Sn-8Zn-3Bi无铅钎料的抗氧化性

为了提高Sn-8Zn-3Bi合金钎料的抗氧化性,在Sn-8Zn-3Bi合金基础上,通过加入少量的其他合金元素(A1,P)以提高钎料的抗氧化性.少量A1的加入降低了Sn-8Zn-3Bi钎料的氧化量,而加入P的Sn-8Zn-3Bi钎料在加热过程中不仅没有质量增加,反而出现减重现象.通过扫描电镜和X射线衍射等分析手段研究样品的表面微观结构和显微组织,探讨了A1,P的抗氧化机理.分析结果表明:A1通过在合金表面形成一层致密的氧化膜,阻止钎料直接接触周围空气,从而达到了降低氧化速率的目的;P通过自身不断被氧化而消耗钎料表面的O原子,从而保护元素Sn和Zn不被氧化.     

拉格朗日系统的奇性周期解

利用直接变分法，证明了一类具有双偶的次二次或有界位势的拉格朗日系统的奇性周期解的存在性。     

反映周公制礼的两首《国风》

周公制礼实际上是一场婚姻制度的变革.<诗经·召南·甘棠>、<行露>两篇(<国风>)反映了召公巡于南国,推行新的婚姻制度的上古情实.     

一类双分数Brownian运动的广义二次协变差

假设B是一个指数为H∈(0,1),K∈(,1]且满足2HK＜1的双分数Brownian运动,其赋权局部时设为{(b)(x,t),t≥0,x∈R}.建立了f(B)与B的广义二次协变差f(B),B](W),并且研究如下局部时的积分∫Rf(x)(b)(dx,t), t≥0,这里x|→f(x)为Borel可测函数.构造了一个B...     

Effect of high pressure sintering and annealing on microstructure and thermoelectric properties of nanocrystalline Bi2Te2.7Se0.3 doped with Gd

Bi2Te2.7Se0.3of high performance doped with Gd bulk materials was prepared by a high pressure(6.0 GPa) sintering(HPS) method at 593 K,633 K, 673 K and 693 K. The sample was then annealed for 36 h in a vacuum at 633 K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298 K to 473 K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423 K for the sample, which was sintered at 673 K and then annealed at 633 K for 36 h. Compared with the zone melting sample, it was increased by 85% at423 K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.     

Influence of Ga-doping on the thermoelectric properties of Bi(2−x)GaxTe2.7Se0.3 alloy

Bi(2-x)GaxTe2.7Se0.3(x=0, 0.04, 0.08, 0.12) alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the electrical and thermal transport properties were investigated in the temperature range of 300–500 K. The power factor values of the Ga-doped samples are obviously improved in the temperature range of 300–440 K. Among all the samples, the Bi(2-x)GaxTe2.7Se0.3(x=0.04) sample showed the lowest thermal conductivity near room temperature and the maximum ZT value reached 0.82 at 400 K.     

Bi3TiNbO9压电陶瓷制备工艺研究

以Bi3TiNbO9和TiO2为原料,采用固相法合成Bi3TiNbO9（BTN）压电陶瓷．用X线衍射仪和电子显微镜等对陶瓷样品进行分析．实验结果表明,采用固相法可在较低烧结温度下制备出单相的BTN陶瓷．探讨不同工艺参数对BTN压电陶瓷的压电、介电性能的影响．实验发现,较高的成型压强可以制得致密且均匀的BTN陶瓷．再结晶可以使晶粒生长均匀,且能够承受较高的极化场强．在8kV／mm场强下极化的BTN陶瓷的压电常数d33为5．6pC／N．     

《周髀算经》光程极限数值来由新探

<周髀算经>中光程极限167000里这一概念和数值在整个<周髀算经>宇宙体系中占有重要的地位.唐如川和陈文熙认为日出和日落时分,太阳离周城的距离就是光程极限,但在具体推算上还存在一些问题.如果考虑<周髀算经>中春秋分与实际春秋分的时间差(<周髀算经>中的春秋分按照四分法计算得来),以及由于地球轨道近日点的变化(1.7度/世纪)所导致的春秋分时间的变动,则可得到比较精确的结果,从而使这一数据的来由得到比较合理的说明.     

Bi1/2Na1/2TiO3-BaTiO3系无铅压电陶瓷制备工艺的优化及其结构分析

借助正交试验设计，通过对无铅压电陶瓷压电、介电性能的测试，研究了BaTiO3含量、预烧温度、烧结温度及保温时间对（1-x）（Bi1／2Na1／2）TiO3-xBaTiO3（简写为BNBT-100x）陶瓷性能的影响。研究结果表明制备BNBT系陶瓷的最优化工艺条件为：BaTiO3摩尔分数x=0．06、预烧温度850℃、烧结温度1130℃、保温时间2h。通过XRD分析了BNBT系压电陶瓷的晶体结构类型、晶胞参数及晶格畸变随着BaTiO3摩尔分数的变化，确定了该体系的三方-四方的准同型相界在x=0．06～0.08之间。     

一个陶瓷制品的仿真CAD系统

本文介绍一实用的陶瓷产品造型系统。该系统采用双轨迹法设计形状各异的陶瓷产品;利用在小平面上的线性插补来提高造型速度;通过映射关系施加平面图案。此外,该系统还提供了造型素材的建立、平面图案的生成方法、图案快速压缩存取、制品工艺图纸输出手段,以及一个易懂易学、便于操作的界面。该系统已经在陶瓷行业中使用。