不同对称性条件下光子晶体局域态的演化

光子晶体不仅可以用来调控自发辐射,还可以用来控制光的传输和局域.研究采用平面波展开法进行模拟计算.首先改变光子晶体H1缺陷及其附近介质柱的半径,使得光子晶格缺陷处超晶胞的旋转对称性具有C6v,C3v或C2v等点群的性质;然后分析二维圆形介质柱三角光子晶体的局域态在光子禁带中演化.计算结果表明：随着介质柱的半径的变化,光子晶体局域态会发生变化,其演化表现出阶段性;同时随着对称性破缺程度的加深,会有更多缺陷态进入光子禁带.计算选择硅（Si）作为介质柱材料,主要为硅基光子晶体激光器的选模提供理论参考.     

硅片不同表面钝化工艺的稳定性研究

研究分析了热氧化钝化,用PECVD双面沉积SiNx:H膜钝化以及碘酒钝化三种表面钝化工艺的稳定性,通过WT-2000少子寿命测试仪对采用这三种钝化工艺的单晶硅片,多晶硅片以及物理提纯硅片在暗条件不同储存时间的少子寿命进行测量,分析得到三种表面钝化工艺的效果以及稳定性。研究结果表明:碘酒钝化效果好,用PECVD双面沉积SiNx:H膜钝化和热氧化钝化稳定性好。     

优质高稳定性微晶硅薄膜的制备

对以SiCl_4和H_2为源气体、采用等离子体增强化学气相沉积(PECVD)技术在低温快速沉积优质高稳定性的微晶硅薄膜进行了研究.在低于250℃下,成功制备出了沉积速率高达0.28nm/s、晶化度达80%以上的微晶硅薄膜.通过光照实验,表明该微晶硅薄膜光致电导率基本保持恒定;通过对气流分布进行调节,微晶硅薄膜的均匀性得到明显改善,均匀度高达95%.     

无取向硅钢夹杂物来源研究

为判断铸坯中夹杂物的主要来源,在无取向硅钢生产过程中,向钢包、中包覆盖剂及中包表面耐材中分别加入基体重量的10% BaCO3,10% SrCO3,10% La2 O3(质量分数)作为示踪剂,并在相关工序取钢样或渣样,利用扫描电镜和显微镜观察分析夹杂物的形貌和成分。研究表明,无取向硅钢中大型夹杂物主要为SiO2、Al2 O3以及硅铝酸盐,夹杂物的主要来源是保护渣卷入和二次氧化。     

Leaching of vanadium,sodium, and silicon from molten V-Ti-bearing slag obtained from low-grade vanadium-bearing titanomagnetite

The water leaching process of vanadium, sodium, and silicon from molten vanadium-titanium-bearing (V-Ti-bearing) slag obtained from low-grade vanadium-bearing titanomagnetite was investigated systematically. The results show that calcium titanate, sodium aluminosilicate, sodium oxide, silicon dioxide and sodium vanadate are the major components of the molten V-Ti-bearing slag. The experimental results indicate that the liquid-solid (L/S) mass ratio significantly affects the leaching process because of the respective solubilities and diffusion rates of the components. A total of 83.8% of vanadium, 72.8% of sodium, and 16.1% of silicon can be leached out via a triple counter-current leaching process under the optimal conditions of a particle size below 0.074 mm, a temperature of 90°C, a leaching time of 20 min, an L/S mass ratio of 4:1, and a stirring speed of 300 r/min. The kinetics of vanadium leaching is well described by an internal diffusion-controlled model and the apparent activation energy is 11.1 kJ/mol. The leaching mechanism of vanadium was also analyzed.     

Investigations of a nanostructured FeMnSi shape memory alloy produced via severe plastic deformation

Low-cost iron-based shape memory alloys (SMAs) show great potential for engineering applications. The developments of new processing techniques have recently enabled the production of nanocrystalline materials with improved properties. These developments have opened avenues for newer applications for SMAs. The influence of severe plastic deformation induced by the high-speed high-pressure torsion (HSHPT) process on the microstructural evolution of an Fe–Mn–Si–Cr alloy was investigated. Transmission electron microscopic analysis of the alloy revealed the existence of nanoscale grains with an abundance of stacking faults. The high density of dislocations characteristic of severe plastic deformation was not observed in this alloy. X-ray diffraction studies revealed the presence of ε-martensite with an HCP crystal structure and γ-phase with an FCC structure.     

基于ATT7022A的Y/Δ切换抽油机节能控制器的研制

Y/Δ转化器在低负载率时,节电效果较好。可控硅调压控制器在高负载率时,节电效果较好。采用高精度三相电能计量芯片ATT7022A,设计了一种结合两者优点的抽油机节能控制仪。对抽油机电动调压节能系统的软硬件设计做了较详细的分析。通过在多口油井上安装Y/Δ可控硅调压组合式抽油机节能控制仪,并对5口井进行了现场对比测试,单口井年节电约2.1万kW.h。     

以SiHCl3为工作介质生产高丰度28Si

为了获得高丰度的28S i同位素,生产高纯度的单晶硅,利用气体离心机对硅同位素进行离心分离。通过对S iH-C l3中组成元素的不同同位素丰度的分析,计算了天然S iH-C l3中不同相对分子质量的分子组成。分析结果表明:虽然氯有两种同位素,但也可以将S iHC l3作为分离28S i同位素的工作介质。通过4台离心级联的分离实验,得到了28S i丰度达到99%的S iHC l3样品。离心分离得到的高丰度S iHC l3不用经过化学转化就可以直接用于单晶硅的生产。实验结果表明,采用离心法分离S iHC l3可以得到高丰度28S i。     

车用大功率电力电子器件研究进展

 车用电机驱动变流器是电动汽车电机驱动的关键部件,大功率电力电子器件是其核心。对比分析了国内外电动车辆用电机驱动变流器的拓扑结构、变流器控制特点及体积功率密度等关键指标,指出车用电机驱动变流器的技术创新重点在于硅基绝缘栅双极性晶体管(IGBT)芯片及封装技术持续改进碳化硅(SiC)器件的应用。综述了硅基IGBT芯片的演进和IGBT模块封装技术的创新,介绍了碳化硅器件的技术特点。     

Dielectric properties of spark plasma sintered AlN/SiC composite ceramics

In this study, we have investigated how the dielectric loss tangent and permittivity of AlN ceramics are affected by factors such as powder mixing methods, milling time, sintering temperature, and the addition of a second conductive phase. All ceramic samples were prepared by spark plasma sintering (SPS) under a pressure of 30 MPa. AlN composite ceramics sintered with 30wt%–40wt% SiC at 1600℃ for 5 min exhibited the best dielectric loss tangent, which is greater than 0.3. In addition to AlN and β-SiC, the samples also contained 2H-SiC and Fe₅Si₃, as detected by X-ray difraction (XRD). The relative densities of the sintered ceramics were higher than 93%. Experimental results indicate that nano-SiC has a strong capability of absorbing electromagnetic waves. The dielectric constant and dielectric loss of AlN-SiC ceramics with the same content of SiC decreased as the frequency of electromagnetic waves increased from 1 kHz to 1 MHz.