不同喷口直径及入射压力的直射式锥型流道喷嘴的射流流场速度和湍流运动分布进行了数值模拟分析.结果表明:1)入口压力相同,喷嘴直径越大,射流与周围介质间的速度梯度越大,可促进射流的扩散和液滴破碎后的尺寸均匀分布;2)喷嘴直径一定,入口压力在10~15 MPa内,射流湍流强度分布达到最佳状态,射流流场较好;3)如果不考虑材料的溶解性,相对于三氯甲烷和四氯化碳,丙酮作为溶剂时的液体喷射雾化效果较好,适于制备质量较好的高分子薄膜.     

不同缓冲层对Ni_(81)Fe_(19)薄膜性能影响和微结构分析

采用磁控溅射方法制备分别以Ta和NiFeCr为缓冲层的Ta(NiFeCr)/NiFe/Ta薄膜材料.对于相同厚度的NiFe薄膜,与传统材料Ta相比,用NiFeCr作缓冲层薄膜的各向异性磁电阻有显著的提高.X射线衍射结果表明,与Ta缓冲层相比NiFeCr缓冲层可以诱导更强的NiFe(111)织构.高分辨透射电子显微镜结果表明,NiFeCr缓冲层和NiFe层的晶格匹配非常好,NiFe沿着NiFeCr外延生长,以NiFeCr为缓冲层的NiFe薄膜具有良好的晶体结构.对薄膜进行热处理,以NiFeCr缓冲层为缓冲薄膜的各向异性磁电阻值在350℃以下基本保持不变,当退火温度超过350℃后,其值会明显下降.以NiFeCr缓冲层的薄膜在350℃以下退火具有良好的热稳定性.     

等厚干涉法测量薄膜厚度的两种方法

等厚干涉法测量薄膜厚度设备简易,操作方便,分析直观,在生产中有着广泛的应用.本文探讨了两种等厚干涉法测量薄膜厚度的原理与方法,利用预先形成的薄膜台阶产生空气或透明材料劈尖,单色光在劈尖上下两界面的反射光发生相干叠加产生干涉条纹,通过条纹相关参数的测量,获得薄膜的厚度.通过比较,空气劈尖法较之薄膜劈尖法操作更简易、准确,因而更实用.     

Cl-对镁-铝合金β相模型合金表面膜稳定性的影响

采用电化学阻抗测试技术(EIS)、Mott-Schottky方法对β相模型合金在Cl-溶液环境中形成的表面膜的稳定性和半导体特性进行研究.结果表明,Cl-浓度的增加,使β相表面膜形成和活化溶解的趋势均加剧,即表面膜的稳定性变差.原因在于Cl-浓度较低时,β相表面膜的半导体类型为P型,P型半导体膜是一种阳离子导体膜,Cl-很难通过迁移扩散的方式穿过表面膜.随着Cl-浓度的增大,β相表面膜的半导体类型转变为N型,N型半导体膜便于Cl-穿越膜层到达膜层底部,继续腐蚀金属并使表面膜发生破裂.     

Growth behavior of polycrystalline silicon thin films deposited by RTCVD on quartz substrates

Polycrystalline silicon (poly-Si) thin films were prepared on quartz substrates by rapid thermal chemical vapor deposition (RTCVD) system, and their structures were studied by XRD, SEM and TEM, respectively. XRD spectra exhibit a single strong (220) diffraction peak, which indicates that the poly-Si films are preferentially <110> oriented. Plane-view SEM images show that the surface of the poly-Si films is composed of large numbers of polygonal pyramid grains with different sizes, and cross-section SEM images further indicate that they are columnar grains with growth direction perpendicular to substrate surface. TEM observation results demonstrate that there are a lot of twin crystals including one-order, two-order and high-order (≥3) twin crystals in the poly-Si films. The above experimental results can not be elucidated by the conventional opinion on growth behavior of poly-Si films prepared by atmosphere pressure chemical vapor deposition (APCVD), but can be explained by the Ino’s multiply twinned particles (MTPs) model found in the face centered cubic metal films. According to the above experimental results and Ino’s model, we tend to think that nucleation and grain growth of poly-Si films deposited by RTCVD on quartz substrates are based on the formation of MTPs, and then these MTPs form the continuous films in an island growth mode.     

Effect of Mg content on the structural and optical properties of Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>O alloys

Mgx Zn1–x O thin films with x = 0, 0.11, 0.28, 0.44, 0.51, and 0.65 were grown by plasma-assisted molecular beam epitaxy on (0001) sapphire substrates. X-ray diffraction measurement reveals that phase separation of the Mgx Zn1–x O films occurred at x =0.44 and 0.51. Optical absorption spectra show that the absorption edges of the films shift to high-energy side with increasing Mg contents. In resonant Raman spectra, multiple-order Raman peaks originating from ZnO-like longitudinal optical phonons were obser...     

聚合物覆膜对长周期光栅灵敏度的调制

利用静电自组装技术在长周期光栅表面组装了聚丙烯胺盐酸盐(PAH)/聚苯乙烯磺酸钠(PSS)薄膜,并探索了覆膜的长周期光栅对异丙醇、乙醇、甲醇、水、空气的响应性能。实验表明,聚合物薄膜的厚度或组装层数对长周期光栅的灵敏性产生了调制,使长周期光栅对折射率呈如下的敏感规律:随着组装层数的增加,长周期光栅对折射率的敏感性逐渐从高折射率向低折射率转移;并且长周期光栅对折射率相邻的介质有一个最佳敏感区。这对开发高灵敏性和高选择性的长周期光栅生化传感器提供了很好的依据。     

Photo-induced optical changes in GexAs40Se60-x thin films

Ge-As-Se chalcogenide thin films show a wide range of photosensitivity, which is utilized for the fabrication of micro-optical elements for integrated optics. The photosensitivity of GexAs40Se60?x(x=0,15) chalcogenide thin films for UV light was presented. For that purpose, the bulk samples of GexAs40Se60?x(x=0,15) chalcogenide glasses were prepared using conventional melt quenching technique, and thin films were prepared using thermal evaporation technique. These thin films were exposed to UV light for two hours. Amorphous natures of bulk samples and thin films were verified by XRD and chemical compositions were verified by EDX measurements. The thicknesses of the thin films were measured using a thickness profilometer. Linear optical analysis of these thin films was done using transmission spectra in wavelength range of 300?900 nm. Optical bandgap was determined by first peak of transmission derivative as well as extrapol ation of Tauc’s plot. R2 analysis was done using R software to ensure that the material is indirect bandgap material. It is observed that two hours UV exposure causes photo-darkening along with photo-expansion in As40Se60 thin films, while photo-bleach ing and photo-densification for Ge15As40Se45 thin films. However, the amounts of photo-induced optical changes for Ge15As40Se45 thin films are smaller than those for As40Se60 thin films. The changes in optical absorption, bandgap and thickness are understood base d on the bonding rearrangement caused by UV exposure.